Renesas Electronics Corporation

Nec Corporation

Aioi Systems Co., Ltd.

Tetsuya Iida

Yasutaka Nakashiba

Shinichi Kuwabara

Satoshi Eguchi

Yuya Abiko

Akio Ichimura

Masao Kondo

Akihiko Furukawa

Yutaka Hoshino

Satoshi Yamakawa

Tsuyoshi Kawakami

Hideyuki Ono

Shinichi Uchida

Natsuo Yamaguchi

Akira Matsumoto

Takeshi Sato

Shinichi Watanuki

Shunji Kubo

Koichi Ando

Teruhiro Kuwajima

Tomoo Nakayama

Hideyuki Tajima

Eiji Io

Kiyoshi Tada

Seigo Namioka

Takamichi Yoshikawa

Akio Ono

A semiconductor device includes a semiconductor substrate, a semiconductor element, and a multilayer wiring. The semiconductor element is formed on the semiconductor substrate. The multilayer wiring includes a wiring electrically connected with the semiconductor element, and a first inductor. The multilayer wiring is formed on the semiconductor substrate such that the multilayer wiring covers the semiconductor element. The first inductor is formed such that the first inductor electrically isolated from the wiring and is magnetically connected with the wiring.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a cladding layer and a first optical waveguide. The first optical waveguide is formed on the first cladding layer. An end surface of the first optical waveguide is inclined relative to a vertical line perpendicular to an upper surface of the cladding layer.

A semiconductor device includes a first insulating film, a first optical waveguide and a second optical waveguide. The first insulating film has a first surface and a second surface opposite to the first surface. The first optical waveguide is formed on the first surface of the first insulating film. The second optical waveguide is formed on the second surface of the first insulating film. The second optical waveguide, in plan view, overlaps with an end portion of the first optical waveguide without overlapping with another end portion of the first optical waveguide.

A semiconductor device has a first semiconducting layer including an optical waveguide, a dielectric layer formed on the optical waveguide, and a conductive layer formed on the dielectric layer. A refractive index of a material of the conductive layer is smaller than a refractive index of a material of the first semiconductor layer.

A semiconductor device includes a semiconductor substrate having a first surface, a second surface opposite to the first surface, and having a first recess portion formed on the first surface, a first cladding layer located in the first recess portion, and a first optical waveguide formed on the first cladding layer. The first optical waveguide overlaps with the first cladding layer in plan view.

Semiconductor device and including an optical waveguide and method of manufacturing the same

A semiconductor device includes a base member, a multilayer wiring layer, and a first resistive element. The multilayer wiring layer is formed on the base member. The first resistive element is formed in the multilayer wiring layer. The first resistive element includes a first conductive part, a second conductive part and a third conductive part. The second conductive part is formed over the first conductive part. The third conductive part electrically connects the first conductive part and the second conductive part with each other. A length of the third conductive part in a first direction along a surface of the base member is greater than a length of the third conductive part in a second direction along the surface of the base member and perpendicular to the first direction.

Semiconductor device

The semiconductor module includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip includes an optical device such as an optical waveguide and wiring formed over the optical device. The second semiconductor chip include semiconductor elements such as MISFET, and wiring formed over the semiconductor elements. A top surface of the first semiconductor chip is laminated with a top surface of the second semiconductor chip such that the first and second wirings are directly contacted with each other.

Semiconductor module, manufacturing method thereof, and communication method using the same

According to the present invention, a first semiconductor chip includes a semiconductor substrate, an optical waveguide formed on an upper surface of the semiconductor substrate, and a concave portion formed in the semiconductor substrate in a region that differs from a region in which the optical waveguide is formed. A second semiconductor chip includes a compound semiconductor substrate, and a light emitting unit formed on an upper surface of the compound semiconductor substrate and emitting a laser beam. The second semiconductor chip is mounted in the concave portion of the first semiconductor chip, and a pedestal which is an insulating film is formed between a bottom surface of the concave portion and a back surface of the compound semiconductor substrate.

Semiconductor device and manufacturing method of the same

The control system according to embodiments includes a switching element, a control unit controlling the conductive state of the switching element, and a first capacitor storing charge supplied to the control unit. The first capacitor and the control unit are connected with each other via the switching element.

Control system, semiconductor device and method of the semiconductor device

The semiconductor device includes an optical waveguide WGformed in a planar manner, and a three-dimensional optical waveguide WGoptically connected with the optical waveguide WGand including a curved shape.

A semiconductor device has a coil and wirings under the coil. In addition, a distance between the upper face of the wirings and the bottom face of the coil is 7 &#x3bc;m or larger, and the wirings have a plurality of linear wiring parts each wiring width of which is 1 &#x3bc;m or smaller. In addition, the linear wiring parts do not configure a loop wiring, and the coil and the linear wiring parts are overlapped with each other in planar view.

A method of manufacturing a semiconductor device includes a step of: patterning a conductive film formed over an interlayer insulating film so as to form a coil and a conductive pattern in the same layer, and then forming unevennesses on a surface of the interlayer insulating film by etching a portion of the interlayer insulating film with using the coil and the conductive pattern as a mask.

Semiconductor device with inductive coupling and method of manufacturing the same

The semiconductor module includes a semiconductor chip and a semiconductor chip. The semiconductor chip includes an optical device such as an optical waveguide, an optical receiver, and a grating coupler, and a wiring formed over the optical device. The semiconductor chip includes a semiconductor element such as a MISFET formed in the semiconductor substrate, and a wiring formed over the semiconductor element. a top surface of the semiconductor chip is laminated to a top surface of the semiconductor chip such that the wirings are in direct contact with each other. In the semiconductor substrate, a through hole having a circular shape in plan view is formed, in the through hole, an insulating film is formed as a cladding layer, and the semiconductor substrate surrounded by the through hole constitutes an optical waveguide.

Semiconductor module and method of manufacturing the same, and method of communication using the same

A semiconductor device includes a first semiconductor chip having a first inductor element and a second inductor element on a first main surface side, a second semiconductor chip having a third inductor element on a second main surface side, and a third semiconductor chip having a fourth inductor element on a third main surface side. The first and second inductor elements are arranged to be separated from each other in a first direction of the first main surface, the first and second main surfaces face each other, and the first and third inductor elements overlap each other. The first and third main surfaces face each other, the second and fourth inductor elements overlap each other, and a creepage distance between the second and third semiconductor chips is larger than a separation distance between the second and third semiconductor chips.

In an optical waveguide supplied with electricity by using a heater, miniaturization of the device is achieved by enhancing heat dissipation efficiency and heat resistance. In a modulator including an optical waveguide formed on an insulating film, a first interlayer insulating film that covers the optical waveguide, a heater formed on the first interlayer insulating film, and a second interlayer insulating film that covers the heater, a heat conducting portion adjacent to the optical waveguide and the heater and penetrating the first and second interlayer insulating films is formed.

Growing community of inventors

Ibaraki, Japan

Tetsuya Iida