Fujifilm Corporation

Fujifilm Electronic Materials U.s.a., Inc.

Tetsuya Kamimura

Tetsuya Shimizu

Satomi Takahashi

Atsushi Mizutani

Tadashi Omatsu

Tomonori Takahashi

Yukihisa Kawada

Masahiro Yoshidome

Tadashi Inaba

Satoru Murayama

Naotsugu Muro

Tadashi Oomatsu

Kazuto Shimada

William A Wojtczak

Kazutaka Takahashi

Bing Du

Hirotaka Takishita

Toshiyuki Saie

Akiko Yoshii

Takashi Nakamura

Toshihide Ezoe

Michihiro Shirakawa

Yoshinori Taguchi

Thomas Dory

Masaru Yoshikawa

Masahiro Mori

Emil A Kneer

Yasuo Sugishima

Hirokazu Kyota

Takuya Tsuruta

Yoshinori Nishiwaki

Takahiro Watanabe

Kyouhei Arayama

Kohei Hayashi

Kee Young Park

Tooru Yamada

Akiko Koyama

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

Cleaning fluid and cleaning method

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10to 10.

Treatment liquid, method for washing substrate, and method for removing resist

The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

Chemical liquid and chemical liquid storage body

A polishing liquid which reduces the occurrence of erosion and scratches on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished is provided. In addition, a chemical mechanical polishing method using the above-mentioned polishing liquid is provided. The polishing liquid is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film. The polishing liquid includes colloidal silica, an organic acid, a specific nitrogen-containing aromatic heterocyclic compound and hydrogen peroxide, and has a pH of 8.5 to 12.

Polishing liquid and chemical mechanical polishing method

The chemical liquid storage includes a container and a chemical liquid, wherein the chemical liquid contains at least one of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A/B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.

Chemical liquid storage body

An object of the present invention is to provide a chemical liquid which makes it possible to form a thinner resist film having a uniform thickness on a substrate by using a small amount of resist composition and demonstrates excellent defect inhibition performance. Another object of the present invention is to provide a pattern forming method. A chemical liquid of the present invention contains a mixture of two or more kinds of organic solvents, in which the organic solvents are selected from the group consisting of compounds represented by Formulae (1) to (7), compounds represented by Formulae (9) to (11), a 3- to 5-membered cyclic ketone compound that may have a substituent, a cyclic ketone compound with 6 or more members that may have a substituent, a lactone compound, and a lactam compound, the chemical liquid contains or does not contain an ether-based compound other than the compounds represented by Formula (1), Formula (5), Formula (7), and Formulae (9) to (11), and in a case where the chemical liquid contains the ether-based compound, a content of the ether-based compound in the chemical liquid is less than 10 mass ppm with respect to a total mass of the chemical liquid.

Chemical liquid, pattern forming method, and kit

A pattern forming method including forming a film using an actinic ray-sensitive or radiation-sensitive resin composition; exposing the formed film; and treating the exposed film using a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

Pattern forming method and method for manufacturing electronic device

A pattern forming method includes a pre-wetting step of coating a substrate with a chemical liquid so as to obtain a pre-wetted substrate, a resist film forming step of forming a resist film on the pre-wetted substrate by using an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of exposing the resist film, and a development step of developing the exposed resist film by using a developer. The chemical liquid contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.

Pattern forming method, kit, and resist composition

There is provided a method of cleaning semiconductor substrates that is excellent in cleaning performance with respect to semiconductor substrates having undergone a chemical mechanical polishing process and corrosion prevention performance with respect to metal films. This method includes a cleaning step of cleaning a semiconductor substrate having undergone the CMP using a cleaning liquid. The cleaning liquid shows alkaline properties and contains: a component A that is at least one selected from the group consisting of a primary amine, a secondary amine, and a tertiary amine, provided that a compound represented by a specific formula (a) is excluded; and a component B that is a compound represented by the specific formula (a). The mass ratio of the component B content to the component A content is not more than 0.01. The cleaning liquid applied to the semiconductor substrate has a temperature of not lower than 30° C.

Post-CMP semiconductor cleaning composition comprising an amine/alkanolamine mixture

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor, a pattern forming method using the same, and a method of manufacturing an electronic device using the same. The treatment liquid for manufacturing a semiconductor comprising: one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, wherein a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.

Treatment liquid for manufacturing semiconductor, pattern forming method using the same, and method of manufacturing electronic device using the same

The present invention provides a chemical liquid having excellent residue removal performance, a rinsing solution, and a resist pattern forming method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an alcohol-based solvent having a C log P value of more than −1.00 and 3.00 or less and a specific compound selected from the group consisting of a compound represented by Formula (1) and a compound represented by Formula (2), in which a content of the specific compound is 0.0010 to 10 ppb by mass with respect to a total mass of the chemical liquid.

Chemical liquid, rinsing solution, and resist pattern forming method

A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified and has an inlet portion, an outlet portion, a filter A, a filter B different from the filter A, and a flow path extending from the inlet portion to the outlet portion, in which the filter A and the filter B are arranged in series between the inlet portion and the outlet portion and have, and the filter A is selected from the group consisting of predetermined filters A1, A2, and A3.

Filter device, purification device, chemical solution production method

An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Chemical liquid purification method and chemical liquid

A storage container storing a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes: one compound (A) that satisfies the requirement (a); one compound (B) or two or more compounds (B) that satisfy the requirement (b); and one inorganic matter (C) or two or more inorganic matters (C) having any element selected from the group consisting of Al, B, S, N, and K. Here, a total content of the compound (B) in the treatment liquid is 10to 0.1 mass %, and a ratio P of the inorganic matter (C) to the compound (B) is 10to 10.

Storage container storing treatment liquid for manufacturing semiconductor

An object is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by KrF excimer laser exposure and ArF excimer laser exposure. Another object is to provide a method for analyzing a test target solution and a method for producing a liquid chemical. A liquid chemical includes an organic solvent; and metal-containing particles containing a metal atom and having a particle size of 10 to 100 nm, in which the number of the metal-containing particles contained is 1.0×10to 1.0×10particles/cm.

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Shizuoka, Japan

Tetsuya Kamimura