Murata Manufacturing Co., Ltd.

Tetsuro Harada

Takanori Uejima

Yuji Takematsu

Dai Nakagawa

Yutaka Sasaki

Naoya Matsumoto

Koji Furutani

Yuuki Fukuda

Motoji Tsuda

Norio Nakajima

Mitsunori Samata

Naoki Nakayama

Yoshiaki Sukemori

Katsunari Nakazawa

Masahide Takebe

Yoshiki Takada

Tomohiro Nagai

Ken Tonegawa

Sho Matsumoto

Akihiro Ochii

Kunihiro Koyama

Yuki Fukuda

Shoji Nagumo

Takako Sato

Minoru Iwanaga

Shou Matsumoto

Naoto Yamaguchi

Nobuyoshi Okuda

Masaki Kimura

Takahisa Toyomura

Hiroaki Takaoka

Hidehiro Takano

Koki Saito

Detection accuracy is improved with a reduced size. A radio-frequency module includes an antenna terminal, a signal input terminal, a signal output terminal, a mounting substrate, a chip inductor, and a directional coupler. The mounting substrate has a first major surface and a second major surface opposite to each other. The chip inductor is mounted on the first major surface of the mounting substrate. The chip inductor is provided in at least one of a transmitting path between the antenna terminal and the signal input terminal and a receiving path between the antenna terminal and the signal output terminal. The directional coupler is mounted on the second major surface of the mounting substrate, and at least part of the directional coupler is provided in the transmitting path.

Radio-frequency module and communication device

A high frequency module includes a mounting substrate, an inductor, and a plurality of electronic components. The inductor is arranged on the mounting substrate. The inductor is arranged in an inside of the mounting substrate and has a winding portion formed by winding a conductor portion a plurality of times in a thickness direction of the mounting substrate. A first ground layer is formed in a region that is on an inner side of an outer edge of the winding portion in plan view of the mounting substrate, and the first ground layer is arranged closest to the winding portion in the thickness direction of the mounting substrate among ground layers formed in the region in a plurality of ground layers. The first ground layer is overlapped with an inner region but is not overlapped with at least part of the winding portion in plan view of the mounting substrate.

High frequency module and communication device

A radio frequency module includes: a first mounting board having a first principal surface and a second principal surface; a second mounting board having a third principal surface facing the second principal surface and a fourth principal surface; a transmission filter having a first mounting surface facing the second principal surface and a first top surface; and a reception filter having a second mounting surface facing the third principal surface and a second top surface; wherein the transmission and reception filters overlap at least partially in a plan view of the first and second mounting boards, an output terminal of the transmission filter is arranged on the first top surface, an input terminal of the reception filter is arranged on the second top surface, and the output and input terminals are connected by a conductive member not routed through the first mounting board or the second mounting board.

Radio frequency module and communication device

A radio-frequency module includes: a transmitting circuit disposed on a mounting substrate to process a radio-frequency signal input from a transmission terminal and to output a resultant signal to a common terminal; a receiving circuit disposed on the mounting substrate to process a radio-frequency signal input from the common terminal and to output a resultant signal to a reception terminal; a first inductor included in a first transmitting circuit; and a bonding wire connected to the ground and bridging over the first inductor.

A radio-frequency module includes a mounting substrate having a first main surface and a second main surface on opposite sides of the mounting substrate; an external connection terminal arranged on the first main surface; and a first transmission power amplifier arranged on the first main surface. The first transmission power amplifier includes an amplifier first main surface closest to the first main surface, an amplifier second main surface that faces away from the amplifier first main surface, a first input-output electrode arranged on the amplifier first main surface and through which a radio-frequency signal input into the first transmission power amplifier or a radio-frequency signal output from the first transmission power amplifier is transmitted, and a first ground electrode arranged on the amplifier second main surface.

Radio-frequency module, transmission power amplifier, and communication apparatus

A radio frequency module is provided. A matching circuit includes an inductor which is connected in series to the power amplifier and is formed in a substrate. The substrate includes a ground layer, a low permittivity portion, and a high permittivity portion. The ground layer at least partially overlaps with a first input terminal of the low-noise amplifier in a plan view from a thickness direction of the substrate. The low permittivity portion at least partially overlaps with the first input terminal in a plan view from the thickness direction, and is provided between the first input terminal and the ground layer. The high permittivity portion is in contact with the inductor and has the permittivity greater than the permittivity of the low permittivity portion.

Radio frequency module

A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.

A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

In a high frequency module, a first band processing circuit, a second band processing circuit, and a third band processing circuit. The first band processing circuit is used at the same time as the third band processing circuit (D) when wireless communication is performed. A frequency of a harmonic of a first transmission signal of the first band processing circuit is included in a frequency band of a third reception signal of the third band processing circuit. The second band processing circuit is not used at the same time as the first band processing circuit and the third band processing circuit (D) when wireless communication is performed and is disposed between the first band processing circuit and the third band processing circuit in a plan view of the substrate.

A demultiplexing circuit () includes a band switch () and a first communication band phase adjustment circuit (). The band switch () includes a shared terminal (P) connected to a shared connection end (), a first selection target terminal (P) connected to a second signal end (), and a second selection target terminal (P) connected to a third signal end (). In the band switch (), the first selection target terminal (P) and the second selection target terminal (P) are selectively connected to the shared terminal (P) in response to the communication band to be transmitted. The first communication band phase adjustment circuit () is connected between a first signal end () and a predetermined position in a transmission path where the shared connection end () and the shared terminal (P) are connected.

Demultiplexing circuit

A radio-frequency circuit module includes a multilayer body and a surface-mount component mounted on a front surface of the multilayer body. The surface-mount component includes variable capacitance elements integrated therein. Inductors including conductor patterns are provided in the multilayer body. On a back surface of the multilayer body, a first external connection terminal and a second external connection terminal are sandwiched between ground connection terminals. Ground via-conductors connected to ground connection terminals extend to the front surface of the multilayer body. The ground via-conductors are connected to each other in a layer near the front surface by a ground connection conductor which extends in a direction perpendicular or substantially perpendicular to the extending direction.

Radio-frequency circuit module

A high frequency circuit module includes a variable inductance circuit portion and a reactance circuit portion. The variable inductance circuit portion is connected between an antenna port and ground. The variable reactance circuit is connected between the antenna port and a front-end port. The variable inductance circuit portion includes a first inductor, a second inductor, and a switch. The first inductor is connected between the antenna port and the ground. The second inductor and the switch are connected in series, and this series circuit is connected in parallel to the first inductor.

High frequency circuit module

In a variable capacitance module capable of achieving necessary variable capacitance ranges, a variable capacitance circuit includes a variable capacitance element and fixed capacitance elements. A first variable capacitance element and a first fixed capacitance element are connected in series, and the series circuit thereof and a second fixed capacitance element are connected in parallel. Accordingly, with reference to the capacitance of the second fixed capacitance element, the range of the combined capacitance of the variable capacitance circuit is provided by a step size of capacitance based on the combined capacitance of the variable capacitance element and the first fixed capacitance element. The first and second fixed capacitance elements are defined by inner-layer flat-plate electrodes in a laminated substrate, and the variable capacitance element is defined by an MEMS element mounted on a top surface of the laminated substrate.

Variable capacitance module and matching circuit module

A series resonance circuit defined by a series circuit including an inductor and a capacitor and a series resonance circuit defined by a series circuit including an inductor and a capacitor are connected in shunt to a signal line. A diode is disposed between the grounding end of the series resonance circuit and the ground, and a diode is disposed between the grounding end of the series resonance circuit and the ground. The connection point between the grounding end of the series resonance circuit and the diode is connected to the ground via a frequency shifting inductor in a conductive state at high frequency, and the connection point between the grounding end of the series resonance circuit and the diode is connected to the ground via a frequency shifting inductor in a conductive state at high frequency. A matching circuit defined by a multistage T-shape LCL circuit is disposed between the series resonance circuits.

Growing community of inventors

Otsu, Japan

Tetsuro Harada