Mitsubishi Denki Kabushiki Kaisha

Mitsushita Denki Kabushiki Kaisha

Tetsuro Makita

Tsuyoshi Horikawa

Akimasa Yuuki

Takaaki Kawahara

Mikio Yamamuka

Teruo Shibano

Takeharu Kuroiwa

Noboru Mikami

Koichi A Ono

Tomonori Okudaira

Hayato Takasago

Kenichi Niki

Yoshikazu Tsunemine

Kohei Adachi

Hideaki Otsuki

Tsuyosi Horikawa

A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.

Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium

Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium

A semiconductor memory device achieves a high capacitance value even when the elements are made extremely small as the degree of integration is increased. A method of producing such a semiconductor memory maintains a high capacitance value while achieving increased integration. A semiconductor memory device includes adjacent capacitor lower electrodes which are separated by a width of 0.2 &mgr;m while the ratio of the capacitor lower electrode height to the separation width is 1, the capacitor upper electrode covers the capacitor insulation film, and steps generated in the separated portion of the capacitor lower electrodes are filled by the upper electrode material. A method of manufacturing produces a semiconductor memory device wherein the capacitor upper electrode is formed in plasma which includes etchable gas by chemical or physical action.

Semiconductor memory device and method for producing the same

There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

High dielectric constant thin film structure, method for forming high

An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) includes a material container for containing a liquid CVD source material; a material feeder for feeding the liquid CVD source material from the material container to a vaporizer while keeping the CVD source material liquid; a vaporizer for vaporizing the liquid CVD source material fed from the material feeder by heating the liquid CVD source material to a high temperature to form a CVD source material gas; a reaction chamber connected to the vaporizer by a pipe for forming a thin film on a substrate using the CVD source material gas; and a thermostatic box surrounding the reaction chamber, wherein both of the vaporizer and piping connecting the vaporizer to the reaction chamber are located within the thermostatic box.

Chemical vapor deposition apparatus

A thin film capacitor structure of a random access memory includes plurality of capacitors formed on an interlayer insulating film. The capacitor structure includes a plurality of lower electrodes formed on the interlayer insulating film, a first dielectric film formed over the plurality of lower electrodes and portions of the interlayer insulating film between lower electrodes, a second dielectric film formed on the first dielectric film, and an upper electrode formed on the second dielectric layer. A silicon oxide film is formed at the step portions of the first dielectric film which result at the periphery of the lower electrodes to prevent leakage current between adjacent capacitors.

Semiconductor capacitor

A method of depositing a thin film on a substrate by chemical vapor deposition (CVD) including feeding a liquid CVD source material, including a solution in which at least one organometallic complex is dissolved in a solvent, at a constant flow rate to a vaporizer while keeping the CVD source material in a liquid state; vaporizing the liquid CVD source material by heating to form a CVD source material gas; and forming a thin film of a metal oxide on a substrate using the CVD material source gas in a reaction chamber, the thin film including at least titanium, including using TTIP and TiO(Dpm).sub.2 together as the organometallic complex.

Apparatus for and method of forming thin film by chemical vapor

A semiconductor device includes a semiconductor substrate having a major surface; a first interlayer insulating film formed on the semiconductor substrate and having an opening defined therein so as to open at the major surface of the semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening; a lower capacitor electrode connected electrically with the major surface of the semiconductor substrate through the connecting member; a capacitor dielectric film formed on the lower capacitor electrode; an upper capacitor electrode formed on the capacitor dielectric film; and a second interlayer insulating film formed on the capacitor upper electrode. The lower capacitor electrode referred to above is made of a principal component selected from the group consisting of ruthenium and iridium and contains oxygen in a quantity of 0.001 to 0.1% by atom and/or at least one impurity element in a quantity of 0.1 to 5% by atom. The impurity element is selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum.

Semiconductor device having a capacitor electrode formed of iridum or

In a thin film capacitor of a random access memory including a lower electrode, a dielectric film and an upper electrode, generation of defects in the dielectric film is suppressed. In another way, impurity diffusion into the dielectric film is prevented. In still another way, lattice matching of the dielectric film and the electrodes is realized. Thus, a reduced dielectric constant of the capacitor is prevented, and a quality of the semiconductor device is increased.

Semiconductor device with x-ray absorption layer

High dielectric constant thin film structure method for forming high

A chemical vapor deposition (CVD) apparatus for depositing a thin film on a substrate by CVD has a material container for containing a liquid CVD source material, a material feeder for feeding the liquid CVD source material to a vaporizer for vaporizing the liquid CVD source material, and a reaction chamber for forming the thin film on the substrate using the CVD source material gas. Both the vaporizer and piping between the vaporizer and the reaction chamber are located in a thermostatic box surrounding the reaction chamber. Thus, the structure of the apparatus is simplified and also the heat efficiency of the apparatus is improved.

Apparatus for forming thin film by chemical vapor deposition

In a liquid crystal display device with a drive circuit board connected to the peripheral portion of a liquid crystal display panel, the circuit board is disposed behind the liquid crystal display panel and also the circuit board is connected with the liquid crystal display panel by means of a connecting member in film form, whereby the liquid crystal display device is miniaturized and efficiency of the assembly work is improved. Further, the circuit board is made up of plural drive circuit modules of the same type whereby the efficiency in the assembly and inspection process is still improved.

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Tokyo, Japan

Tetsuro Makita