Tokyo Electron Limited

Tohoku University

Other

Mitsubishi Heavy Industries Limited

Foundation for Advancement of International Science

Oht Inc.

Zeon Corporation

Sumitomo Osaka Cement Co., Ltd.

V Technology Co., Ltd.

Tadahiro Ohmi

Daisho Denshi Co., Ltd.

Tetsuya Goto

Masaki Hirayama

Takaaki Matsuoka

Shigetoshi Sugawa

Kiyotaka Ishibashi

Masahiro Okesaku

Toshihisa Nozawa

Akinobu Teramoto

Rihito Kuroda

Atsutoshi Inokuchi

Toshiro Yasuda

Michinobu Mizumura

Yasuyuki Shirai

Hiroyuki Shibata

Naohisa Goto

Masayuki Motoya

Masafumi Kitano

Makoto Matsui

Tetsuya Fujino

Shigemi Murakawa

Makoto Takeshita

Masayuki Matsuda

Ryuta Yamaguchi

Yoshio Sugimoto

Kohei Watanuki

Hiroshi Hamori

Yoshihiro Arakawa

Masakatsu Nakano

Shinichi Murakami

Kazutoshi Kamibayashi

Nobuyuki Shigeoka

A capacitive sensor includes a sensing electrode, a first electrode pad, a substrate, and a second electrode pad. The sensing electrode outputs a signal corresponding to a capacitance between the sensing electrode and a detection target. The first electrode pad is coupled to the sensing electrode. The substrate includes a substrate surface portion and a step portion. On the substrate surface portion are the sensing electrode and the first electrode pad mounted. The step portion is provided at a position in the substrate lower than the substrate surface portion. The second electrode pad is mounted on the step portion and coupled to an external line.

Capacitive sensor and manufacturing method of capacitive sensor

A capacitance detection area sensor includes capacitance sensor elements arranged in a two-dimensional array, is shaped into an appropriate shape, and capacitively coupled to an external electrode. To the external electrode, a sensing signal having a potential difference is supplied. The first and second sensor output signals are acquired from a capacitance sensor element capacitively coupled to the external electrode, at the timing of the sensing signal being a first signal and being a second signal, respectively. A differential signal is generated from a difference between the acquired first and second sensor output signals, and an image indicating the shape of the external electrode is generated based on the level of the differential signal, in different colors or different tones.

Capacitance detection area sensor and conductive pattern sensing apparatus having capacitance detection area sensor

In a waveguide-type optical modulation element that modulates light by applying radio frequency signals to an electrode, the realization of the additional broadening of the bandwidth by improving the degree of freedom in the design of the electrode is enabled. An optical modulation element, which includes optical waveguides provided in a substrate and electrodes that control light waves propagating through the optical waveguides and modulates light by propagating radio frequency signals to the electrodes, in which the electrodes include conductive layers made of copper or a copper alloy and protective layers made of a material other than copper and a copper alloy.

Optical modulation element

In an oxide semiconductor device including an active layer region constituted by an oxide semiconductor, stability when a stress is applied is improved. The oxide semiconductor device includes an active layer region constituted by an oxide semiconductor of indium (In), gallium (Ga), and zinc (Zn), wherein the active layer region contains an element selected from titanium (Ti), zirconium (Zr), and hafnium (Hf) that are Group 4 elements, or carbon (C), silicon (Si), germanium (Ge), and tin (Sn) that are Group 14 elements at a number density in a range of 1&#xd7;10to 1&#xd7;10cm.

Oxide semiconductor device and method for manufacturing same

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50&#xb0; C. lower than the baking temperature is substantially controlled to 0.5 to 5&#xb0; C./min in range is provided.

Method of production of semiconductor device

Provided is a method for supplying a deposition material including a heating step of heating and evaporating a deposition material accommodated in a material accommodating section in which the deposition material is accommodated, a supply step of supplying the deposition material into the material accommodating section by feeding and melting a deposition material in a solid phase toward the melted deposition material in the material accommodating section, and a melted state detection step of detecting a melted state of the deposition material in the solid phase after supply in the supply step.

Method for supplying deposition material, method for producing substrate, control device and deposition device

In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, it is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and the substrate is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

Magnetron sputtering apparatus

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 &#x3bc;m to 70 &#x3bc;m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 &#x3bc;m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Shower plate sintered integrally with gas release hole member and method for manufacturing the same

An alumina- or magnesia-reducing process in which a greenhouse gas or substance harmful to the human body is not emitted, which can achieve improved energy efficiency in comparison with the Hall-Heroult or Pidgeon methods. The process includes: introducing an alumina or magnesia powder with a carrier gas to the upstream side of a throat provided on a reducing unit; pressure-transferring the powder and carrier gas to the throat by an operative gas introduced to the upstream side of the throat; irradiating the throat with a laser beam to convert the alumina or magnesia into a plasma state and dissociate the alumina or magnesia thermally; jetting the thermally dissociated product through a nozzle provided on the downstream side of the throat at a supersonic speed to form a frozen flow; and isolating aluminum or magnesium. Hydrogen may be added to the operative gas to accelerate the reduction of alumina or magnesia.

Method for reducing alumina or magnesia by utilizing supersonic gas flow

A couch with a patient-inclining device () includes a tabletop (), a pair of second rails () arranged below the tabletop, a second moving section () having a pair of second sliders () which are movable on the pair of second rails, a pair of block bodies (A andB) which are movable on the pair of second rails, drive mechanisms (A andB) which linearly move the block bodies with respect to the second moving section, a support section () provided on the second moving section to support the tabletop, and levers (A andB), each having one end connected to the tabletop and the other end connected to the associated one of the pair of block bodies.

Couch with patient-inclining device

Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.

Wiring board and method of manufacturing the same

A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.

Semiconductor device manufacturing method and semiconductor device

A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiOcomposition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

Microwave plasma processing apparatus, dielectric window for use in the microwave plasma processing apparatus, and method for manufacturing the dielectric window

Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Growing community of inventors

Sendai, Japan

Tetsuya Goto