Fujitsu Corporation

Fujitsu Semiconductor Limited

Socionext Inc.

Fujitsu Microelectronics Limited

Tetsuya Fujisawa

Mitsutaka Sato

Yoshitaka Aiba

Katsuhiro Hayashida

Junichi Kasai

Hirohisa Matsuki

Toshio Hamano

Yoshiyuki Yoneda

Masamitsu Ikumo

Masaaki Seki

Shigeyuki Maruyama

Kazuto Tsuji

Michio Sono

Yoshihiro Kubota

Hiroshi Yoshimura

Yutaka Makino

Seiichi Orimo

Masaki Waki

Tadashi Uno

Kazuhiko Mitobe

Yoshitsugu Katoh

Hiroshi Inoue

Masataka Mizukoshi

Akira Takashima

Toshimi Kawahara

Ryuji Nomoto

Mitsunada Osawa

Osamu Igawa

Masahiko Ishiguri

Noriaki Shiba

Kosuke Otokita

Yasunori Fujimoto

Eiji Watanabe

Eiji Yoshida

Kazuhiro Tashiro

Naoyuki Watanabe

Takashi Yamane

Akira Okada

Masanori Yoshimoto

Kazuyuki Imamura

Naohito Kohashi

Norio Taniguchi

Mitsuo Abe

Hiroya Kawasaki

Kaname Ozawa

Masashi Ohnishi

Seiji Kawaguchi

Toyoshige Kawashima

Yoshiyuki Yonoda

Kousuke Otokita

A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

Semiconductor device having a high frequency external connection electrode positioned within a via hole

Semiconductor device having a high frequency electrode positioned with a via hole

A semiconductor device with a structure having superior heat sink characteristics. A first heat sink member is located over a wiring board by using an adhesive material. A semiconductor element is stuck over the first heat sink member by using an adhesive material. The semiconductor element and electrodes located over the wiring board are connected by wires. A second heat sink member which covers the semiconductor element and the wires is joined to the first heat sink member by using a conductive adhesive material. The inside and outside of the second heat sink member are sealed by resin except a flat top thereof. By doing so, the semiconductor device is fabricated. Heat which is generated in the semiconductor element and which is transmitted to the first heat sink member is released from an edge portion of the first heat sink member. In addition, the heat which is generated in the semiconductor element and which is transmitted to the first heat sink member is transmitted to the conductive adhesive material and the second heat sink member and is released from the flat top of the second heat sink member.

Semiconductor device and method for fabricating the same

A method of design of a circuit board enabling high density conductor lines to be drawn efficiently. A rats nest is formed by connecting pads to which terminals of an electronic device are connected and external connection terminals by lines. A region with the highest density of lines of the rats nest is then selected and design rules relating to routes and dimensions of conductor lines are set in the region with the highest density of lines of the rats nest. Conductor lines are then laid at the region with the highest density of lines of the rats nest, and whether or not the conductor lines can be laid at the region with the highest density of lines of the rats nest is confirmed. Setting of the design rules and laying of conductor lines are if the conductor lines cannot be laid, and the conductor lines of the remaining regions are laid by the set design rules if the conductor lines can be laid.

Method of designing circuit board

A semiconductor device comprises a frame provided on a substrate to form a semiconductor-chip accommodating part on the substrate. A semiconductor chip is provided in the semiconductor-chip accommodating part. An organic insulating layer is provided to cover the semiconductor chip and the frame. A wiring layer is provided on the organic insulating layer. In the semiconductor device, the frame comprises gaps which are arranged in a longitudinal direction of the frame.

Semiconductor device and method of manufacturing the same

A server performs electronic commerce with a client by using a network. An order receiving unit of the server separates a sales article into information and goods and presents them as an ordering target to the client. An article providing unit of the server selects the separated information, separated goods, or a combination thereof on the basis of an ordering request from the client and provides it to the client. The article providing unit executes a time difference service for providing the separated goods after the separated information was precedently provided. The article providing unit provides a separation service for solely providing the separated information and the separated goods, respectively.

Electronic commerce method, recording medium storing electronic commerce program therein, and server

In a semiconductor device circuit formation surfaces of each of a plurality of semiconductor chips can be easily located at even level when the semiconductor chips are arranged side by side so that a process of forming rearrangement wiring is simplified. The semiconductor chips are mounted on a substrate via an adhesive layer in a two-dimensional arrangement. A resin layer is formed on the substrate and located around the semiconductor elements. The resin layer has the same thickness as a thickness of the semiconductor elements. An organic insulating layer is formed over a surface of the resin layer and circuit formation surfaces of the semiconductor elements. A rearrangement wiring layer is formed on the organic insulating layer and electrodes of the semiconductor chips. External connection terminals are electrically connected to the circuit formation surfaces of the semiconductor elements through wiring in the rearrangement wiring layer.

Semiconductor device configured to be surface mountable

A structure in which a phosphorus-nickel layer, a rich phosphorus nickel layer that contains phosphorus or boron higher than this phosphorus-nickel layer, a nickel-tin ally layer, a tin-rich tin alloy layer, and a tin alloy solder layer are formed in sequence on an electrode. Accordingly, adhesiveness between a metal pattern used as the electrode, the wiring, or the pad and the solder can be improved.

External connection terminal and semiconductor device

A contactor has a contactor substrate and a plurality of contact electrodes formed on the contactor substrate. Each contact electrode is formed by a metal wire bent between one end joined to the contactor substrate and the other end. An inclined plane is formed by a cutting surface. A fracture surface formed by a tension fracture is formed at the apex portion of the contact electrode.

Contactor, method for manufacturing such contactor, and testing method using such contactor

A semiconductor module includes a plurality of semiconductor devices each including a circuit substrate carrying thereon a single memory semiconductor chip and a socket for holding the semiconductor devices detachably.

Semiconductor module including a plurality of semiconductor devices detachably

A method of manufacturing a semiconductor device is provided. The method includes the steps of forming a wiring layer on an underlying metal film formed on a substrate, the wiring layer being electrically connected to an electrode pad formed on a substrate, removing a part of the wiring layer so as to form a wiring on the substrate, a part of the underlying metal film being exposed other than a part where the wiring is formed, removing the exposed part of the underlying metal film by using the wiring as a mask, forming a barrier metal film on the wiring so as to cover the wiring and the underlying metal film underneath the wiring, forming a post terminal by electroless plating so that the post terminal is electrically connected to said wiring and providing a sealing resin so as to cover said substrate except a position at which said post terminal is formed.

Semiconductor device manufacturing method having a step of forming a post terminal on a wiring by electroless plating

A semiconductor device including a semiconductor chip sealed with an encapsulating resin. Columnar electrodes are connected to electrode pads of the semiconductor chip, and extend through the encapsulating resin. The columnar electrodes are made from bonding wires and include enlarged outer ends. Solder balls are arranged on the surface of the encapsulating resin and connected to the outer ends of the columnar electrodes. In another example, pin wires are formed by half-cutting bonding wires, bonding one end of each of the bonding wires, and cutting the bonding wires at the half-cut portions.

Semiconductor device having columnar electrode and method of manufacturing same

A semiconductor device includes a resin package in which a semiconductor chip is sealed, the resin package having a first surface and a second surface opposite to the first surface; a plurality of leads having inner lead parts connected to the semiconductor chip and outer lead parts extending outside the resin package, the outer lead parts being bent along the shape of the resin package so as to form first terminal parts on the second surface and second terminal parts on the first surface; connection means electrically connecting the semiconductor chip and the leads; and a positioning mechanism provided either on the leads or on the resin package, which positions the outer lead parts by engaging a part of the outer lead parts to the resin package. Further, at least one of the leads and/or connection means is cut so as to electrically disconnect the semiconductor chip and the one of the leads and/or connection elements.

Apparatus for a vertically accumulable semiconductor device with external leads secured by a positioning mechanism

Growing community of inventors

Kawasaki, Japan

Tetsuya Fujisawa