Tokyo Electron Limited

Tokyo Electron Limi Ted

Tetsuro Takahashi

Shuuichi Ishizuka

Masaru Sasaki

Koji Maekawa

Satoshi Toda

Yoshihiro Sato

Shuji Moriya

Nobuhiro Takahashi

Hiroyuki Takahashi

Noriyuki Iwabuchi

Junichiro Matsunaga

Kazunori Kazama

Hiroshi Kobayashi

Yoshinori Osaki

Masashi Matsumoto

Jiro Katsuki

Tomoe Nakayama

A predetermined process is performed on two target substrates using a substrate processing device that includes two processing parts for performing a substrate process on each of the two target substrates, a gas supply mechanism for separately supplying gases to the two processing parts, and a common exhaust mechanism for collectively exhausting the gases inside the two processing parts. A first mode is executed in which an HF gas and an NHgas are supplied to one of the two processing parts, and the HF gas is not supplied to the other of the two processing parts. Subsequently, a second mode is executed in which the HF gas and the NHgas are supplied to the two processing parts under the same gas conditions. In the first mode, a pressure difference is prevented from occurring between the two processing parts.

Substrate processing method and substrate processing device

There is provided a substrate processing apparatus of performing a predetermined substrate process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts each configured to perform the substrate process on each of the plurality of target substrates; a gas supply mechanism configured to supply a processing gas to each of the plurality of processing parts; a single exhaust mechanism configured to exhaust the processing gas within the plurality of processing parts; and a control part configured to control the single exhaust mechanism to collectively exhaust the processing gas within the plurality of processing parts, and control the gas supply mechanism to separately supply the processing gas into each of the plurality of processing parts such that a difference between internal pressures of the plurality of processing parts is prevented.

Substrate processing apparatus, substrate processing method and storage medium

An etching method includes loading a target substrate W into a chamber, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an Ogas into the chamber, while at least the Ogas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the Ogas.

Etching method

In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.

Process chamber cleaning method in substrate processing apparatus, substrate processing apparatus, and substrate processing method

In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.

Insulating film forming method and substrate processing method

A plasma surface treatment method for performing a surface treatment on a quartz member used under a plasma-exposed environment by using a plasma having an ion energy greater than about 5.3 eV. The plasma has, near a surface of the quartz member, an electron temperature higher than or equal to about 2 eV. Further, in a plasma processing apparatus for generating a plasma by introducing a microwave into a processing chamber through a planar antenna having a plurality of slots, the surface treatment is carried out for about 30-300 seconds by using a plasma of a processing gas containing Ar gas and Ngas under conditions of a processing pressure lower than or equal to about 15 Pa and a microwave power higher than or equal to about 0.9 W/cm, the surface treatment being repeated 25 to 2000 times.

Plasma surface treatment method, quartz member, plasma processing apparatus and plasma processing method

The total film thickness TN of silicon oxynitride film and silicon oxide film remaining as its underlying layer is measured. A measurement target substrate is re-oxidized, and, after the re-oxidization, the total film thickness (TN) of the silicon oxynitride film, silicon oxide film and silicon oxide film resulting from the re-oxidization on the target substrate is measured. Separately, a reference substrate provided with silicon oxide film is re-oxidized, and, after the re-oxidization, the total film thickness Tof the silicon oxide film and silicon oxide film resulting from the re-oxidization on the reference substrate is measured. Re-oxidization rate reduction ratio RORR of the measurement target substrate is calculated by the following formula (1) from the values of total film thicknesses TN, TN and T. The nitrogen concentration of the silicon oxynitride film of the target substrate is determined from the calculated re-oxidization rate reduction ratio RORR. RORR (%)={(TTN)/(TTN)}&#xd7;100 (1).

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Nirasaki, Japan

Tetsuro Takahashi