Socionext Inc.

Fujitsu Semiconductor Memory Solution Limited

Tetsuro Tamura

A resistive random access memory includes a memory cell including a resistive element having a resistance which varies according to a write operation and stores data according to the resistance of the resistive element, a reference resistive element having a resistance set to a first value, a voltage line set to a first voltage during a first write operation in which the resistance of the resistive element is varied from a second value higher than the first value to the first value, and a voltage control circuit arranged between first ends of the two resistive elements. The voltage control circuit adjusts a value of the first voltage supplied from the voltage line so as to reduce a difference between currents flowing through the two resistive elements during the first write operation, and supply the adjusted first voltage to the first ends of the two resistive elements.

Resistive random access memory, and method for manufacturing resistive random access memory

A plurality of latch circuits driven at rising of a clock signal and a plurality of latch circuits driven at falling of the clock signal are alternately connected, and generation circuit generates a plurality of frequency divided clock signals with different phases based on combinations of levels of outputs of the plurality of latch circuits.

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Yokohama, Japan

Tetsuro Tamura