Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Kokusai Electric Co., Ltd.

Tetsuya Marubayashi

Yasuhiro Inokuchi

Kouji Tometsuka

Mitsuhiro Hirano

Kiyoaki Yamada

Atsushi Moriya

Kosuke Takagi

Satoru Murata

Atsushi Hirano

Satoshi Aizawa

Haruo Morikawa

Iwao Nakamura

End effector for handling wafers

A substrate processing apparatus includes a reaction tube defining a substrate processing chamber; a gas inlet provided at a lower portion of the reaction tube to supply a process gas; a first buffer unit for temporarily retaining the process gas, the first buffer unit at a first side of an inner surface of the reaction tube and includes a plurality of gas supply holes; and a gas outlet provided at a second side of the inner surface of the reaction tube opposite to the first side, to exhaust the process gas from the process chamber. The gas supply holes are provided from an upper end portion of the first buffer unit to a lower end portion of the first buffer unit, and the process gas is supplied through the plurality of gas supply holes into the process chamber, passes through the process chamber, and exhausted through the gas outlet.

Reaction tube structure and substrate processing apparatus

Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.

Method of manufacturing semiconductor device and substrate processing apparatus

Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube, a substrate holder, a gas nozzle, a heating unit, a temperature detector, and an exhaust unit. The reaction tube accommodates and processes substrates. The substrate holder holds substrates stacked at predetermined intervals in the reaction tube. The gas nozzle is installed along a stacked direction of the substrates. The heating unit heats the substrates. The temperature detector is installed along the stacked direction of the substrates. The exhaust unit exhausts an inside atmosphere of the reaction tube. Each of the gas nozzle and the temperature detector includes first and second parts and is supported by a narrow tube supporting member including first and second supporting parts. The first supporting part makes contact with the first part. The second supporting part is parallel with the second part and supports the second part.

Substrate processing apparatus

A substrate processing apparatus comprises a semiconductor wafer processing chamber, a wafer transfer device, a wafer cassette holding unit, a wafer cassette transfer device and a wafer cassette bringing in/out section disposed in this order and a housing. The wafer cassette holding unit is movable between a wafer processing time position and a maintenance time position thereof and the wafer cassette transfer device is movable between a wafer processing time position and a maintenance time position thereof. The wafer cassette bringing in/out section is capable of rotating forward of the housing, whereby the front face of said housing is opened. With the wafer cassette holding unit being positioned at the maintenance time position thereof, the wafer cassette transfer device being positioned at the maintenance time position thereof and the wafer cassette bringing in/out section being rotated forward of the housing to open the front face thereof, maintenance of the wafer transfer device can be performed from the front face of the housing.

Substrate processing apparatus and maintenance method therefor

Growing community of inventors

Toyama, Japan

Tetsuya Marubayashi