Canon Anelva Corporation

Tetsuro Ogata

Eisaku Watanabe

Franck Ernult

When a film is formed by using a sputter method, distribution variation due to a progress of target erosion generated during the film formation is suppressed, and film thickness distribution and resistance value distribution are corrected to an optimal state. In order to maintain the magnetic flux density formed on the target surface at a constant level, the distance between the target surface and the magnet surface (MT distance) is corrected in accordance with the progress of the target erosion. Further, two or more MT distances are set by a process recipe or the like while forming a thin film, and different distribution shapes are combined to form a near flat distribution shape.

Magnetic field control for uniform film thickness distribution in sputter apparatus

The present invention provides a method for manufacturing a semiconductor memory element including a chalcogenide material layer and an electrode layer, each having an improved adhesion, and a sputtering apparatus thereof. One embodiment of the present invention is the method for manufacturing a semiconductor memory element including: a first step of forming the chalcogenide material layer (); and a second step of forming a second electrode layer () on the chalcogenide material layer () by sputtering through the use of a mixed gas of a reactive gas and an inert gas, while applying a cathode voltage to a target. In the second step, introduction of the reactive gas is carried out at a flow rate ratio included in a hysteresis area () appearing in the relationship between a cathode voltage applied to the cathode and the flow rate ratio of the reactive gas in the mixed gas.

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Chofu, Japan

Tetsuro Ogata