Shindengen Electric Manufacturing Company Limited

Tetsuto Inoue

Shunichi Nakamura

Akihiko Sugai

Teppei Takahashi

Takashi Mochizuki

A semiconductor device has: a semiconductor substrate; a drift layer of a first conductivity type; a well region of a second conductivity type; a high-concentration region of the second conductivity type, a source region of the first conductivity type; an insulating film provided on the drift layer; a first contact metal film in contact with the source region and the high-concentration region through a first opening provided in the insulating film; and a second contact metal film formed on a surface of the first contact metal film and contacting the high-concentration region through a second opening provided in the first contact metal film; a source electrode film formed on a surface of a contact metal layer including the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.

Method of manufacturing semiconductor device and semiconductor device

A silicon carbide semiconductor device includes: n type regions formed on a surface of the ntype epitaxial layer; p type body regions formed at positions deeper than the n type regions; ptype channel regions each reaching the p type body region; and ntype source regions formed toward the p type body region from the front surface side of the epitaxial layer, and the ptype channel regions and the ntype source regions are formed at a planar position where the n type region remains between the ptype channel region and the ntype source region, and out of boundary surfaces which are formed between the ptype channel region and the n type regions, the boundary surface on an outer peripheral side is positioned inside an outer peripheral surfaceof the p type body region as viewed in a plan view.

Silicon carbide semiconductor device and method of manufacturing the same

A silicon carbide semiconductor device includes: n type regions formed on a surface of the n&#x2212; type epitaxial layer; p type body regions formed at positions deeper than the n type regions; p&#x2212; type channel regions each reaching the p type body region; and n++ type source regions formed toward the p type body region from the front surface side of the epitaxial layer, and the p&#x2212; type channel regions and the n++ type source regions are formed at a planar position where the n type region remains between the p&#x2212; type channel region and the n++ type source region, and out of boundary surfaces which are formed between the p&#x2212; type channel region and the n type regions, the boundary surface on an outer peripheral side is positioned inside an outer peripheral surfaceof the p type body region as viewed in a plan view.

Method of manufacturing a silicon carbide semiconductor device

A semiconductor device includes an element portion and a gate pad portion on the same wide gap semiconductor substrate. The element portion includes a first trench structure having a plurality of first protective trenches and first buried layers formed deeper than gate trenches. The gate pad portion includes a second trench structure having a plurality of second protective trenches and second buried layers. The second trench structure is either one of a structure where the second trench structure includes: a p-type second semiconductor region and a second buried layer made of a conductor or a structure where the second trench structure includes a second buried layer formed of a metal layer which forms a Schottky contact. The second buried layer is electrically connected with the source electrode layer.

Semiconductor device and method of manufacturing semiconductor device

A silicon carbide semiconductor device includes a silicon carbide layerof a first conductivity type, a silicon carbide layerof a second conductivity type, a gate trench, a gate electrodeprovided in the gate trench, and a protection trenchformed to a depth greater than the gate trench. A region in the horizontal direction that includes both the gate trenchand a protection trenchthat surrounds the gate trenchwith at least a part of the gate trenchleft unenclosed is a cell region, and a region in the horizontal direction that includes a protection trenchand in which a gate pador a lead electrode connected to the gate pad is disposed is a gate region.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device

A silicon carbide semiconductor device includes a silicon carbide layerof a first conductivity type, a silicon carbide layerof a second conductivity type, a gate trench, a gate electrodeprovided in the gate trench, and a protection trenchformed to a greater depth than the gate trench. A region in the horizontal direction that includes both the gate trenchand a protection trenchthat surrounds only a part of the gate trenchin the horizontal direction is a cell region, and a region in the horizontal direction that includes a protection trenchand in which a gate pador a lead electrode connected to the gate padis disposed is a gate region.

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Saitama, Japan

Tetsuto Inoue