Sumitomo Electric Industries, Limited

Sony Corporation

Other

Tetsuya Kumano

Yohei Enya

Takashi Kyono

Hiromi Nakanishi

Takao Nakamura

Hiroshi Nakajima

Katsunori Yanashima

Takatoshi Ikegami

Hideyuki Ijiri

Kunihiko Tasai

Kuniaki Ishihara

Masaki Ueno

Noriyuki Futagawa

A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from &#x3c;011&#x3e; direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.

Surface emitting laser and method of manufacturing the same

An optical module includes a semiconductor laser and a linear polarizer that is disposed in an emission direction of the semiconductor laser and that is configured to transmit, of light emitted by the semiconductor laser, only light containing a linearly polarized light component in a specific direction.

Optical module

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

Optical module and method for manufacturing the optical module

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more thannm. The package has an internal moisture content of not more thanppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of InAlGaN, where x&#x3e;0 and y&#x3e;0, the second cladding layer being made of InAlGaN, where0&#x2266;x&#x2266;about 0.02 and about 0.03&#x2266;y&#x2266;about 0.07.

Semiconductor device

A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.

Growing community of inventors

Itami, Japan

Tetsuya Kumano