Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Tetsuya Kimura

Michio Kadota

Yutaka Kishimoto

Sho Nagatomo

Takashi Yamane

Masashi Omura

Katsumi Fujimoto

Katsuya Daimon

Shinsuke Ikeuchi

Fumiya Kurokawa

Mari Yaoi

Hideki Iwamoto

Kenjiro Okaguchi

Koji Fujimoto

Minefumi Ouchi

Kazunori Inoue

Takuya Koyanagi

Naohiro Nodake

Kenji Nishiyama

Takeshi Nakao

Syunsuke Kido

Ville Kaajakari

Shuji Tanaka

Mari Saji

Shinya Yamamoto

Shou Nagatomo

Yasuyuki Ida

Takashi Ogami

Toru Yabe

Ryoichi Morimoto

Hikari Tochishita

Yuzo Kishi

Yuta Ishii

Ivoyl P Koutsaroff

Kenya Hashimoto

Katsumi Suzuki

An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A, B, C, and D, defined as follows, are all outside the cavity when, at the points A, B, C, and D, xa>about 25 μm, ya>about 25 μm, xb>about 25 μm, yb>about 25 μm, xc>about 25 μm, yc>about 25 μm, xd>about 25 μm, and yd>about 25 μm.

Acoustic wave device

An acoustic wave device includes a support, a piezoelectric layer, an IDT electrode including first and second busbars and first and second electrode fingers, and a dielectric film provided on the piezoelectric layer so as to overlap at least a portion of the IDT electrode in plan view. When a thickness of the piezoelectric layer is d and a center-to-center distance between centers of adjacent ones of the electrode fingers is p, d/p is less than or equal to about 0.5. A cavity that opens on a side of the piezoelectric layer is provided in the support. The IDT electrode includes an intersection region, and first and second gap regions. The dielectric film is provided at at least a portion of the first and second gap regions, and a thermal conductivity of the dielectric film is higher than a thermal conductivity of the piezoelectric layer.

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction intersecting a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave in a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. At least a portion of each of the first and second electrodes is embedded in the piezoelectric layer.

A filter device includes first and second acoustic wave resonators each including a support, a piezoelectric layer that has an X-axis, a Y-axis, and a Z-axis that are crystal axes and is made of Y-cut lithium niobate, and an IDT electrode including first and second electrode fingers. When a thickness of the piezoelectric layer is d and a center-to-center distance of the first and second electrode fingers and the second electrode fingers adjacent to each other is p, d/p is less than or equal to 0.5. An absolute value of a first slant angle α1 differs from an absolute value of a second slant angle α2.

Filter device

An acoustic wave device includes a support, a piezoelectric layer on the support, and an IDT electrode including first and second electrode fingers. When a thickness of the piezoelectric layer is d and a center-to-center distance of the first and second electrode fingers adjacent to each other is p, d/p is less than or equal to about 0.5. When an imaginary line connecting tips of the first electrode fingers is an envelope, a direction in which the envelope extends and the direction of the Y-axis intersect each other, and about 9°≤|α|≤about 14° is satisfied, where |α| is an absolute value of a slant angle α. The slant angle α is an angle of a corner defined by the direction in which the envelope extends and the direction of the Y-axis and is an angle other than 0°.

An acoustic wave device includes a support including a support substrate with a thickness in a first direction, a piezoelectric layer on the support in the first direction, and resonators each including a functional electrode on the piezoelectric layer in the first direction. The support includes first and second space portions at positions where the respective resonators at least partially overlap in plan view in the first direction, the second space portion with an area larger than an area of the first space portion in plan view in the first direction. The piezoelectric layer includes first and second through-holes respectively communicating with the first and second space portions, and the first through-hole has an area larger than an area of the second through-hole in plan view in the first direction.

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness slip first-order mode. The acoustic wave device includes first and second resonators. Each of the first and second resonators includes the first and second electrodes, and a setting portion including a setup region where the first and second electrodes are provided in the piezoelectric layer. The thickness of each of the first and second resonators excludes the thickness of the first and second electrodes included in the resonator. The thickness of the first resonator is different from the thickness of the second resonator.

An elastic wave device includes a piezoelectric film made of lithium niobate or lithium tantalate, and a first electrode finger and a second electrode finger opposing each other in a direction intersecting a thickness direction of the piezoelectric film. When an average thickness of the piezoelectric film is d and a distance between centers of the first electrode finger and the second electrode finger is p, d/p is about 0.5 or less. The first electrode finger and the second electrode finger are connected to the first and second bus bars, respectively. The first and second bus bars include corner portions. At least one of corner portions of the first and second bus bars is outside a cavity portion when viewed in plan view.

Elastic wave device and ladder filter

An acoustic wave device includes a piezoelectric layer that is made of lithium niobate or lithium tantalate, and a plurality of pairs of electrodes opposed to each other in a direction intersecting with a thickness direction of the piezoelectric layer, in which a bulk wave in a thickness shear primary mode is used or d/p is about 0.5 or lower when a thickness of the piezoelectric layer is d and a distance between centers of mutually adjacent electrodes among the plurality of pairs of electrodes is p. The plurality of pairs of electrodes include at least one pair of first electrodes of a first acoustic wave resonator and at least one pair of second electrodes of a second acoustic wave resonator. A direction orthogonal to a longitudinal direction of the second electrodes in the second acoustic wave resonator is inclined at an angle that is greater than 0° and smaller than 360° with respect to a direction orthogonal to a longitudinal direction of the first electrodes in the first acoustic wave resonator.

An acoustic wave device further includes a piezoelectric layer and first and second electrodes, first and second divided resonators, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer overlaps at least a portion of a first region of the piezoelectric layer. The second energy confinement layer overlaps at least a portion of a second region of the piezoelectric layer. The support substrate includes a wall portion between the first and second energy confinement layers.

An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness-shear primary mode. The material of the piezoelectric layer is lithium niobate or lithium tantalate. The first and second electrodes include aluminum layers, respectively, on the piezoelectric layer. An orientation direction of a crystal of each of the aluminum layers is a direction orthogonal or substantially orthogonal to a second principal surface on the piezoelectric layer side of each of the aluminum layers.

An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is over the support substrate. The IDT electrode is on the piezoelectric layer, and includes a plurality of electrode fingers. An intersecting width of the plurality of electrode fingers is equal to or smaller than about 5λ.

An acoustic wave device includes a piezoelectric layer, a first electrode, a second electrode, a first divided resonator, a second divided resonator, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer at least partially overlaps with a first region of the piezoelectric layer. The second energy confinement layer at least partially overlaps with a second region of the piezoelectric layer. The first and second energy confinement layers are integrally provided in the support substrate.

An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is directly or indirectly provided on the support substrate. The IDT electrode includes a plurality of electrode fingers and is provided on a main surface of the piezoelectric layer. The thickness of the piezoelectric layer is about 1λ or less when a wavelength of an acoustic wave determined by an electrode finger period of the IDT electrode is defined as λ. The support substrate is an A-plane sapphire substrate.

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Nagaokakyo, Japan

Tetsuya Kimura