Canon Kabushiki Kaisha

Tetsuya Itano

Kazuo Yamazaki

Kohichi Nakamura

Nobuyuki Endo

Kyouhei Watanabe

Kazuhiro Saito

Toru Koizumi

Hiroki Hiyama

Masanori Ogura

Akira Okita

Koichiro Iwata

Hidekazu Takahashi

Takeshi Ichikawa

Shin Kikuchi

Hideo Kobayashi

Takanori Watanabe

Tomoyuki Noda

Fumihiro Inui

Junji Iwata

Yu Maehashi

Ryuichi Mishima

Sakae Hashimoto

Kei Ochiai

Daisuke Kobayashi

Yasushi Iwakura

Masaki Sato

Mahito Shinohara

Shoji Kono

Masahiro Kobayashi

Daisuke Yoshida

Takeshi Akiyama

Toshiaki Ono

Shunsuke Inoue

Hiroshi Yuzurihara

Masatsugu Itahashi

Hiroaki Naruse

Shigeru Nishimura

Yasuhiro Oguro

Hiroyuki Morita

Shunsuke Takimoto

Kotaro Abukawa

Tatsuya Ryoki

Hisashi Takado

Keigo Nakazawa

Yuichiro Yamashita

Katsuhito Sakurai

Yasushi Matsuno

Hiroaki Kameyama

Shintaro Takenaka

Yu Arishima

Satoshi Kato

Kazuhiro Sonoda

Takashi Muto

Mineo Uchida

Seiichi Tamura

Takahiro Shirai

Yasuji Ikeda

Hidetoshi Hayashi

Yoshiaki Takada

Tatsuhiko Yamazaki

Shinya Nakano

Satoko Iida

Nao Nakatsuji

Yusaku Motonaga

Taro Muraki

An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Photoelectric conversion apparatus and system

A photoelectric conversion apparatus includes a light receiving circuit configured to convert light into an electrical signal, a readout circuit configured to read out an analog signal corresponding to the electrical signal, a ΔΣ A/D converter configured to convert the analog signal into a digital signal, and a control circuit configured to change a gain of the photoelectric conversion apparatus in accordance with a change of a driving mode of the photoelectric conversion apparatus. The analog signal read out by the readout circuit is an analog current signal. The readout circuit includes a variable resistor on a signal path for supplying the analog current signal to the ΔΣ A/D converter. The control circuit changes the gain of the photoelectric conversion apparatus by changing a resistance value of the variable resistor.

Photoelectric conversion apparatus, A/D converter, and equipment

The disclosed apparatus includes a plurality of differential transmitters, and a power supply circuit that supplies a power supply voltage to each of the plurality of differential transmitters. The power supply circuit includes a common circuit unit that defines the power supply voltage supplied to the plurality of differential transmitters, and a plurality of individual circuit units provided in association with the plurality of differential transmitters and each connected to the common circuit unit. Each of the plurality of individual circuit units has an output node that outputs the power supply voltage defined by the common circuit unit to a corresponding differential transmitter of the plurality of differential transmitters, and respective output nodes of the plurality of individual circuit units are connected to each other.

Apparatus, power supply circuit, photoelectric conversion device, imaging device and movable object

A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Member for solid-state image pickup device and method for manufacturing solid-state image pickup device

A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, and a second substrate disposed in a multilayer structure on the first substrate. The photoelectric conversion apparatus further includes a machine learning unit configured to execute processing using machine learning on a signal output from the pixel array, and a signal output unit configured to output a signal corresponding to temperature. Both the machine learning unit and the signal output unit are disposed on the second substrate.

Photoelectric conversion apparatus, photoelectric conversion system, and semiconductor substrate

In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

Solid-state imaging device having projection regions from light shielding and photoelectric conversion

Solid-state image pickup apparatus and image pickup system

A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, a second substrate layered on the first substrate and including an AD conversion portion including a plurality of AD conversion circuits configured to convert a signal output from the first substrate into a digital signal, wherein the second substrate further includes a plurality of signal processing units including a first signal processing unit and a second signal processing unit both configured to perform machine learning processing, wherein each of a plurality of sets includes a plurality of AD conversion circuits that differ between the plurality of sets, wherein the first signal processing unit is arranged to correspond to one of the plurality of sets, and wherein the second signal processing unit is arranged to correspond to another one of the plurality of sets.

Photoelectric conversion apparatus, photoelectric conversion system, moving body

Since a failure related to an output from a sensor is not detected from an image signal and a failure of the sensor is not detected from an output from the sensor in a system including the sensor for abnormality detection, it is not possible to perform the abnormality detection and to indicate the abnormality to the outside of the system. An apparatus includes a pixel area including multiple pixels, multiple sensors, a processing unit that compares signals based on outputs from the multiple sensors with each other, an output unit that outputs information based on a result of comparison.

Apparatus, system, and movable body

A photoelectric converter includes a pixel array including a plurality of pixels, a capacitive coupling amplifier configured to amplify a signal output from the pixel array, and a delta-sigma AD converter configured to convert, into a digital signal, an analog signal output from the amplifier. The amplifier is formed by a plurality of first elements including an active element and a capacitive element. The delta-sigma AD converter is formed by a plurality of second elements including an active element and a capacitive element. A breakdown voltage of at least one of the plurality of second elements forming the delta-sigma AD converter is lower than a breakdown voltage of the plurality of first elements forming the amplifier.

Photoelectric converter, photoelectric conversion system, moving body, and semiconductor substrate

A photoelectric conversion device comprising a pixel unit in which a plurality of pixels each comprising a photoelectric conversion element are arranged in a matrix, and a plurality of delta-sigma AD converters each configured to convert a signal output from the pixel unit into a digital signal, is provided. The plurality of delta-sigma AD converters are divided into at least two groups having different timings of starting AD conversion from each other when converting, into digital signals, signals output from the pixels selected out of the plurality of pixels via a common pixel control line.

Photoelectric conversion device, electronic equipment, and substrate with multiple delta-sigma A/D converters

A photoelectric conversion apparatus includes a light receiving circuit configured to convert light into an electrical signal, a readout circuit configured to read out an analog signal corresponding to the electrical signal, a &#x394;&#x3a3; A/D converter configured to convert the analog signal into a digital signal, and a control circuit configured to change a gain of the photoelectric conversion apparatus in accordance with a change of a driving mode of the photoelectric conversion apparatus. The analog signal read out by the readout circuit is an analog current signal. The readout circuit includes a variable resistor on a signal path for supplying the analog current signal to the &#x394;&#x3a3; A/D converter. The control circuit changes the gain of the photoelectric conversion apparatus by changing a resistance value of the variable resistor.

An embodiment includes: a semiconductor substrate including a pixel well region and a peripheral well region; a pixel ground line arranged above the pixel well region; a pixel well contact between the pixel ground line and the pixel well region; pixels arranged to form columns in the pixel well region; a reference signal generation circuit arranged in the peripheral well region; and comparator units arranged in the peripheral well region, provided to respective columns, and each configured to receive the pixel signal from the pixels on a corresponding column and the reference signal. Each comparator unit includes a comparator having a first input node that receives the pixel signal and a second input node that receives the reference signal, a first capacitor unit between the reference signal generation circuit and the second input node, and a second capacitor unit between the second input node and the pixel ground line.

Photoelectric conversion device and imaging system

A solid-state imaging device includes a pixel that outputs a pixel signal of an analog signal, a readout unit that converts the pixel signal into a digital signal to generate a digital pixel signal, a memory unit that stores the digital pixel signal, and a first inspection signal output unit that outputs a first inspection signal to the memory unit such that the memory unit stores the first inspection signal. The first inspection signal stored in the memory unit is output from the memory unit in a period after output of the digital pixel signal of a frame ends and before output of the digital pixel signal of a next frame starts.

Solid-state imaging device, imaging system, and movable object

Growing community of inventors

Sagamihara, Japan

Tetsuya Itano