Ube Industries, Inc.

Tetsuro Kunisawa

Tetsuo Yamada

Keigo Nagao

Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer () capable of being etched by a specific chemical substance on the upper surface of a substrate (); a step of forming a sacrificial layer () made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode () on a region including the sacrificial layer; a step of forming the piezoelectric thin film () on a region including a part of the lower electrode; a step of forming an upper electrode () on a region including a part of the piezoelectric thin film; a step of forming via hole (), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space () for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the specific chemical substance through the via hole.

Growing community of inventors

Ube, Japan

Tetsuro Kunisawa