Kabushiki Kaisha Toshiba

Tetsuya Amano

Maki Sato

Katsuya Kudo

Kazuki Hizu

Toyoharu Igarashi

Takehiko Hojo

Tomohiro Kobayashi

According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.

Solid state imaging device

According to one embodiment, a solid state imaging device includes an imaging unit that outputs imaging data by performing an imaging operation, a temperature sensor that outputs a diode voltage according to a diode current, and an output circuit that shares a part of a circuit with the imaging unit and outputs temperature data based on the diode voltage outputted from the temperature sensor in the same semiconductor chip.

A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.

Growing community of inventors

Chiba, Japan

Tetsuya Amano