Nec Electronics Corporation

Tetsuya Kurokawa

Takashi Ishigami

Koji Arita

Tatsuya Usami

Akira Furuya

Noriaki Oda

Makoto Sekine

Kazuyoshi Ueno

Manabu Iguchi

Ryuji Tomita

Kaori Noda

An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

Semiconductor device and method for manufacturing same

A semiconductor device having interconnects is reduced in leakage current between the interconnects and improved in the TDDB characteristic. It includes an insulating interlayer, and interconnectsfilled in grooves formed in the insulating interlayer, including a copper layermainly composed of copper, having the thickness smaller than the depth of the grooves, and a low-expansion metal layer, which is a metal layer having a heat expansion coefficient smaller than that of the copper layer, formed on the copper layer.

Semiconductor device and method of fabricating the same

The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu filmis formed in multilayer films comprising a L-Ox&#x2122; filmand a SiOfilm. Since the L-Ox&#x2122; filmcomprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.

Semiconductor device including ladder-shaped siloxane hydride and method for manufacturing same

A semiconductor device has a first guard ring surrounding a circuit region, a second ring disposed between the circuit region and the first guard ring, and first connections connecting the first guard ring and the second guard ring to each other. An area sandwiched between the first guard ring and the second guard ring is divided by the first connections into a plurality of subareas. Even if the first guard ring is partly defective, water enters from outside into only the subarea which is contiguous to the defective part of the first guard ring.

Semiconductor device with guard ring for preventing water from entering circuit region from outside

Growing community of inventors

Kanagawa, Japan

Tetsuya Kurokawa