Alps Electric Co., Ltd.

Tetsuya Fukuda

Katsuya Kikuiri

Yoshinobu Nakamura

Kiyoshi Sato

Mitsuru Watanabe

Hiroyuki Kobayashi

Hisanobu Okawa

Takayuki Minagawa

Shigeaki Yamauchi

Takuya Adachi

A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same width as the width of the cavity at a desired section in the one silicon substrate and reducing the width of the cavity from the boundary portion toward the diaphragm center.

Semiconductor pressure sensor

A package is mainly formed of a package body having a storage area for storing a pressure sensor, a capacity type pressure sensor stored in the storage area of the package body, a lid seals the package body in which the pressure sensor is stored, an adhesive agent for fixing the pressure sensor to the package body, and a bonding wire for electrically coupling a bonding pad of the pressure sensor and a conductive portion of the package body. An adhesive area of the package body and the pressure sensor is set to the area other than a projection area of the diaphragm of the pressure sensor on a mount bottom surface. This makes it possible to provide the package for the pressure sensor capable of detecting the pressure with high sensitivity although the gap between the substrate and the diaphragm has the value with the magnitude of several &#x3bc;ms.

Pressure sensor package structure

A pressure-sensor package mainly includes a pressure sensor, a support substrate, and a resin layer. The pressure sensor includes a glass substrate having a fixed electrode, and a silicon substrate having a diaphragm that is disposed apart from the fixed electrode by a predetermined distance. The support substrate is a silicon/glass composite substrate on which the pressure sensor is mounted such that the support substrate and the diaphragm face each other. The resin layer fixes the pressure sensor and the support substrate together. The pressure sensor is mounted on a mounting area of the support substrate with a joint member therebetween. Accordingly, even if a gap between the support substrate and the diaphragm has a size of about several micrometers, the pressure-sensor package is capable of performing pressure detection with high sensitivity.

Package structure of pressure sensor

A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.

Pressure sensor having gold-silicon eutectic crystal layer interposed between contact layer and silicon substrate

A capacitive pressure sensor is provided. The capacitive pressure sensor includes a glass substrate that has a pair of surfaces facing each other. A first silicon substrate has a fixed electrode passing through the glass substrate to be exposed at one surface and a projection passing through the glass substrate to be exposed at the one surface. A second silicon substrate is bonded to the one surface of the glass substrate and is disposed to face the fixed electrode so as to form a cavity between the second silicon substrate and the fixed electrode.

Capacitive pressure sensor

A capacitive pressure sensor and method of manufacturing the same is provided. The capactive pressure sensor includes a glass substrate that has a pair of surfaces opposite to each other. A recessed portion is provided to form a cavity on one of the pair of principal surfaces. A first protruding portion provided in the recessed portion. A first silicon substrate has a fixed electrode formed on the first protruding portion, and a movable electrode disposed with a predetermined interval between the fixed electrode and the movable electrode.

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Niigata-ken, Japan

Tetsuya Fukuda