Sony Corporation

Sony Semiconductor Solutions Corporation

Tetsuya Mizuguchi

Kazuhiro Ohba

Katsuhisa Aratani

Shuichiro Yasuda

Kazuhiro Bessho

Hiroshi Kano

Masayuki Shimuta

Tetsuya Yamamoto

Masanori Hosomi

Akira Kouchiyama

Yutaka Higo

Takeyuki Sone

Satoshi Sasaki

Mayumi Ogasawara

Akihiro Maesaka

Naomi Yamada

Koji Miyata

Hiroaki Sei

Motonari Honda

Keitaro Endo

Tomohito Tsushima

Minoru Ikarashi

Ichiro Fujiwara

Yoshihisa Kagawa

Kazuhiko Hayashi

Teiichi Miyauchi

Shinya Kubo

Hiroaki Narisawa

Hiroshi Kang

The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions.

Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same

A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.

Memory component, memory device, and method of operating memory device

A method of making memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.

Method of making memory element with ion source layer comprised of two or more unit IO source layers

A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer.

Memory element and memory device

There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less.

Memory element and memory device with ion source layer and resistance change layer

A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode.

Memory element and method of manufacturing the same, and memory device

A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side.

Memory element having ion source layers with different contents of a chalcogen element

A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.

Memory element with ion source layer and memory device

A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30&#x2266;Te&#x2266;100 atomic %, 0&#x2266;Al&#x2266;70 atomic %, and 0&#x2266;Cu+Zr&#x2266;36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se.

Provided are a memory element and a memory device. A memory layer is provided with an ion source layer. The ion source layer includes Zr (zirconium), Cu (copper), and Al (aluminum) as a metal element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogen element). The amount of Al in the ion source layer is 30 to 50 atomic percent. The amount of Zr is preferably 7.5 to 25 atomic percent, and more preferably, the composition ratio of Zr to the chalcogen element in total included in the ion source layer (=Zr (atomic percent)/chalcogen element in total (atomic percent)) falls within a range from 0.2 to 0.74.

There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 m&#x3a9;cm or higher but lower than 1 &#x3a9;cm.

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Kanagawa, Japan

Tetsuya Mizuguchi