Sharp Kabushiki Kaisha Corporation

Tetsuroh Murakami

Hiroshi Nakatsu

Takahisa Kurahashi

Hiroyuki Hosoba

Shouichi Ohyama

Kazuaki Sasaki

Junichi Nakamura

Yukari Inoguchi

Eiji Kametani

Nobuyuki Watanabe

Shouichi Ooyama

Shouici Ooyama

A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layerincluding an AlGaInP active layer and a second waferwhich transmits light derived from the active layer. The crystal axes of the epitaxial layerand the second waferare generally aligned with each other and are in the range of &#x2212;15&#xb0; to +15&#xb0; with respect to a lateral face {} of the second wafer. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.

Semiconductor light emitting device and manufacturing method therefor

A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlGaAs layer and the active layer, in this order. Part of the AlGaAs layer with respect to the is changed into an AlOlayer (where y is a positive real number).

Method of manufacturing a semiconductor light-emitting device

A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-side electrode formed on the n-type cladding layer side. The p-type cladding layer consists of a first p-type cladding layer positioned closer to the light-emitting layer and having a lower aluminum content and a lower impurity concentration, and a second p-type cladding layer positioned less closer to the light-emitting layer and having a higher aluminum content and a higher impurity concentration. The LED also has a current blocking layer below the p-side electrode for locally blocking electric current flowing from the p-side electrode to the n-side electrode.

Light emitting diode

A light emitting diode having, at least, an AlGaInP light emitting layer and a transparent electrode, wherein the transparent electrode is made of a ZnO film doped with a group III element or a compound thereof.

A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an Al Ga As layer and the active layer, in this order. Part of the Al Ga As layer with respect to the is changed into an AlO layer (where y is a positive real number).

Semiconductor light-emitting device and manufacturing method therefor, and LED lamp and LED display

In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is composed of a Ga In P well layer and a pair of (Al Ga ) In P barrier layers, which sandwiches the Ga In P well layer therebetween. The impurity concentration of the (Al Ga ) In P barrier layers is higher than that of the Ga In P well layer. For example, the impurity concentration of the Ga In P well layer is set to 2&times;10 cm , while the impurity concentration of the (Al Ga ) In P barrier layers is set to 2&times;10 cm .

Light emitting element with multiple multi-layer reflectors and a barrier layers

A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a &lsqb;011&rsqb; orientation; a first buffer layer of Al Ga As (0&lE;x&lE;1) provided on the principal plane of the GaAs substrate; a second buffer layer of Al Ga In P (0&lE;y&lE;1 and 0&lE;z&lE;1) provided on the first buffer layer; a first cladding layer of Al Ga In P (0&lE;s&lE;1 and 0&lE;t&lE;1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.

Semiconductor light emitting device

A light emitting diode includes a substrate, a light emitting layer, a first cladding layer having a first conductivity type and an energy gap greater than an energy gap of the light emitting layer, a second cladding layer having a second conductivity type and an energy gap greater than an energy gap of the light emitting layer, and an intermediate barrier layer having the same conductivity type as the conductivity type of the light emitting layer but different from the conductivity type of the first or second cladding layer, and having an energy gap less than the energy gap of the first or second cladding layer but greater than the energy gap of the light emitting layer. The light emitting diode has a double heterostructure such that the light emitting layer is interposed between the first and second cladding layer. The intermediate barrier layer is disposed between the light emitting layer and the first cladding layer and/or between the light emitting layer and the second cladding layer.

Growing community of inventors

Tenri, Japan

Tetsuroh Murakami