Fuji Photo Film Company, Limited

Fujifilm Corporation

Other

Fugi Photo Film Co., Ltd.

Fujifilm Holdings Corporation

Tetsuo Yamada

Jin Murayama

Tatsuya Hagiwara

Satoshi Arakawa

Hiroaki Yasuda

Shinji Uya

Katsumi Ikeda

Ryuji Kondo

Hideki Wako

Hiroyuki Karasawa

Makoto Shizukuishi

Kazuyuki Masukane

Tetsuo Toma

Tomohiro Sakamoto

Yuko Adachi

Masashi Inuiya

A solid state imaging apparatus of which spatial phases of pixels forming a first matrix of adjoining rows and adjoining columns are relatively different from each other is characterized by that an intersection of a line between two pixels to be added in a row direction and a line between two pixels to be added in a column direction approximately agreed with a center of four pixels to be added when the four pixels adjoining in the row and column directions are added, and phases of said centers of four pixels adjoining in the row direction or column direction are relatively different from each other in a second matrix consisted of a plurality of said centers of four pixels.

Solid state imaging apparatus and driving method of the solid state imaging apparatus using four pixel addition

An electric charge transfer apparatus comprising a plurality of vertical charge transfer devices for transferring a signal electric charge, a plurality of charge-discharging circuit sets formed next to each of the plurality of vertical charge transfer device, and an output circuit for outputting the signal electric charge transferred by the plurality of charge-discharging circuits to outside of the electric charge transfer apparatus. Each of the plurality of charge-discharging circuit sets includes at least two charge-discharging circuits for discharging the signal electric charge transferred by at least one of adjacent vertical transfer devices consecutively to avoid an electrical barrier caused by left-behind electric charge.

Charge transfer device and a solid state imaging device using the charge transfer device

A solid state imaging device comprises a semiconductor substrate defining a two-dimensional surface, a plurality of photoelectric conversion elements disposed in a light receiving area of said semiconductor substrate in a plurality of rows and columns, an electric charge read-out device that reads out signal electric charges accumulated in said plurality of photoelectric conversion elements in interlace by dividing the signal electric charges in a plurality of fields, each field at least including the signal electric charges accumulated in the vertically adjacent photoelectric conversion elements corresponding to one color, and a vertical adding device that adds, for each field, the read-out signal electric charges divided into the plurality of fields. A solid state imaging device that can increase vertical resolution at a time of an interlace operation is provided.

Solid state imaging device with increased vertical resolution in interlace scanning method

During a first horizontal blanking period, signal charges on a first row are transferred from a vertical transfer channel to a line memory. During a second horizontal blanking period, the transferred signal charges are partly transferred from the line memory to a horizontal transfer channel. During a third horizontal blanking period, the remaining signal charges on the first row are transferred from the line memory to the horizontal transfer channel. Thereafter, the signal charges on the second row next to the first row are transferred from the vertical transfer channel to a line memory that is vacant.

Driving method of solid-state image pickup device

A solid state imaging device comprises a semiconductor substrate defining a two-dimensional surface, a plurality of photoelectric conversion elements disposed in a light receiving area of said semiconductor substrate in a plurality of rows and columns, color filters in a plurality of colors, each color filter being arranged in correspondence with each photoelectric conversion element, wherein at least a color defining resolution corresponds to two photoelectric conversion elements adjacent to each other in a horizontal direction or in a vertical direction, a vertical electric charge transferring device that vertically transfers signal electric charges generated by the photoelectric conversion elements, a horizontal electric charge transfer device that horizontally transfers the signal electric charges transferred by the vertical electric charge transferring device, and an output device that outputs the signal electric charges transferred by the horizontal electric charge transferring device.

Solid state imaging device with increased vertical and horizontal resolutions in interlace scanning method

A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

Solid state image pickup device capable of draining unnecessary charge and driving method thereof

A charge read-out method and a solid-state imaging device capable of shortening a read-out time of charges stored in a plurality of light receiving units arranged linearly are provided. The charge read-out method includes the steps of moving the charges, which are generated and stored in the plurality of light receiving units linearly arranged by receiving light, to charge transfer paths disposed along a row of the light receiving units on both sides thereof, transferring the charges along the charge transfer paths to an output unit, and calculating a sum of converted values based on amounts of the charges transferred from the charge transfer paths for outputting.

Charge read-out method and solid-state imaging device capable of shortening read-out time charges stored in a plurality of light receiving units

A solid state image pickup device having: a semiconductor substrate having a light receiving area; a number of pixels formed in the light receiving area of the semiconductor substrate in a matrix shape, each of the pixels having a main photosensitive field having a relatively large area and a subsidiary photosensitive field having a relatively small area; a main color filter array formed above the semiconductor substrate and covering at least the main photosensitive fields in register with the respective pixels; and a micro lens array formed on the color filter array and covering at least the main photosensitive fields in register with the respective pixels, wherein an image signal can be selectively picked up from either one of the main and subsidiary photosensitive fields. A solid state image pickup device having a high resolution can be provided.

Solid state image pickup device with two photosensitive fields per one pixel

A linear image sensor chip is manufactured by forming an image pickup section, peripheral circuit sections, a plurality of bonding pads, and a light-suppressing layer on a semiconductor substrate having an elongated shape. In this case, each of the bonding pads is formed outer than photodiode groups in the image pickup section along a longitudinal direction of the semiconductor substrate. Even if the dynamic range of an image reader utilizing such a linear image sensor chip is broadened, it is possible to suppress generation of noises without lowering the sensitivity.

Linear image sensor chip and linear image sensor

In a CCD image sensor, a CCD line memory is disposed between each vertical charge transfer device and a horizontal charge transfer device to selectively transfer charges from each vertical charge transfer device to the horizontal charge transfer device. A discharge drain is disposed along the horizontal charge transfer device to selectively discharge charges from vertical charge transfer devices via the horizontal charge transfer device to the discharge drain. Therefore, image data in which the numbers respectively of the vertical and horizontal pixels are reduced can be generated.

Charge transfer device having discharge drain, CCD image sensor, and CCD image pickup system

A charge transfer device whose output end is electrically connected to a charge detector circuit is driven by negative pulse voltage trains to reduce power consumption of the charge detector circuit.

Solid state image pickup apparatus of low power consumption and its driving method

A color shooting solid state image pickup apparatus is composed by using a solid state image pickup device having a number of color pixels disposed in a plurality of rows and columns in a pixel shift layout with distributing at least one color-type color pixels in a square lattice pattern aligned in row and column directions and by using a video signal proceeding unit being able to perform interpolation processes using color information obtained from pixel signals output from the solid state image pickup device excepting one piece of color information obtained from pixel signals of the color pixels distributed in a square lattice pattern. A moving image having a smooth motion can be reproduced on a monitor even if the process performance of the video signal proceeding unit is not improved so much.

State image pickup apparatus having pixel shift layout

A linear image sensor is constituted to include a red diode line, a green diode lineand a blue diode line, and the green diode linepositioned between the red diode lineand the blue diode lineis provided with a shift of an approximately &#xbd; pitch in the vertical direction of a photodiode as shown. Electric charge transfer channelsandfor transferring signal charges detected by the photodiodes are formed close to the red diode line, the green diode lineand the blue diode linerespectively, and take a winding shape extended in a main scanning direction. Signal charges read onto the electric charge transfer channelsandare transferred in the main scanning direction and are output from output ends OUT, OUTand OUT

Image sensor

A charge transfer device having: a semiconductor substrate; a charge transfer path formed in the semiconductor substrate and made of a first conductivity type semiconductor layer; a plurality of charge transfer electrodes formed near above the charge transfer path; and a first pulse signal generator circuit for applying either a first pulse signal train for n-phase (n being an integer larger than 1) driving of charges in the charge transfer path to the charge transfer electrodes or a second pulse signal train for (n+1)-phase driving of charges in the charge transfer path to the charge transfer electrodes.

Growing community of inventors

Miyagi, Japan

Tetsuo Yamada