Canon Kabushiki Kaisha

Tetsushi Yamamoto

Tadahiko Hirai

Jun Kato

Ryo Natori

Shunji Imanaga

To provide a method for producing a particle that can suppress non-specific adsorption without using BSA. A method for producing a particle, including: a first step of mixing a radically polymerizable monomer, an organic silane compound having a silicon atom to which an alkoxy group is bonded and having radical polymerizability, a radical polymerization initiator, a water-soluble polymer, and an aqueous medium to prepare an emulsion; and a second step of adding a specific reactive compound after the first step.

Particle and method for producing particle

Provided are a nanoparticle/dispersant complex having excellent dispersibility and long-term stability in a dispersion medium, a production method therefor, and a nanoparticle dispersion liquid and a nanoparticle/matrix-material complex which are colorless and transparent even at high concentrations. In the nanoparticle/dispersant complex, a nanoparticle is covered with a dispersant containing a heterocyclic cationic group and one of an oxo acid group containing a sulfur atom or a phosphorus atom and an anion moiety of the oxo acid group; in the nanoparticle dispersion liquid, the nanoparticle/dispersant complex is dispersed into a dispersion medium; in the nanoparticle/matrix-material complex, the nanoparticle/dispersant complex is dispersed into a matrix material; and the production method for a nanoparticle/dispersant complex comprises forming, under a presence of the dispersant, a nanoparticle covered with the dispersant from a nanoparticle precursor.

Nanoparticle/dispersant complex, nanoparticle dispersion liquid, and nanoparticle/matrix-material complex

A method for producing ytterbium phosphate fine particles includes adding phosphoric acid and water to an anhydrous ytterbium halide to cause a reaction between the anhydrous ytterbium halide and the phosphoric acid.

Method for producing ytterbium phosphate fine particles

A sensor includes a first gate electrode, a second gate electrode, a semiconductor layer, a gate-insulating layer, a source electrode, a drain electrode, and a sensing portion including an accommodating part and a receiving layer. The first and second gate electrodes are opposed to each other with the sensing portion, the semiconductor layer, and the gate-insulating layer therebetween. One surface of the semiconductor layer is in contact with a surface of the sensing portion, and another surface of the semiconductor layer is in contact with the gate-insulating layer. A surface of the gate-insulating layer is in contact with the second gate electrode. The first gate electrode and the receiving layer are opposed to each other with the accommodating part therebetween. The source and drain electrodes are in contact with the semiconductor layer.

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Tokyo, Japan

Tetsushi Yamamoto