Nippon Telegraph and Telephone Corporation

Tetsuya Akasaka

Naoki Kobayashi

Seigo Ando

Toshiki Makimoto

Kazuhide Kumakura

Tadashi Saitoh

Yasuyuki Kobayashi

Toshio Nishida

A nitride semiconductor structure of the present invention is obtained by growing an h- or t-BN thin film () and a wurtzite-structure AlGaN (x&#x3e;0) thin film () as buffer layers and forming a single-crystal wurtzite-structure AlGaInBN thin film () thereon. While GaN, AlGaN, AlN, and the like have the wurtzite structure with spbonds, h-BN or t-BN has the graphite structure with spbonds, and has a completely different crystal structure. Accordingly, it has heretofore not been considered that a wurtzite-structure AlGaInBN thin film can be grown on a graphite-structure h-BN thin film. However, when a wurtzite-structure AlGaN (x&#x3e;0) thin film () is formed as a buffer layer on a graphite-structure boron nitride thin film (), a wurtzite-structure AlGaInBN () nitride semiconductor structure such as GaN can be grown on the buffer layer.

Nitride semiconductor structure and method of preparing the same

A masking material, which includes stripe-like openingsparallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin filmsdoped with Mg are grown on the openingsby selective-area growth. The nitride semiconductor thin filmsare composed of a portionformed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portionformed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portionis made lower than that of the portion

Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device

Growing community of inventors

Atsugi, Japan

Tetsuya Akasaka