Denso Corporation

Denso Corpora Tion

Tetsuya Matsuoka

Yuu Yamahira

Kazuma Fukushima

Hiroshi Shimizu

Mitsunori Kimura

Yasuyuki Ohkouchi

Kengo Mochiki

Ryota Tanabe

Kazuya Takeuchi

Noriyuki Kakimoto

Makoto Okamura

Hiromi Ichijo

Kosuke Kamiya

Masakiyo Sumitomo

Yuuichi Handa

Yasuaki Aoki

Hiroshi Inamura

Naoki Hirasawa

Akifumi Araragi

Masaya Tonomoto

Hiromi Ichijyo

Tatsuya Murakami

Hiroyoshi Sawada

Taijiro Momose

Toshiyuki Kouno

Yuuya Hashimoto

A power converter includes an inverter, a converter, an electrical-machine busbar, an electrical-machine sensor, an electrical-machine-sensor housing, a converter, a converter busbar, a converter-sensor housing. The inverter supplies a three-phase alternating current to a rotating electrical machine. The converter converts a voltage between a direct current power supply and the inverter. The electrical-machine busbar passes a current between the inverter and the rotating electrical machine. The electrical-machine sensor detects the current flowing through the electrical-machine busbar based on a magnetic field. The electrical-machine-sensor housing accommodates the electrical-machine sensor and the electrical-machine busbar together. The converter sensor detects the current flowing through the converter based on a magnetic field. The converter-sensor housing is disposed apart from the electrical-machine-sensor housing, and accommodates the converter sensor and the converter busbar together.

Power converter

In a power converter, electronic components constituting a power conversion circuit is provided. A capacitor module and a converter case are also provided in the power converter. Fastening members, which include a first fastening member and a second fastening member, are configured to fasten the capacitor module to the converter case. The first and second fastening members are mounted on the inner bottom surface of the converter case. At least one of the electronic components is mounted to the capacitor module and is arranged between the first fastening member and the second fastening member when viewed in a view direction perpendicular to an alignment direction of the first and second fastening members. The view direction is parallel to the inner bottom surface of the converter case.

Capacitor device

A power converter includes: at least one pair of first and second semiconductor devices including multiple first and second semiconductor chips, having first and second switching elements providing upper and lower arms, and multiple first and second main terminals having at least one of multiple first and second high potential terminals and multiple first and second low potential terminals; and a bridging member providing an upper and lower coupling portion, together with the first low and second high potential terminals. The first and second semiconductor chips are arranged in line symmetry with respect to first and second axes and in line symmetry with the second axis as a symmetry axis to differentiate the arrangement of the second low potential terminal with respect to the second high potential terminal from the arrangement of the first low potential terminal with respect to the first high potential terminal.

Power converter with an upper arm and a lower arm and at least first and second semiconductor devices connected by a bridging member

A power conversion apparatus has a positive electrode bus bar and a negative electrode bus bar. The power conversion apparatus has a first semiconductor module incorporating an upper-arm switching element and including a positive electrode terminal and a second semiconductor module incorporating a lower-arm switching element and including a negative electrode terminal. The first semiconductor module and the second semiconductor module are placed such that the positive electrode terminal and the negative electrode terminal face each other in a direction orthogonal to a protruding direction. The positive electrode bus bar and the negative electrode bus bar respectively have coexisting parts placed together between the positive electrode terminal and the negative electrode terminal as seen in the protruding direction of power terminals. The coexisting parts are at least partially placed in a space between the positive electrode terminal and the negative electrode terminal.

Power conversion apparatus

A power conversion device provided with a switching circuit unit including a plurality of upper-arm switching elements connected to positive electrode wiring and a plurality of lower-arm switching elements connected to negative electrode wiring. The power conversion device includes a first semiconductor module incorporating a plurality of the upper-arm switching elements connected together in parallel, a second semiconductor module incorporating a plurality of the lower-arm switching elements connected together in parallel, and a third semiconductor module incorporating the upper-arm switching elements connected together in series and the lower-arm switching elements connected together in series.

Power conversion device including a plurality of semiconductor modules

In a power conversion device, each of semiconductor modules of a layered body includes a body portion incorporating a plurality of switching elements and a plurality of power terminals protruding therefrom. The semiconductor modules include upper-arm switching elements and lower-arm switching element that are alternately layered in a layering direction of the layered body. A capacitor is disposed on one side of the layered body and a current sensor is disposed on an opposite side of the layered body, in an orthogonal direction orthogonal to both a protruding direction of the power terminals and the layering direction. Each of the semiconductor modules includes, as the power terminals, two collector terminals connected to a collector electrode of the switching element and one emitter terminal connected to an emitter electrode of the switching element, and the emitter terminal is disposed between the two collector terminals in the orthogonal direction.

Power conversion device

The semiconductor device is provided with a plurality of switching elements connected in parallel to each other, and a plurality of recirculation element connected in parallel to the aforementioned plurality of switching elements. An emitter electrode serves as a reference potential of the aforementioned plurality of switching elements and an anode electrode serves as a reference potential of the aforementioned plurality of recirculation elements are electrically connected by the same plate-like member consisting of a conductive material. The aforementioned switching elements and the aforementioned recirculation elements which are connected in parallel on the lowest potential side are constituted so that the distance from the emitter terminal connected to the aforementioned emitter electrode to the aforementioned recirculation element becomes no greater than the distance from the aforementioned emitter terminal.

Semiconductor device having switching element suppressing potential variation

In a power converter, a control circuit has a speed adjustment resistor that limits a control current to adjust a switching speed of each of first and second switching elements. The speed adjustment resistor has a resistance that varies depending on a voltage at the control electrode of each of the first and second switching elements. A feedback route connects between the control electrode of the first switching element and the control electrode of the second switching element. The feedback route has a resistance that is set to be lower than a value of the resistance of the speed adjustment resistor during a predetermined Miller period of each of the first and second switching elements.

Power converter with switching elements, control circuit having speed adjustment resistor, and feedback route

A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.

A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.

A power conversion apparatus includes a capacitor and a heat dissipation member for cooling the capacitor. The capacitor and the heat dissipation member are pressed in an arranging direction in which the capacitor and the heat dissipation member are arranged. The capacitor includes a capacitor element which includes a dielectric body and a metal layer formed on a surface of the dielectric body, an electrode part connected to the metal layer and a bus bar connected to the electrode part. Part of the bus bar is interposed in the arranging direction between the heat dissipation member and the capacitor element.

A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.

Semiconductor module and electric power conversion apparatus

In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.

Driving apparatus for switches

A power conversion apparatus includes a first semiconductor element pair that includes a MOSFET made of wide bandgap semiconductor material and a wide bandgap diode made of wide bandgap semiconductor material which is reverse parallel-connected to the MOSFET, a second semiconductor element pair that includes an IGBT made of silicon semiconductor material and a silicon diode made of silicon semiconductor material which is reverse parallel-connected to the IGBT, and a control circuit section for controlling switching operation of the MOSFET and the IGBT. The first and second semiconductor element pairs are connected in series to each other.

An electric power converter performing power conversion includes a plurality of semiconductor modules with built-in semiconductor elements, a plurality of cooling tubes stacked together with the plurality of semiconductor modules, and a pressure member made of metal. The pressure member has a pressing surface for pressing an outer cooling tube in order to press-contact the plurality of cooling tubes and the plurality of semiconductor modules in a stacking direction, and a heat receiving surface that receives heat generated from a capacitor that is an electronic component which is different from the plurality of semiconductor modules, by thermal conduction.

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Kariya, Japan

Tetsuya Matsuoka