National Institute of Advanced Industrial Science and Technology

Other

Tdk Corporation

The Japan Steel Works, Ltd.

Nec Corporation

Agency of Industrial Science and Technology

Takagi Kogyo Co., Ltd.

Kagawa Prefectural Government

Tetsuo Tsuchiya

Toshiya Kumagai

Susumu Mizuta

Tomohiko Nakajima

Takaaki Manabe

Yoshimi Kubo

Tsutomu Yoshitake

Yuichi Shimakawa

Takashi Ebisawa

Mitsugu Sohma

Akio Watanabe

Iwao Yamaguchi

Kenichi Tsukada

Kunihiko Koyanagi

Hidehiko Ohtu

Jun Akedo

Masato Susukida

Yuki Miyamoto

Yuki Yamashita

Akira Yabe

Seiji Kurashina

Hirobumi Ushijima

Hiroyuki Niino

Muneyasu Suzuki

Kentaro Shinoda

Haruo Ishizaki

Yoji Imai

Shun Hasegawa

Shusuke Kanazawa

Motoshi Itagaki

Yuuko Uzawa

Masami Nishikawa

Toshimitsu Takagi

Takako Nakamura

Yuriko Mizuta, Legal Representative

Toshihito Sasaki

Hiroshi Shirakawa

Susumu Nakamura

Takumi Higa

Disclosed is a highly dense aggregate of brittle material particles having an interface at which the particles are bonded to each other and pores between the brittle material particles structuring the highly dense aggregate, where a porosity which is a volume ratio of the pores with respect to the whole of the highly dense aggregate is equal to or less than 20%, and a volume ratio of the pores communicating with an apparent outer surface of the highly dense aggregate with respect to a volume of all of the pores of the highly dense aggregate is equal to or higher than 65%.

Highly dense brittle-material structural member having impregnating property

Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling. This vanadium oxide film is produced by applying a mixture solution containing a vanadium organic compound, an aluminum organic compound, and a copper organic compound to a substrate, calcining the substrate at a temperature lower than the temperature at which the substrate decomposes, and irradiating the surface of the substrate onto which the mixture solution has been applied with ultraviolet light.

Vanadium oxide film and process for producing same

A first object is to provide a conductive film which is flexible from the standpoint that bending in a bending test or the like does not largely change its electrical resistance. Provided is a process for producing a flexible conductive film including applying a solution or dispersion containing at least any one of metal organic compounds, metals, and metal oxides onto a base material and treating the resulting film by at least either one of a heating step at a temperature not deteriorating the base material or an irradiation step with ultraviolet light, microwaves, or plasma.

Flexible conductive film and process for producing the same

A rope including a yarn twisted by using a raw thread of a polyethylene fiber having an ultrahigh molecular weight and a strand twisted by the yarn and subjected to rope-making through the strand, and a resin coating layer for protecting the rope is formed on an external surface of the yarn, an external surface of the strand or an external surface of the rope. A method of manufacturing the rope includes a pretreating step I of removing an oil content contained in the rope and performing an affinity enhancing treatment over a surface thereof and a resin coating step II of forming a resin coating layer for protecting the rope on an external surface of the yarn, an external surface of the strand or an external surface of the rope. The resin coating layer for protecting the rope is formed.

Rope and method of manufacturing the same

A thin film which comprises an organic metal salt or an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(BMO) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600&#xb0; C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.

Oriented perovskite oxide thin film

A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals and oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, the provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and the main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein the support body is irradiated with the laser light during a period between the steps (1) and (2) from a surface of the support body, on the opposite side of the surface coated with the solution of the organic compound of the metals for forming the superconductive material.

Method of producing superconductive oxide material

Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.

Resistor film for bolometer

A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).

The present invention provides a method for producing a perovskite-structure oxide, with which a highly crystalline oxide layer is formed on a base layer that is metal or the like. The method comprises the steps of: forming, on a base layer, a buffer layer having thermal conductivity lower than thermal conductivity of the base layer; forming a precursor layer of an ABO-type perovskite-structure oxide comprising Ba at A sites thereof and Ti at B sites thereof on the buffer layer; decomposing the precursor layer, thereby forming an oxide layer comprising Ba and Ti; and annealing the oxide layer by irradiating laser light thereon.

Method for producing perovskite-structure oxide

An object is to provide a method of making a metal oxide film with a sufficiently high degree of crystal orientation, without difficulties, at low cost, and with little damage to a base material and the metal oxide film, and to provide laminates and electronic devices using the same. A method includes a step of forming a metal film having a (111) plane, on a base material; a step of forming a metal oxide film on the (111) plane of the metal film; and a step of maintaining a temperature of the metal oxide film formed on the (111) plane of the metal film, at 25-600&#xb0; C. and irradiating the metal oxide film with UV light.

Method of making a metal oxide film, laminates and electronic devices

An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.

Infrared sensor manufacturing method suitable for mass production

Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600&#xb0; C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.

Manufacturing method and usage of crystallized metal oxide thin film

A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.

Rare earth-Ba-Cu complex composition and method of producing superconductor using same

In an infrared ray sensor for a bolometer, a bridge structure body, a resistive element film for the bolometer, and a protection film is formed via a space on a substrate, and is formed into a solution form by dissolving metal organic compound into solvent. The solution is applied and dried. A laser ray is irradiated for the solution with wavelength of 400 nm or less. A bond between carbon and oxygen is decomposed and cut to thereby form an oxide thin-film.

Method for manufacturing infrared ray sensor

An oxide for use in a bolometer with an oxide thin-film formed is manufactured on an insulating substrate. Metal organic compound is dissolved in solvent to form solution during manufacturing the oxide thin-film. The solution is applied on the insulating substrate, and the applied solution is dried. A bond between carbon and oxygen is cut and decomposed by irradiating a laser ray with wavelength of 400 nm or less. A generated oxide is crystallized.

Method of manufacturing oxide thin film for bolometer

Growing community of inventors

Tsukuba, Japan

Tetsuo Tsuchiya