Tanaka Kikinzoku Kogyo K.k.

Tetsuya Kato

Yohei Mizuno

Chiharu Ishikura

Masahiro Takahashi

Takashi Terui

A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of Vickers hardness is 40 or more and 60 or less, and an average crystal grain size is 15 &#x3bc;m or more and 200 &#x3bc;m or less. A {110} plane of gold is preferentially oriented at the surface to be sputtered.

Gold sputtering target

A gold sputtering target has a gold purity of 99.999% or more. In such a gold sputtering target, an average value of Vickers hardness is 20 or more and less than 40, an average crystal grain size is 15 &#x3bc;m or more and 200 &#x3bc;m or less, and a {110} plane of gold is preferentially oriented to a surface to be sputtered of the gold sputtering target.

Gold sputtering target and method for producing the same

A production method for a gold sputtering target includes: producing a gold sputtering target which is made of gold and inevitable impurities and in which an average value of Vickers hardness is 40 or more and 60 or less, an average value of crystal grain size is 15 &#x3bc;m or more and 200 &#x3bc;m or less, and the {110} plane of gold is preferentially oriented to a surface to be sputtered of the gold sputtering target.

Producing method for gold sputtering target and producing method for gold film

An electrode structure of a back electrode including metal layers laminated in the following order: a Ti layer, a Ni layer, and a Ag alloy layer. The Ag alloy layer includes an Ag alloy and an addition metal M selected from Sn, Sb, and Pd. The electrode structure is configured such that when subjected to elemental analysis with an X-ray photoelectron spectrometer in the depth direction from the Ag alloy layer to the Ni layer, on the boundary between the Ni layer and the Ag alloy layer, an intermediate region where spectra derived from all the metals, Ni, Ag, and the addition element M, can be detected is observable, and, when each metal content in the intermediate region is converted based on the spectra derived from all the metals Ni, Ag, and the addition element M, the maximum of the addition element M content is 5 at % or more.

Electrode structure of back electrode of semiconductor substrate, method for producing the same, and sputtering target for use in producing the electrode structure

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Tomioka, Japan

Tetsuya Kato