Nippon Telegraph and Telephone Public Corporation

Tetsushi Sakai

Hironori Yamauchi

Yoshinobu Arita

Yoshizi Kobayasi

Junichi Murota

Yousuke Yamamoto

Masaru Asano

Yoshio Sunohara

Yutaka Sakakibara

Yoshiji Kobayasi

Tsutomu Wada

In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.

Bipolar transistors

Bipolar transistors having vertically arrayed collector-base-emitter

In a semiconductor device such as a bipolar transistor and a field effect transistor of the type having a substrate, a doped polycrystalline silicon region selectively formed on the substrate and an insulating film overlying the polycrystalline silicon region, the region is shaped as mesa having side surfaces with a negative coefficient of gradient between the substrate and the top of the mesa.

Method of making semiconductor devices

The semiconductor device comprises a semiconductor substrate, a polycrystalline silicon semiconductor body extending upwardly from a portion of the surface of the semiconductor substrate and containing an impurity at a substantially uniform concentration, and a metal electrode disposed on the top surface of the polycrystalline silicon semiconductor body. The metal electrode extends in the lateral direction beyond the periphery of the top surface of the polycrystalline silicon semiconductor body.

Semiconductor devices and method of manufacturing the same

Inverted frustum shaped polycrystalline semiconductor layers are formed on the emitter and collector regions provided on one surface of a semiconductor substrate, and conductor layers are applied on the upper surfaces of the polycrystalline semiconductor surfaces to form emitter and collector electrodes thus providing a bipolar transistor for the integrated circuit device.

Semiconductor integrated circuit devices having inverted frustum-shape

In an insulated gate type field effect transistor comprising spaced source and drain regions, an insulating film between the source and drain regions and a gate electrode mounted on the insulating film, an inverted frustum shaped polycrystalline semiconductor layer is formed on the insulating film and the gate electrode is mounted on the polycrystalline semiconductor layer.

Growing community of inventors

Sayama, Japan

Tetsushi Sakai