V Technology Co., Ltd.

Tetsuya Kiguchi

Michinobu Mizumura

Makoto Hatanaka

Koichi Kajiyama

Yoshikatsu Yanagawa

Daisuke Ishii

Masami Takimoto

The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Thin film transistor, manufacturing process for thin film transistor, and laser annealing apparatus

A pulsed laser oscillator includes at least one first electrooptical element that polarizes light according to an applied voltage and a voltage control unit that applies a voltage to the first electrooptical element and controls the voltage. The voltage control unit changes over time a voltage value applied to the first electrooptical element, to control a pulse width of laser light.

Pulsed laser oscillator and method for controlling pulsed laser oscillation

Growing community of inventors

Yokohama, Japan

Tetsuya Kiguchi