Denso Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

Tetsuya Katoh

Takashi Aoki

Tomoki Tanemura

Itaru Ishii

Tatsuya Kamiya

Takashi Inoue

Junichi Takeya

Masayuki Katayama

Koji Noda

Hiroyuki Kishita

Mayumi Uno

Tomohiko Mori

Kazushige Kojima

Takashi Hanaki

Kenichi Sakai

Yoshihiro Kikuzawa

Kensuke Hata

Kunio Akedo

Koichi Sakaguchi

Toshikazu Satoh

An ultrasonic sensor includes: an ultrasonic element provided to transmit or receive an ultrasonic wave propagating along a directional axis; and an element housing case that includes a case diaphragm having a thickness direction along the directional axis. A resonant space is defined between the case diaphragm and the ultrasonic element for the propagating wave, by housing the ultrasonic element while separating the ultrasonic element from the case diaphragm. A horn shape is defined in the element housing case in which a width of the resonant space in a direction orthogonal to the directional axis is reduced as the resonant space extends in an axial direction parallel to the directional axis.

Ultrasonic sensor

An ultrasonic sensor includes: an element storage case including a case-side diaphragm having a thickness direction along a directional axis; and an ultrasonic element accommodated in the element storage case and spaced apart from the case-side diaphragm. The ultrasonic element includes an element-side diaphragm having the thickness direction along the directional axis and provided by a thin part of a semiconductor substrate. The semiconductor substrate is arranged to provide a closed space between the case-side diaphragm and the element-side diaphragm. The semiconductor substrate is fixed and supported by the element-storage case.

A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.

Load sensor using vertical transistor

There is provided a polymer or low-molecular-weight compound multilayer type organic EL device configured such that a light-emitting layer formed on a hole transport layer includes a mixture of a polymer material and a low-molecular weight material. With such a configuration, the low-molecular-weight material added to the polymer material serves as a binder filling the gap of the steric hindrance to form entanglement of the polymer material and the low-molecular-weight material. This results in that the interface between the hole transport layer and the light-emitting layer is an interface high in adhesion and also high in carrier injectability. Further, optimization of the formation conditions and materials can achieve still higher reliability and longer lifetime.

Organic luminescent device and manufacturing method thereof

A passive matrix type display device includes: a display unit having a display area; first electrodes on the area for switching between a conductive state and a non-conductive state; second electrodes on the area; a driving current source for supplying a driving current to the second electrodes; light-emitting elements at an intersection between the first and second electrodes; a first circuit for controlling a part of first electrodes to the conductive state and for scanning the first electrodes; a second circuit for deciding a part of second electrodes corresponding to a part of light-emitting elements emitting a light; light-emission adjustment elements coupled with the second electrodes for branching an adjustment current from the driving current; and a light-emission adjustment controller for controlling the light from each light-emitting element by controlling the adjustment current.

Passive matrix type display device

Growing community of inventors

Kariya, Japan

Tetsuya Katoh