Fujitsu Corporation

Tetsuya Kochi

Satoshi Ueda

Tetsuo Saito

Tamotsu Yamamoto

Hiroshi Takigawa

Junjiro Goto

Kazuo Ozaki

Kosaku Yamamoto

Tohru Maekawa

A method for growing an epitaxial layer of a group II-VI tenary or quaternary compound on a substrate. In particular a HgCdTe semiconductor layer is grown on a substrate such as sapphire which does not interdiffuse with the materials in the semiconductor layer. Initially a crystalline CdTe semiconductor layer is formed on the substrate and then the substrate with the CdTe layer thereon is placed into an enclosure along with a Hg-Cd-Te source that is rich in Te. The substrate and the source are then heated so as to establish three-phase equilibrium conditions in the enclosure whereby vapors from the source are transported to the CdTe layer and the latter is converted into a ternary semiconductor compound having the composition Hg.sub.1-x Cd.sub.x Te. The substrate with the Hg.sub.1-x Cd.sub.x Te epitaxial layer thereon is useful as a sensing device.

Method for growing a HgCdTe epitaxial layer on a semiconductor substrate

An infrared radiation (IR) detector includes a cold shield consisting of (a) a light shielding portion having a substrate made of an infrared transmissive material, an infrared absorbing layer formed on one surface of the substrate, a dielectric layer formed on the infrared absorbing layer and an infrared reflecting layer formed on the dielectric layer, and (b) an opening portion consisting of a substrate made of an infrared transmissive material and a dielectric layer formed on the one surface of the substrate. The substrate and the dielectric layer are connected and generally continuous between the light shielding portion and the opening portion. The IR detector also includes an infrared detector array having a detective area arranged just below the opening portion of the cold shield.

Infrared detector

Growing community of inventors

Isehara, Japan

Tetsuya Kochi