Canon Kabushiki Kaisha

Factory Inc.

Tetsuro Saito

Tatsumi Shoji

Shoji Nishida

Takehito Yoshino

Masaki Mizutani

Masaaki Iwane

Noritaka Ukiyo

Katsumi Nakagawa

Tadashi Mihara

Sunao Mori

Makoto Iwakami

Chikako Tsujita

Kazunori Katakura

Kazuya Ishiwata

Yuichi Masaki

Akihiko Komura

Yuko Yokoyama

Yoshinori Shimamura

Yoichi Fukumiya

Hideo Mori

Masanori Takahashi

Toshifumi Yoshioka

Kenji Niibori

Toshimichi Ouchi

Masaki Sunaga

Issei Yonemoto

A lighting fixture varies a beam angle of light emitted by a light source and a beam angle of light to the exterior to provide excellent visual effect by indirect lighting, high in serviceability and safety, and applicable to a wide range of purposes. The lighting fixture comprises a lighting fixture body of substantially L-shaped cross-section, a light source constituting a light radiation unit, a first reflector, a second reflector, and an opening constituting an illumination port. The light source is installed at an innermost center region of the vertical lightguide section to face into the vertical lightguide section. The first reflector is installed obliquely near one corner of the vertical lightguide section and the lateral lightguide section. The second reflector is obliquely installed near an endmost corner of the lateral lightguide section to face the first reflector.

Illuminating instrument

An emitting apparatushas a gas cluster generation chamberand a nozzleas means for generating a gas cluster and emitting the gas cluster to a processing object. A group of gas clusters jetted from the nozzleis shaped into a gas cluster streamin a beam form when passing through a skimmer. Electrons are emitted from an electron gunto the gas cluster stream, whereby the gas cluster in the gas cluster stream is ionized.

Gas cluster ion beam emitting apparatus and method for ionization of gas cluster

In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

Liquid phase growth process, liquid phase growth system and substrate member production method

A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same

An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

Apparatus for producing semiconductor thin films on moving substrates

A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

Liquid-phase growth process and liquid-phase growth apparatus

A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

Liquid phase growth method and liquid phase growth apparatus

Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.

Liquid phase growth methods and liquid phase growth apparatus

A method for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

Method for producing semiconductor thin films on moving substrates

A liquid crystal device, comprising: a pair of substrates each provided with an electrode including one substrate having thereon a color filter and a coating layer, and a liquid crystal layer comprising a chiral smectic liquid crystal disposed together with spacer beads between the pair of substrates, wherein the liquid crystal layer has a thickness smaller than a diameter of the spacer beads and a maximum thickness of the coating layer, the coating layer having a pencil hardness of at most 7 H. The above layer structure between the substrates is effective in improving resistance to external shock and providing a uniform cell gap.

LCD having particular align direction with respect to a light-interrupting layer

Liquid crystal device, process for producing same and liquid crystal

A liquid crystal device is constituted by a pair of oppositely disposed substrates each provided with a plurality of electrodes and a chiral smectic liquid crystal disposed so as to fill a prescribed gap between the substrates together with a plurality of spacers dispersed therein. The substrates includes a substrate having four sides at least one of which has a connecting portion to be connected with a drive circuit supplying a voltage to associated electrodes. The prescribed gap is decreased with an increasing distance from the connecting portion, whereby an uneven temperature distribution within the device resulting from heat generation in the vicinity of the connecting portion for the drive circuit can be alleviated or minimized to improve a display irregularity.

Wedge shaped LCD with change in dispersion density of spacers

A process for producing a liquid crystal device, including the steps of: providing a pair of electrode plates; disposing a sealing agent on at least one of the electrode plates so as to define a region to be filled with a liquid crystal; dispersing adhesive beads over at least one of the electrode plates; adhesively bonding the electrode plates to each other by curing the sealing agent and the adhesive beads under heating and pressure of the electrode plates. In the adhesively bonding step, the pair of electrode plates are provided with at least one heating member capable of setting a prescribed heating temperature for every prescribed region so as to cure the sealing agent and the adhesive beads. The above heating member is effective in improving an adhesive strength of the adhesive beads resulting in a good shock resistance of the resultant liquid crystal device and shortening a curing treatment time of the sealing agent.

Process for producing liquid crystal device

A circuit assembly suitable for constituting, e.g., a liquid crystal display device, is constituted by a transparent first substrate having thereon a plurality of first electrodes, and a second substrate having thereon a plurality of second electrodes and at least partially superposed with the first substrate so that the mutually corresponding first and second electrodes are superposed and electrically connected with each other. The first electrode has a light-transmissive layer and an opaque layer laminated with the light transmissive layer, and a portion of the first electrode superposed with the second substrate at least partially includes a light-transmissive portion. The first or second substrate has an alignment mark at a position thereof corresponding to the light-transmissive portion of the first electrode. The first substrate may for example be combined with another first substrate so as to sandwich a liquid crystal therebetween to form a liquid crystal device. The second substrate may carry a semiconductor IC chip for supplying drive signals to the liquid crystal device.

Growing community of inventors

Kanagawa, Japan

Tetsuro Saito