Sharp Kabushiki Kaisha Corporation

Sekisui Chemical Co., Ltd.

Tetsuya Aita

Takeshi Hara

Michiko Takei

Yoshiyuki Harumoto

Hirohiko Nishiki

Yoshimasa Chikama

Masahiko Suzuki

Okifumi Nakagawa

Tohru Okabe

Yoshifumi Ohta

Tsuyoshi Inoue

Takeshi Yaneda

Yuuji Mizuno

Go Mori

Kazuo Nakagawa

Hisao Ochi

Yoshiki Nakatani

Akinobu Hayakawa

Takeharu Morita

Naohiro Fujinuma

Yoshifumi Ota

Tomohito Uno

Tetsuya Kurebayashi

Junichiro Anzai

Motohiko Asano

Yuuichirou Fukumoto

Yoshiyuki Miyajima

Yuya Nakano

Kenichi Yamashita

Kimihiko Yamada

Yuuiji Mizuno

Mayumi Yukawa

The present invention aims to provide a solar cell having high durability against deterioration due to moisture ingress from the side surfaces. The solar cellof the present invention includes: first and second electrodesand; a perovskite layerprovided between the first and second electrodesandand containing an organic-inorganic perovskite compound (A) represented by the formula RMXwhere R is an organic molecule, M is a metal atom, and X is a halogen atom; and a side-surface-protecting layerprovided on a peripheral side of the perovskite layerto coat at least part of a side surface of the perovskite layer, the side-surface-protecting layercontaining at least one selected from the group consisting of a metal halide (B1) and an organometal halide (B2) or containing an organohalide (C).

Solar cell and method for producing same

An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines () extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (), one for each of the pixels, a protective film () covering the TFTs (), a plurality of pixel electrodes () arranged in a matrix on the protective film () and connected to the respective corresponding TFTs (), and a plurality of auxiliary capacitors (), one for each of the pixels. Each of the auxiliary capacitors () includes the corresponding capacitor line (), the corresponding pixel electrode (), and the protective film () between the corresponding capacitor line () and the corresponding pixel electrode ().

Active matrix substrate and liquid crystal display panel including the same, and method for manufacturing active matrix substrate with gate insulating film not provided where auxiliary capacitor is provided

An active matrix substrate () includes a gate electrode () formed on an insulating substrate (), and a planarizing film () formed on the gate electrode () and made of a baked SOG material. The gate electrode () is a multilayer film including a first conductive film () formed on the insulating substrate () and made of a metal except copper, a second conductive film () formed on the first conductive film () and made of copper, and a third conductive film () formed on the second conductive film () and made of the metal except copper.

Active matrix substrate, and display panel

The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device

The present invention provides a thin film transistor including an oxide semiconductor layer () for electrically connecting a signal electrode () and a drain electrode (), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer () made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer () being in touch with the signal electrode () and the oxide semiconductor layer () and separating the signal electrode () from the oxide semiconductor layer (). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.

Thin film transistor, method for manufacturing same, active matrix substrate, display panel and display device

The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01&#x2266;Zn/(In+Zn)&#x2266;0.22.

Oxide semiconductor including Ga, In, Zn, and O and A thin film transistor and a display with the oxide semiconductor including Ga, In, Zn, and O

An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer () with energy, thereby obtaining a microcrystalline silicon layer; and forming a doped semiconductor layer () on the amorphous silicon layer (). In the step of irradiating, the amorphous silicon layer () is irradiated with energy that has a first quantity, thereby forming a first microcrystalline silicon layer (A) including a channel layer for a first TFT (A), and is also irradiated with energy that has a second quantity, which is larger than the first quantity, thereby forming a second microcrystalline silicon layer (B) including a channel layer for a second TFT (B).

Method for manufacturing semiconductor device, semiconductor device, and display device

A semiconductor device includes: a thin film transistor having a gate line (), a first insulating film (), an island-shaped oxide semiconductor layer (), a second insulating film (), a source line (), a drain electrode (), and a passivation film; and a terminal portion having a first connecting portion () made of the same conductive film as the gate line, a second connecting portion () made of the same conductive film as the source line and the drain electrode, and a third connecting portion () formed on the second connecting portion. The second connecting portion is in contact with the first connecting portion within a first opening () provided in the first and second insulating films; the third connecting portion () is in contact with the second connecting portion within a second opening () provided in the passivation film; and the second connecting portion () covers end faces of the first and second insulating films within the first opening (), but does not cover an end face of the passivation film () within the second opening (). As a result, the taper shape of a contact hole of the terminal portion can be controlled with a high precision.

Semiconductor device and method for producing same

A method for manufacturing a display deviceincludes a substrate supporting step for supporting a plastic substrateon a support substrate, with the plastic substratecurved, and a thin film lamination step for laminating a plurality of thin films on the plastic substratesupported on the support substrate

Method for manufacturing display device and display device

The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistoraccording to the present invention has a gate electrodeformed on a substrate, an insulating layerformed on the gate electrode, a microcrystalline amorphous silicon layerand an amorphous silicon layerthat are formed on the insulating layer, a semiconductor layercontaining an impurity formed on the amorphous silicon layer, and a source electrodeA and a drain electrodeB that are formed on the semiconductor layercontaining an impurity. The microcrystalline amorphous silicon layerand the semiconductor layercontaining an impurity are connected to each other through the amorphous silicon layerwithout being in direct contact with each other.

Thin film transistor, display device, and manufacturing method for thin film transistor and display device

Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer () that contains a channel region (C) having a microcrystalline semiconductor; source and drain contact layers (S andD) that contains impurities; a first source metal layer (S) and a first drain metal layer (D), and a second source metal layer (S) and a second drain metal layer (D). The end portion of the second metal source layer (S) is located at a position receded from the end portion of the first metal source layer (S) and the end portion of the second drain metal layer (D) is located at a position receded from the end portion of the first drain metal layer (D). The semiconductor layer () contains low concentration impurity diffusion regions formed near the end portions of the aforementioned source contact layer (S) and drain contact layer (D).

Thin-film transistor, display device, and manufacturing method for thin-film transistors

An active matrix substrate includes a first substrate, a driving integrated circuit chip mounted on the first substrate with an anisotropic electrically conductive layer, and an insulating member. The insulating member isolates a terminal from a wiring and a bump electrode that are adjacent to the terminal portion and isolates a bump electrode facing the terminal portion from a bump electrode and a wiring that are adjacent to the bump electrode.

Wiring substrate and display device including the same

An electrode connection structure including a first circuit component including a resin plate, a barrier film stacked on a surface of the resin plate, a circuit section formed on the barrier film and a first electrode provided on the surface of the resin plate on which the barrier film is stacked, and a second circuit component arranged to face the first circuit component and having a second electrode facing the first electrode, wherein the first and second electrodes are electrically connected via pressure applied thereto in the directions approaching each other and a portion of the barrier film surrounding the first electrode is at least partially removed from the surface of the resin plate.

Circuit component, electrode connection structure and display device including the same

A flexible substrate storage equipment of the present invention includes at least a pair of opposed members that constitute an outer frame of a storage equipment main body, wherein the pair of opposed members are disposed so as to maintain a predetermined interval to wedge a plurality of flexible substrates in between to hold them in a shape of a curve. As a result, a flexible substrate storage equipment for surely storing and holding a plastic substrate or other flexible substrate with a simple structure, and a storing method of such substrate can be realized.

Growing community of inventors

Osaka, Japan

Tetsuya Aita