Denso Corporation

Nippon Soken, Inc.

Tetsuo Yoshioka

Yukihiro Takeuchi

Kazuhiko Kano

Takahiko Yoshida

Yasuyuki Okuda

Makiko Sugiura

Toshimasa Yamamoto

Takao Iwaki

Kazuaki Watanabe

Kenji Fukumura

Tetsuo Fujii

Akira Ogawa

Yasushi Kohno

Hirofumi Higuchi

Hiroyuki Wado

Akihiko Teshigahara

Teruo Oda

Hisanaga Matsuoka

Takaaki Kawai

Yoshitaka Noda

Junji Ohara

Kunihiro Onoda

Hideaki Nishikawa

Kouichi Miyashita

Jyunya Nishida

Akinori Kanda

Yuhei Shimizu

Shuntaro Yamada

Takashige Nagao

Shinya Asai

In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.

Manufacturing method of semiconductor device with attached film

A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.

Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess

A capacitance type physical quantity sensor includes: a first substrate; and a second substrate bonded to the first substrate through an insulating film. The second substrate includes first and second groove portions at a place of the second substrate facing an end portion of the first and second support units formed on the first substrate on a side opposite to the movable unit. A part of the end portion of the first support unit protrudes over the first groove portion. A part of the end portion of the second support unit protrudes over the second groove portion.

SOI substrate, physical quantity sensor, SOI substrate manufacturing method, and physical quantity sensor manufacturing method

A concentration sensor device includes a sensor unit, a substrate, and a sedimentation limit unit. The sensor unit detects a concentration of a specific component contained in liquid. The substrate has a face to which the sensor unit is arranged. The sedimentation limit unit is integrally arranged with the sensor unit or arranged at an upstream side of the sensor unit in a flowing direction of the liquid. The sedimentation limit unit is configured to prevent sedimentation of a foreign object on the sensor unit. The sedimentation limit unit includes a piezoelectric element to vibrate when electricity is supplied so as to promote the foreign object to be separated from the sensor unit. The substrate has a recess recessed in a thickness direction of the substrate.

Concentration sensor device and concentration detecting method

A semiconductor device includes a molding resin layer and a semiconductor element encapsulated with the molding resin layer. The molding resin layer has an opening. A surface of the semiconductor element is partially exposed outside the molding resin layer through the opening. A groove is located in the surface of the semiconductor element around the opening of the molding resin layer. The groove is filled with the molding resin layer to produce anchor effect that enhances adhesive force of the molding resin layer to the surface of the semiconductor element around the opening.

Semiconductor device

An ultrasonic sensor includes an ultrasonic detecting element, an acoustic matching member, and an oscillation damping member. The ultrasonic detecting element detects an ultrasonic wave. The acoustic matching member has a receiving surface that is adapted on a side of the certain object to be exposed to a space, in which the detected body exists. The receiving surface receives the ultrasonic wave reflected by the detected body. The acoustic matching member is made of a material having an acoustic impedance larger than that of air and smaller than that of the ultrasonic detecting element. The oscillation damping member is disposed between an attachment portion and the acoustic matching member. The attachment portion is adapted for attaching the ultrasonic sensor to the certain object. The oscillation damping member damps transmission of oscillation from the certain object to the acoustic matching member.

Ultrasonic sensor

An ultrasonic sensor includes an ultrasonic detector for detecting an ultrasonic wave, an acoustic matching member joined to the ultrasonic detector, a housing in which the ultrasonic detector and the acoustic matching member are accommodated, a vibration isolator located between the acoustic matching member and an inner side wall of the housing to damp an unwanted vibration from outside, and a cushion member located between the ultrasonic detector and an inner bottom wall of the housing to absorb external force applied to the ultrasonic sensor The cushion member is not in contact with the acoustic matching member.

An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon layer. A potential difference is generated between a movable side comb-tooth electrode of the movable structure and a fixed side comb-tooth electrode disposed to face the movable side comb-tooth electrode to swing the movable structure. The fixed side comb-tooth electrode is formed in the inside of a through hole bored through the laminate substrate.

Method of manufacturing an electrostatic actuator

A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

Capacitance type physical quantity sensor

A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

Capacitance type acceleration sensor

A capacitance type dynamical quantity sensor includes a semiconductor substrate, a weight portion being displaced in accordance with a dynamical quantity, a movable electrode integrated with the weight portion, and a fixed electrode facing the movable electrode. The movable electrode and the fixed electrode provide a capacitor having a capacitance. The movable electrode is movable in accordance with the dynamical quantity. The capacitance of capacitor is changed in accordance with a displacement of the movable electrode so that the dynamical quantity as the capacitance change is measured with an outer circuit. The facing surface of the movable electrode facing the fixed electrode has a substantially rectangular shape, and an aspect ratio of the facing surface is in a range between 0.1 and 10.

Capacitance type dynamical quantity sensor

A flow meter is formed with a passage for introducing and carrying air to measure and has a sensing part disposed in the passage for measuring a flow rate of the air. A contraction part is formed on an inner surface of the passage so that the contraction part faces the sensing part. The contraction part narrows the flow of the air flowing near the sensing part. A flat surface of the contraction part is formed in parallel with the surface of the sensing part and at least upstream of the sensing part. Thus, collision of particles against the sensing part and adhesion of contaminants to the sensing pert are inhibited. Meanwhile, the flow rate of the air is measured stably and accurately.

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Okazaki, Japan

Tetsuo Yoshioka