Kyocera Corporation

Tetsuya Kishino

Motoki Ito

Tsuyoshi Nakai

Masahisa Shimozono

Soichiro Nozoe

Naofumi Kasamatsu

Takeshi Okamura

Tsuneo Mishima

Tatsuya Doumoto

Hongnian Li

Masaki Nanbu

Hiroyuki Tanaka

Nobuki Hiramatsu

Kenji Yamamoto

Takanori Ikuta

Kyohei Kobayashi

Hideharu Kurioka

Junya Nishii

Michiaki Nishimura

Djuniadi Arifin Sagala

Daisuke Yamamoto

Yukihiko Yashima

Kazuhiro Kusabe

Yuriko Nishimura

Masaya Kawaguchi

Akinori Satoh

Kenji Taki

A splitter simultaneously inputs two signals having different frequencies within a transmission band to a transmission terminal. A transmission filter system and a reception filter system that are connected to an antenna terminal share a first hybrid coupler. Two transmission filters and a second hybrid coupler are located between the first hybrid coupler and the transmission terminal. A reception filter is located between the first hybrid coupler and the reception terminal.

Composite filter and communication device

The strength of a spurious signal is reduced while maintaining the uniformity of a resonant frequency in an identical elastic wave resonator. An elastic wave resonator () includes a piezoelectric body (), and a plurality of electrode fingers () located on the piezoelectric body and arranged in a propagation direction (TD) of an elastic wave. A region in which the plurality of electrode fingers are located includes a first region (A) and a second region (B) in a plan view. The plurality of electrode fingers include a first electrode finger group (A) located in the first region and a second electrode finger group (B) located in the second region, and a pitch (PA) of the first electrode finger group is different from a pitch (PB) of the second electrode finger group. The first region and the second region have frequency effective-characteristics acting in a direction to cancel out effects on a higher resonant or antiresonant frequency and a lower resonant or antiresonant frequency brought about by a magnitude correlation between the pitches of the first and second electrode finger groups.

Elastic wave resonator, elastic wave filter, demultiplexer, and communication apparatus

An acoustic wave elementaccording to the present disclosure includes a piezoelectric substrateand an IDT electrodeon the piezoelectric substrate. The IDT electrodeincludes a multilayer structure of a first layercomprised of Al containing 10% or less of a sub-component and a second layercomprised of a CuAlalloy. The second layerenables the acoustic wave elementto have excellent electric power resistance.

Acoustic wave element, filter element, and communication apparatus

An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer which is located on the multilayer film and is configured by a single crystal of LiTaO, and an IDT electrode on the LT layer. In the multilayer film, a differential value obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer is negative, and a thickness of the LT layer is less than p and a thickness of the multilayer film is less than p where a pitch of electrode fingers in the IDT electrode is 'p'.

Acoustic wave device, multiplexer, and communication apparatus

An acoustic wave element includes an IDT electrode including electrode fingers, a first substrate on an upper surface of which the IDT electrode is located, which has a thickness of less than 2 times a repetition interval of the electrode fingers and is configured by a piezoelectric crystal, a second substrate bonded to a lower surface of the first substrate, and configured by an Si single crystal having a plane orientation of a (100) plane or (110) plane or a plane equal to them, in which substrate a crystal axis of the Si single crystal parallel to a substrate surface of Si single crystal is inclined at any angle of 25&#xb0; to 65&#xb0;, 115&#xb0; to 155&#xb0;, 205&#xb0; to 245&#xb0;, and 295&#xb0; to 345&#xb0; relative to a direction of propagation of an acoustic wave when viewed from the upper surface of the superposed first substrate.

Acoustic wave element

An acoustic wave element includes an IDT electrode including a plurality of electrode fingers and exciting a surface acoustic wave, a first substrate including an upper surface on which the IDT electrode is located, the first substrate being configured by a piezoelectric crystal, and a second substrate bonded to a side where a lower surface of the first substrate is located. Either of a first region which continues from the lower surface of the first substrate toward a side where the upper surface is located or a second region which continues from the lower surface of the first substrate toward a side where the second substrate is located is a low resistance region having a resistance value of 5&#xd7;10&#x3a9; to 5&#xd7;10&#x3a9;.

An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer configured by a single crystal of LiTaOon the multilayer film, and an IDT electrode on the LT layer. The thickness of the LT layer is 0.3&#x3bb; or less where &#x3bb; is two times a pitch p of electrode fingers in the IDT electrode. Euler angles of the LT layer are (0&#xb0;&#xb1;20&#xb0;, &#x2212;5&#xb0; to 65&#xb0;, 0&#xb0;&#xb1;10&#xb0;), (&#x2212;120&#xb0;&#xb1;20&#xb0;, &#x2212;5&#xb0; to 65&#xb0;, 0&#xb0;&#xb1;10&#xb0;), or (120&#xb0;&#xb1;20&#xb0;, &#x2212;5&#xb0; to 65&#xb0;, 0&#xb0;&#xb1;10&#xb0;). The multilayer film configured by alternately stacking at least one first layer and at least one second layer. The first layer is comprised of SiO. The second layer is comprised of any one of TaO, HfO, ZrO, TiO, and MgO.

An acoustic wave device includes a substrate, a multilayer filmon the substrate, an LT layerwhich is located on the multilayer film and is configured by a single crystal of LiTaO, and an IDT electrodeon the LT layer. In the multilayer film, a differential value D obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layerfrom a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layeris negative, and a thickness of the LT layeris less than 2p where a pitch of electrode fingers in the IDT electrodeis 'p'.

A composite substrateincludes a first substratecomprised of a piezoelectric single crystal and a second substratecomprised of a silicon single crystal bonded to the first substrate. In the second substrate, a planar orientation is (111), and &#x3c8; of Euler angles (&#x3c6;, &#x3b8;, &#x3c8;) is offset from 0&#xb0;. Due to this, a bulk wave spurious is reduced in a specific frequency band.

Composite substrate and acoustic wave element using same

An acoustic wave element includes an IDT electrode includes pluralities of electrode fingers, and reflector electrodes on the two sides of the IDT electrode. The IDT electrode includes a major part and at least one end part which is located between the major part and one of the reflector electrodes and is arranged along a direction of propagation of an acoustic wave together with the major part. the at least one end part includes a pitch of the plurality of electrode fingers substantially the same as a pitch of the plurality of electrode fingers in the major part, is electrically connected in parallel with respect to the major part, and is divided into two or more sections which are electrically connected in series with each other.

Acoustic wave element and communication apparatus

In an IDT electrode of an acoustic wave element which includes first electrode fingers and second electrode fingers connected to potentials which are different from each other and arranged spaced apart from each other, the first electrode fingers includes first tip parts, and either of the first electrode fingers and the second electrode fingers includes, at a tip area extending along a direction of propagation of an acoustic wave and overlapping with the first tip parts, increase sections in which electrode volumes per unit lengths in a direction of extension of the first electrode fingers and the second electrode fingers are larger in comparison with that of the center area in which the electrode fingers intersect.

The acoustic wave element of the present invention includes a multi-mode type filter and a capacitance part. The multi-mode type filter includes a substrate comprised of a piezoelectric crystal; a first IDT to which a signal is input and a second IDT which is adjacent to this, each IDT including a first comb-shaped electrode and a second comb-shaped electrode which is connected to a reference potential, each comb-shaped electrode being located on the upper surface of the substrate and including a plurality of electrode fingers. The capacitance part is located on the upper surface of the substrate and includes a first counter electrode which is electrically connected to the first IDT at the first comb-shaped electrode side, and a second counter electrode which is arranged at a distance from the first counter electrode and is connected to the reference potential.

Acoustic wave element, multi plexer, and communication module

An acoustic wave element of the present disclosures has a piezoelectric substrate and an acoustic wave resonator on a main surface of the piezoelectric substrate. The acoustic wave resonator is one being divided into a first IDT electrode and a second IDT electrode which are electrically connected to the first IDT electrode. The first IDT electrode includes a first comb-shaped electrode on the signal input side and a second comb-shaped electrode on the signal output side. The second IDT electrode includes a third comb-shaped electrode on the signal input side and a fourth comb-shaped electrode on the signal output side. The direction of arrangement of the third comb-shaped electrode and the fourth comb-shaped electrode from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from the direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode.

Acoustic wave element, duplexer, and communication module

An SAW resonator includes a piezoelectric substrate, an IDT electrode, and a pair of reflectors. The IDT electrode includes pluralities of electrode fingers which are aligned on the piezoelectric substrate in a direction of propagation of a SAW. The pair of reflectors are located on the two sides of the pluralities of electrode fingers on the piezoelectric substrate in the direction of propagation. The IDT electrode includes a plurality of areas which includes pluralities of electrode fingers distributed to them and have different resonance frequencies from each other. The plurality of areas include at least three areas. The second highest resonance frequency among all areas is lower than an intermediate value between the lowest resonance frequency among all areas and the highest resonance frequency among all areas.

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Kyoto, Japan

Tetsuya Kishino