Sharp Kabushiki Kaisha Corporation

Denki Kagaku Kogyo Kabushiki Kaisha

Ge Phosphors Technology, LLC

Tetsuya Hanamoto

Masatsugu Masuda

Kenji Terashima

Yoshihiko Tani

Akihiro Kurisu

Masanori Watanabe

Katsuji Iguchi

Kiyoshi Suzuki

Tomoya Inoue

Masumi Nakamichi

Kaori Kanesaka

Hiroyuki Kashihara

Toshiaki Asai

Hirotaka Watanabe

Wataru Takase

Tomokazu Sagara

Hideyuki Emoto

Toshimasa Hamada

Shohichi Katoh

Tadashi Takeoka

Masaru Iwasaki

Masahiko Kimoto

Takahiro Funakoshi

Koji Miyake

Shohichi Kato

Hironori Nagasaki

Shoichi Kondo

Mathieu Senes

A display device includes a hole portion provided in a non-display region. A first opening that surrounds the hole portion is formed in at least one inorganic insulating film in a plurality of inorganic insulating films of the non-display region. A sealing inorganic insulating film includes an edge sealing portion in a frame shape, the edge sealing portion being formed so as to cover an edge of the at least one inorganic insulating film around the hole portion. A reverse-tapered bank structure portion in a frame shape and a protruding portion including an inorganic film in a frame shape are formed to surround the first opening on the at least one inorganic insulating film. Both side surfaces of the reverse-tapered bank structure portion are tilted in a reverse tapered shape whose width between both the side surfaces gradually decreases toward a side of a resin substrate.

Display device

A method for manufacturing a display device including a light-emitting element, the method includes: storing, in a manufacturing process of the display device, a plurality of abutting positions where a back face of a support substrate locally abuts a manufacturing apparatus; forming, on a surface of the support substrate on a side on which the light-emitting element is to be formed, a peeling layer at a position opposing at least one position of the plurality of abutting positions stored; forming, on the support substrate, a resin layer to cover the peeling layer; forming a TFT layer on the resin layer; forming the light-emitting element on the TFT layer; and peeling the support substrate and the resin layer.

Method for manufacturing display device

A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Nitride semiconductor light-emitting element

Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a &#x3b2;-type SiAlON substantially represented by a general formula: EuaSibAlcOdNe, where 0.005&#x2266;a&#x2266;0.4, b+c=12, d+e=16, wherein 60% or more of the phosphor particle group is composed of the phosphor particles in which a value obtained by dividing a longer particle diameter by a shorter particle diameter is greater than 1.0 and not greater than 3.0. A high-efficiency and stable light emitting apparatus using a &#x3b2;-type SiAlON, which includes a light converter using the phosphor particle group, and a phosphor particle group therefor are also provided.

Phosphor particle group and light emitting apparatus using the same

A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers.

Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a &#x3b2;-type SiAlON represented by a general formula: EuSiAlON, where 0.005&#x2266;a&#x2266;0.4, b+c=12, d+e=16, wherein a mean value of a value obtained by dividing a longer particle diameter by a shorter particle diameter is not greater than 1.75. Also provided are a light emitting apparatus using the phosphor particle group in a light converter, and a liquid crystal display television using the light emitting apparatus. With these, a high-efficiency and stable light emitting apparatus using a &#x3b2;-type SiAlON, and a phosphor particle group therefor are provided.

Phosphor particle group, light emitting apparatus using the same, and liquid crystal display television

Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a &#x3b2;-type SiAlON substantially represented by a general formula: EuaSibAlcOdNe, where 0.0055&#x2266;a&#x2266;0.4, b+c=12, d+e=16, wherein 60% or more of the phosphor particle group is composed of the phosphor particles in which a value obtained by dividing a longer particle diameter by a shorter particle diameter is greater than 1.0 and not greater than 3.0. A high-efficiency and stable light emitting apparatus using a &#x3b2;-type SiAlON, which includes a light converter using the phosphor particle group, and a phosphor particle group therefor are also provided.

A semiconductor light-emitting device has a semiconductor light-emitting element for emitting light with emission wavelengths of 390 to 420 nm, wherein the wavelengths of light from the semiconductor light-emitting element are converted by a fluorescent substance having a monochromatic emission peak. The emission wavelengths of 390 to 420 nm, which have almost no adverse effect on human bodies and components of the semiconductor light-emitting device, are in a low human visibility range. Since light whose wavelengths are converted by the fluorescent substance are hardly affected by direct light from the semiconductor light-emitting element, light from the fluorescent substance has a favorable color tone. Also, the semiconductor light-emitting device allows desired luminous colors to be obtained only by changing fluorescent substance materials without changing the structure of the semiconductor light-emitting device or the semiconductor light-emitting element.

Semiconductor light-emitting device and light-emitting display therewith

Semiconductor light-emitting device and light-emitting display device therewith

Disclosed is a photodetector with a multilayer filter. A light-receiving substrate is mounted on a recessed portion of a ceramic stem. An electrode pad is formed on a P-type layer of the light-receiving substrate while another electrode pad is formed on an N-type layer of the light-receiving substrate. An optical multilayer filter is formed on the light-receiving substrate except the regions of the electrode pads. Further, an epoxy transparent resin is poured into the recessed portion of the stem and then cured, so that a resin portion to cover the light-receiving substrate is formed. The optical multilayer filter is formed of amorphous low refractive index films made of SiC.sub.2 and amorphous high refractive index films made of TiO.sub.2. The amorphous high and low refractive index films are alternately stacked.

Photodetector with a multilayer filter and method of producing the same

A reflective type photointerrupter including: a resin case formed with a light emitting chip mounting recess and a light receiving chip mounting recess; a metallic deposit wiring formed in the recesses; and a light emitting chip and a light receiving chip respectively mounted on the light emitting chip mounting recess and the light receiving chip mounting recess and sealed with a resin material; the recesses being arranged in side-by-side relation and partitioned by an intermediate wall.

Reflective type photointerrupter

Growing community of inventors

Osaka, Japan

Tetsuya Hanamoto