Fujitsu Corporation

Fujitsu Semiconductor Limited

Tetsuo Yoshimura

Kenichi Watanabe

Satoshi Otsuka

Kazuo Sukegawa

Tetsuo Izawa

Shinji Kuzuya

A method of manufacturing a semiconductor device includes: forming a first metal film on an insulating film over a substrate; forming a capacitor lower electrode by patterning the first metal film; and forming a dielectric film on upper and side surfaces of the capacitor lower electrode and on the insulating film. The method further includes: forming a conductive protection film on the dielectric film; patterning the conductive protection film into a shape of covering the capacitor lower electrode; forming a capacitor dielectric film in a shape of covering the upper and side surfaces of the capacitor lower electrode, by patterning the dielectric film so that the patterned conductive protection film covers an upper surface of the capacitor dielectric film; forming a second metal film on the patterned conductive protection film; and forming a capacitor upper electrode that covers at least an upper surface of the patterned conductive protection film.

Method of manufacturing semiconductor device including capacitor element

A semiconductor device includes a substrate, an insulating film formed over the substrate, first and second conductive plugs formed in the insulating film, a capacitor element, and a wiring. The capacitor element includes a lower electrode, a dielectric film, and an upper electrode. The lower electrode is connected to an end of the first plug and formed on the insulating film, and includes a first barrier film. The dielectric film is formed on upper and side surfaces of the lower electrode. The upper electrode is formed on the dielectric film, and includes a second barrier metal film being wider than the lower electrode. The wiring is connected to an end of the second plug and formed on the insulating film, and includes a first layer and a second layer formed on the first layer. The first and second layers include the first and second barrier metal films, respectively.

Semiconductor device including capacitor element and method of manufacturing the same

A semiconductor device includes a substrate having first and second device regions separated from each other by a device isolation region, a first field effect transistor having a first polysilicon gate electrode and formed in the first device region, a second field effect transistor having a second polysilicon gate electrode and formed in the second device region, a polysilicon pattern extending over the device isolation region from the first polysilicon gate electrode to the second polysilicon gate electrode, and a silicide layer formed on a surface of the first polysilicon gate electrode, a surface of said the polysilicon gate electrode and a surface of the polysilicon pattern so as to extend on the polysilicon pattern from the first polysilicon gate electrode to the second polysilicon gate electrode, the silicide layer having a region of increased film thickness on the polysilicon pattern, wherein the silicide layer has a surface protruding upward in the region of increased film thickness.

Semiconductor device and fabrication process of forming silicide layer on a polysilicon pattern by reducing thickness of metal layer before forming silicide layer on the polysilicon pattern

Semiconductor device and fabrication process thereof

A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.

There is provided a semiconductor device able to prevent performance degradation of an inductor element provided thereon. A high resistance region is provided below the inductor element formed on the semiconductor substrate. The high resistance region is formed deeper than the well regions of the p-channel and n-channel MOS transistors, thus preventing induction of an eddy current by the magnetic flux generated from the inductor element.

Growing community of inventors

Kawasaki, Japan

Tetsuo Yoshimura