Sumitomo Electric Industries, Limited

Hitachi, Ltd.

Tetsuya Hattori

Takahiro Imai

Yoshiki Nishibayashi

Chie Fukuda

Toshio Nomaguchi

Kazunori Fujimoto

Hiroshi Yoshikawa

Hideaki Sato

Shunsuke Yamada

Tomihito Miyazaki

Toru Iwashima

Shigeru Semura

Morihiro Seki

Takeshi Kishi

An insulating layer is formed on a substrate made of silicon carbide. By performing etching using a mask layer formed on the insulating layer, a contact hole is formed in the insulating layer to expose a contact region, which is a portion of a main surface of the substrate. The step of forming the contact hole includes a step of providing the contact region with a surface roughness Ra of not less than 0.5 nm. An electrode layer is formed in contact with the contact region. By heating the electrode layer and the substrate, siliciding reaction is caused between the electrode layer and the contact region.

Method for manufacturing silicon carbide semiconductor device

A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the stacked semiconductor layer, the silicon oxide film having a predetermined film stress and a predetermined thickness; a third step of forming a strip-shaped groove in the silicon oxide film by etching the silicon oxide film, using a resist pattern formed on the silicon oxide film, until a surface of the stacked semiconductor layer is exposed; and a fourth step of growing a second III-V group compound semiconductor layer in the groove using the silicon oxide film as a selective mask.

Method of producing semiconductor optical device

The present invention provides a semiconductor laser diode prevents not only the adhesion of the upper electrode but the heat dissipation of the mesa from degrading. The laser diode includes a substrate, portion of which forms a mesa including an active layer, an insulating layer formed so as to bury the mesa, and an electrode formed on the mesa and the insulating layer. This insulating layer may be selected from SiO, SiON, SiN, AlOor ZrOand formed by the inductive coupling plasma-enhanced chemical vapor deposition (ICP-CVD) technique.

Method for manufacturing semiconductor optical device using inductive coupled plasma-enhance CVD

A process for the semiconductor laser diode is disclosed, which prevents the abnormal growth occurred at the second growth for the burying region of the buried hetero structure. The ICP (Induction-Coupled Plasma) CVD apparatus forms a silicon oxide file with a thickness of above 2 &#x3bc;m as adjusting the bias power P. Patterning the silicon oxide mask and dry-etching the semiconductor layers, a mesa structure including the active layer may be formed. As leaving the patterned silicon oxide film, the second growth for the burying region buries the mesa structure. The residual stress of the silicon oxide film is &#x2212;250 to &#x2212;150 MPa at a room temperature, while, it is &#x2212;200 to 100 MPa at temperatures from 500 to 700&#xb0; C.

Method to fabricate semiconductor optical device

A method of manufacturing an optical waveguide device that is capable of reducing the imbalance in the refractive index profile of a core, and an optical waveguide device that has the reduced imbalance in the refractive index profile are provided. The method of manufacturing an optical waveguide device has the steps of forming a groove in a first cladding layer having a first dopant that lowers the refractive index of the first cladding layer below the refractive index of pure silica glass, forming a core in the groove, and forming a second cladding layer having a second dopant that lowers the refractive index of the second cladding layer below the refractive index of pure silica glass, over the first cladding layer and the core.

Optical waveguide device and method of manufacturing same

The present invention provides a glass optical waveguide device that comprises silica glass and is usable despite a relatively large refractive index difference between its core layer and cladding layer, and a method of manufacturing such device. This optical waveguide device includes a core layer on or over a substrate and a cladding layer that covers the core layer, wherein the core layer is made of silica glass containing an additive for raising the refractive index, and the relative refractive index difference of the core layer with respect to the cladding layer is at least 2.5%. The method of manufacturing this optical waveguide device includes the steps of placing a substrate over an electrode plate that is connected to a first high-frequency power supply within a vacuum vessel, introducing a raw material gas into the vacuum vessel and generating a plasma within the vacuum vessel with high-frequency power supplied from a second high-frequency power supply, and simultaneously forming an optical waveguide film over the substrate while supplying high-frequency power from the first high-frequency power supply to the electrode plate.

Optical waveguide device, and method of manufacturing optical waveguide device

The present invention concerns an optical waveguide device having a structure for effectively suppressing variation in optical characteristics due to temperature change without causing increase in device size, and a fabrication method thereof. The optical waveguide device has a structure in which a first main member having a positive coefficient of linear expansion is fixed to a sub member having a negative coefficient of linear expansion. The first main member is provided with an undercladding, a core functioning as an optical waveguide provided on a plane of the undercladding, and an overcladding provided so as to cover the core between the undercladding and the overcladding. The first main member is made, for example, of a silica glass or silicon based material and the core is doped with a dopant for increasing the refractive index. While covering the whole of at least one major surface of the first main member, the sub member is fixed to the major surface.

Optical waveguide devices and methods of fabricating the same

A casing construction including a left post and a right post, each of the left post and the right post being large in width and formed at its front surface with a mounting portion for mounting a plurality of shelves in a plurality of vertically arranged layers, at its rear surface with a mounting portion for mounting a back board, a mounting portion at its upper end for mounting a ceiling board and a mounting portion at its lower end for mounting a floor board. The left post and right post having a variety of functions to perform have the shelves, back board, ceiling board and floor board threadably connected thereto. In this casing construction, the left post and right post perform the function of separating the shelves from cables. A plurality of such casings can be arranged in side-by-side relation to provide a series of casings depending on the size of the electronic equipment intended.

Growing community of inventors

Yokohama, Japan

Tetsuya Hattori