Kabushiki Kaisha Toshiba

Tetsuya Kai

Yoshio Ozawa

Katsuyuki Sekine

Yoshitaka Tsunashima

Ryota Fujitsuka

Masaaki Higuchi

Ryuji Ohba

Masayuki Tanaka

Ichiro Mizushima

Takashi Nakao

Katsuaki Natori

Seiji Inumiya

Yasushi Nakasaki

Keisuke Nakazawa

Takuya Konno

Yuuichiro Mitani

Takeshi Hoshi

Kazuaki Iwasawa

Kensuke Takano

Hiroshi Matsuba

Ryu Kato

Shogo Matsuo

According to one embodiment, a semiconductor memory device with memory cells each composed of a vertical transistor, comprises a silicon layer formed into a columnar shape on a silicon substrate, a gate insulating film part in which a tunnel insulating film, a charge storage layer, and a block insulating film are formed to surround the sidewall surface of the silicon layer, and a stacked structure part formed to surround the sidewall surface of the gate insulating film part and in which a plurality of interlayer insulating films and a plurality of control gate electrode layers are stacked alternately. The silicon layer, gate insulating film part, and control gate electrode layer constitute the vertical transistor. The charge storage layer has a region lower in trap level than a region facing the control gate electrode layer between the vertical transistors.

Semiconductor memory device and method of manufacturing the same

A first select transistor is formed on a semiconductor substrate. Memory cell transistors are stacked on the first select transistor and connected in series. A second select transistor is formed on the memory cell transistors. The memory cell transistors include a tapered semiconductor pillar which increases in diameter from the first select transistor toward the second select transistor, a tunnel dielectric film formed on the side surface of the semiconductor pillar, a charge storage layer which is formed on the side surface of the tunnel dielectric film and which increases in charge trap density from the first select transistor side toward the second select transistor side, a block dielectric film formed on the side surface of the charge storage layer, and conductor films which are formed on the side surface of the block dielectric film and which serve as gate electrodes.

Semiconductor memory device having three-dimensionally arranged memory cells, and manufacturing method thereof

In one embodiment, a nonvolatile semiconductor memory device includes a substrate; a tunnel insulating film on the substrate; a charge storage layer on the tunnel insulating film; a block insulating film on the charge storage layer; a first element isolation insulating film in an element isolation trench in the substrate, having a bottom surface lower than an interface between the substrate and the tunnel insulating film, and having a top surface lower than an interface between the charge storage layer and the block insulating film; a second element isolation insulating film on the first element isolation insulating film, protruding to a top surface of the block insulating film, in contact with a side surface of the block insulating film, and having a higher Si concentration than the block insulating film; and a control gate electrode on the block insulating film and on the second element isolation insulating film.

Nonvolatile semiconductor memory device and method of fabricating the same

A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor region, a tunnel insulating film formed on the semiconductor region, a charge-storage insulating film formed on the tunnel insulating film, a block insulating film formed on the charge-storage insulating film, and a control gate electrode formed on the block insulating film, wherein the tunnel insulating film comprises a first region which is formed on a surface of the semiconductor region and contains silicon and oxygen, a second region which contains silicon and nitrogen, a third region which is formed on a back surface of the charge-storage insulating film and contains silicon and oxygen, and an insulating region which is formed at least between the first region and the second region or between the second region and the third region, and contains silicon and nitrogen and oxygen and the second region is formed between the first region and the third region.

Semiconductor device and method of manufacturing the same

A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.

Semiconductor device manufacturing method and silicon oxide film forming method

A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.

Semiconductor device and method of manufacturing same

A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film on the base film. A source gas containing a metal material and a second oxidant having a second oxidation force stronger than the first oxidation force are alternately supplied to form a second insulating film on the first insulating film.

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Yokohama, Japan

Tetsuya Kai