Sumitomo Electric Industries, Limited

Nissan Motor Company Limited

Panasonic Corporation

Renault S.a.s.

Matsushita Electric Industrial Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Kabushiki Kaisha Toshiba

Sumitomo Electric Sintered Alloy, Ltd.

Honda Motor Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Toshiba Digital Solutions Corporation

Nissan Motor Co , Ltd.

Rohm Co., Ltd.

Toyo Aluminum K.k.

Tetsuya Hayashi

Takashi Sasaki

Hideaki Tanaka

Masakatsu Hoshi

Shigeharu Yamagami

Yoshio Shimoida

Wei Ni

Tetsuya Nakanishi

Tsumoru Ohata

Toshiharu Marui

Shigeo Ikuta

Ryota Tanaka

Keiichiro Numakura

Kohei Suzuki

Saichirou Kaneko

Yusuke Fukumoto

Junji Nakajima

Keisuke Takemoto

Akiko Fujino

Takemi Hasegawa

Osamu Shimakawa

Yoshinobu Takeda

Taku Shimomura

Atsushi Inoue

Yusuke Zushi

Yasuaki Hayami

Takashi Takano

Eisuke Sasaoka

Shigemi Maeda

Hideharu Tajima

Yuichi Iwasaki

Masao Fukunaga

Takuji Nagashima

Kouji Nishida

Akinori Okubo

Kaoru Inoue

Yoshihisa Adachi

Yoshiaki Tamura

Yoshinori Murakami

Tetsuya Okumura

Atsushi Etoh

Kiyomi Kato

Kenta Emori

Masaki Yamamoto

Hideyuki Nishizawa

Masato Fujikawa

Hirohisa Yamada

Teruyoshi Mihara

Kraisorn Throngnumchai

Tomoyuki Ueno

Yasuhiro Harada

Toshihiko Sakai

Takayuki Naka

Hirotaka Sakuma

Toshihiko Kaji

Yasuomi Kaneuchi

Shigeru Matsumoto

Akira Kakinuma

Toshiro Shinohara

Yugaku Abe

Keisuke Yoneda

Yuji Saito

Tomoki Tsuji

Yusuke Odani

Kikuko Sugimae

Reika Ichihara

Yuki Kawaguchi

Takashi Nakamura

Go Mori

Masaru Watanabe

Noboru Iwata

Tatsuya Konishi

Masayuki Shigematsu

Hideaki Fujita

Masayuki Kato

Tetsuya Haruna

Shinji Kasamatsu

Eitaro Nakamura

Yoshishige Takano

Minoru Nishizawa

Ikuo Nakano

Mineo Miura

Yuji Abe

Yasuhiro Ueyama

Toshihiro Kai

Noriaki Kawamoto

Shigehiro Nagano

Jun Kusui

Takashi Watsuji

Haruo Nakaji

Akiei Tanaka

Yuuichi Mitose

Kentaro Shin

Tomoyuki Ishimine

Shin-ichi Yamagata

Kiyoaki Akechi

Akira Nagasaki

Mitsuo Osada

Yoshitoshi Hagiwara

Yosuke Tomita

The MCF of the present disclosure suppresses XT and leakage loss at 1.565 μm or 1.625 μm for bidirectional communication. The MCF comprises 12 core units each including a core and a depressed layer, a common cladding, and a resin coating. The units are arranged so that no adjacent relationship is established between cores each having an adjacent relationship with a specific core selected from the units, and are arranged so that centers of the units are line symmetric with a symmetry axis intersecting with the central axis and passing through none of the centers of the units. The resin coating's diameter is 250±15 μm, an effective area at 1.550 μm is 70 μmor more, and a 22 m-length cable cutoff wavelength is 1.530 μm or less. A center-to-center interval between adjacent cores, a shortest distance from the core center to the cladding interface, and a cladding's diameter satisfy specific conditions.

Multi-core optical fiber and multi-core optical fiber cable

An optical waveguide device that enables single-mode coupling between cores to be coupled by controlling optical signal intensity variation due to an MPI. The optical waveguide device includes a first device end surface, a second device end surface, a waveguide, and a cladding layer. The waveguide has a first waveguide end surface and a second waveguide end surface, and light beams of a plurality of modes having different orders are guided. Further, the waveguide has one or more bent portions. The cladding layer has a refractive index lower than a refractive index of the waveguide. The waveguide has a waveguide length L of 5×10[nm] or more and 100×10[nm] or less, and has a structure in which an inter-mode group delay time difference Δβ1 satisfies a condition given by |Δβ1|≤½×10[s]/L.

Optical waveguide device and optical communication system including same

A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.

Semiconductor device, power module and manufacturing method for the semiconductor device

A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

Semiconductor device and method for manufacturing same

The disclosure relates to an optical connection device reducing a connection loss between an SCF and an MCF. The optical connection device includes plural relay fibers and a capillary having third and fourth end faces. Each relay fiber includes a first core of Δ1, a second core of Δ2, and a cladding of Δ3. The capillary includes a tapered portion with an outer diameter ratio R of the fourth end face to the third end face of 0.2 or less. In each relay fiber, a value of Formula (V2−V1)/R falls within a range from 156% μmto 177% μm, V1 (% μm) is given by (π·r1)×(Δ1−Δ2) by using a radius r1(μm) of the first core, and V2 (% μm) is given by (π·r2)×(Δ1−Δ2) by using a radius r2(μm) of the second core.

Optical connection device

An MCF or the like according to the present disclosure ensures sufficient manufacturing tolerance, is excellent in mass productivity, and is also capable of suppressing degradation of splice loss. The MCF includes four cores that extend along a central axis, and a common cladding. On a cross-section, the common cladding has a circular outer periphery, the four cores are arranged at positions to be line symmetric with respect to a straight line that intersects with a central axis and that intersects with none of the four cores, and a core arrangement defined by the four cores has rotational symmetry once with central axis being a center of rotation.

A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.

Semiconductor device

A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

An MCF having a structure excellent in mass productivity and suppressing increases in splicing cost and loss are provided. The MCF includes 12 or 16 cores, a cladding, and a coating. The cores are arranged at positions of line symmetry while no adjacent relationship is established between the cores having an adjacent relationship with any core. A coating diameter is 235-265 &#x3bc;m, a cladding diameter CD is from CD&#x2212;1 &#x3bc;m to CD+1 &#x3bc;m with a nominal value CDof 195 &#x3bc;m or less, an MFD at 1310 nm is from MFD-reference-value &#x2212;0.4 &#x3bc;m to the MCF-reference-value+0.4 &#x3bc;m with the MFD-reference-value of 8.2-9.2 &#x3bc;m, and a 22 m-cable-cutoff wavelength &#x3bb;is 1260-1360 nm. A core's zero-dispersion wavelength is a wavelength-reference-value &#x2212;12 nm to the wavelength-reference-value+12 nm with the wavelength-reference-value of 1312-1340 nm, and a dispersion slope at the wavelength is 0.092 ps/(nm&#xb7;km) or less. A shortest distance from a cover-cladding interface to each core center, a structure, and optical characteristics satisfy predetermined conditions.

A mode-dependent loss measurement device measures a mode-dependent loss of a measurement target optical fiber including a coupled MCF. The device includes a light source, a light receiver, a mode coupled state changer, and an analysis unit. The light source inputs light to an input end of an excitation optical fiber including another coupled MCF. The light receiver detects a sum of powers of outputted light beams from a plurality of core end faces positioned on an output end of the measurement target optical fiber. The mode coupled state changer changes a mode coupled state of the excitation optical fiber. The analysis unit obtains a mode-dependent loss of the measurement target optical fiber from variations in optical powers detected by the light receiver.

Mode-dependent loss measurement device and mode-dependent loss measuring method

This MCF ensures sufficient manufacturing tolerance, is excellent in mass productivity, and is also capable of suppressing degradation of splice loss. The MCF includes four cores and a common cladding. Each core has adjacent relationships with two cores of remaining cores, an adjacent core interval &#x39b; is from &#x39b;&#x2212;0.9 &#x3bc;m to &#x39b;+0.9 &#x3bc;m, a common cladding diameter is from 124 &#x3bc;m to 126 &#x3bc;m, an MFD, &#x3bb;and dat a wavelength of 1310 nm satisfy a predetermined relationship, the MFD is from a MFD-reference-value&#x2212;0.4 &#x3bc;m to the MFD-reference-value+0.4 &#x3bc;m with the MFD-reference-value of from 8.6 &#x3bc;m to 9.2 &#x3bc;m, a zero-dispersion wavelength is from a wavelength-reference-value&#x2212;12 nm to the wavelength-reference-value+12 nm with the wavelength-reference-value of from 1312 nm to 1340 nm, a dispersion slope at a zero-dispersion wavelength is 0.092 ps/(nm&#xb7;km) or less, &#x3bb;is 1260 nm or less, and a predetermined structural condition and an optical condition are satisfied.

A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.

Semiconductor device, power module and method for manufacturing the semiconductor device

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Yokosuka, Japan

Tetsuya Hayashi