Sony Corporation

Sony Group Corporation

Tetsuya Asayama

Masanori Hosomi

Hiroyuki Ohmori

Yutaka Higo

Hiroyuki Uchida

Kazuhiro Bessho

Kazutaka Yamane

Shinichi Kawano

Yuhei Taki

Hiroki Nagahama

Nobuhiro Kaneko

Tomohiro Katori

Yoshinori Oota

Katsuya Takahashi

Kuniyo Oishi

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Storage element and storage apparatus

A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Memory element, memory apparatus

A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Storage element

A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

Magnetic element

The present technology relates to an information processing device, an information processing method, and an information processing system that are capable of establish smooth and natural conversation with a person who has difficulty in hearing. The information processing device includes a sound acquisition unit that acquires sound information of a first user that is input to a sound input device and a display control unit that controls display of text information on a display device for a second user, the text information corresponding to the acquired sound information. The display control unit performs control related to display amount of the text information on the display device on the basis of at least one of the display amount of the text information on the display device or input amount of the sound information input through the sound input device.

Information processing device, information processing method, and information processing system

There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

Growing community of inventors

Tokyo, Japan

Tetsuya Asayama