Toshiba Memory Corporation

Kioxia Corporation

Tetsuya Furukawa

Hiroyasu Tanaka

Mitsuhiro Noguchi

Shinichi Watanabe

Tomoaki Shino

Yukio Nishida

A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.

Growing community of inventors

Yokohama, Japan

Tetsuya Furukawa