Tokyo Electron Limited

Tetsuo Yoshida

Michishige Saito

Akira Koshiishi

Jun Hirose

Masahiro Ogasawara

Taichi Hirano

Jun Ooyabu

Hiroyuki Ishihara

Kohji Numata

Hiromitsu Sasaki

Yoshiaki Sasaki

Hiroaki Saeki

Keisuke Kondoh

Yasushi Taniyama

Shigeru Ishizawa

Ryoichi Yoshida

Akira Obi

Toshikatsu Wakaki

Hiroshi Suzuki

Hiroshi Takizawa

Hayato Aoyama

A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber; a lower electrode for mounting thereon a substrate to be processed in the processing chamber; an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween; a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising: supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.

Plasma etching method

A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Plasma processing method and apparatus

A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Plasma processing apparatus and method

A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Plasma processing apparatus and method, and electrode plate for plasma processing apparatus

In a port structureA in a semiconductor processing system, a doorA is disposed in a portA defined by upright walland. A tableopposed to the port is disposed outside the system. Defined on the table is a mount regionfor mounting an open type cassetteA for a process subject substrate W. A hoodis disposed rotatable relative to the table. The hood defines in its closed position a closed space surrounding the mount region and port, the space having a size to receive the cassette. First ventholesare formed in the upright walls and/or the door so as to introduce gas from within the system into the closed space in the hood. Second ventholesare formed in the table so as to discharge the gas can be discharged out of the closed space.

Port structure in semiconductor processing system

A vacuum processing apparatus includes a transfer chamber filled with a gas to have an upper limit of a target pressure range, a gas supply system connected to a gas supply source to supply the gas into the transfer chamber, a gas exhaust system for releasing the gas from within the transfer chamber, first and second vacuum chambers connected to the transfer chamber, first and second gate valves interposed between the transfer chamber and the vacuum chambers, which selectively permit the transfer chamber and the vacuum chambers to communicate with each other and a transfer mechanism for transferring a target object from the first vacuum chamber to the transfer chamber via the first gate valve and for transferring the target object from the transfer chamber to the second vacuum chamber via the second gate valve. An opening/closing valve is provided in the gas supply system for selectively supplying the gas from the gas supply source into the transfer chamber, a gas loading space being defined upstream of the opening/closing valve to permit the gas having a volume and pressure set in accordance with the upper limit of a target pressure range to be stored in the gas loading space when the opening/closing valve is closed.

Vacuum processing apparatus

Growing community of inventors

Nirasaki, Japan

Tetsuo Yoshida