Denso Corporation

Nippondenso Co., Ltd.

Nippon Soken, Inc.

Tetsuo Toyama

Kazuhiro Inoguchi

Kinya Atsumi

Yuji Kimura

Katsunori Abe

Naochika Nunogaki

Kenji Takigawa

Nobuei Ito

Shinichi Yatsuzuka

Noriyuki Matsushita

Yoshiaki Nishijima

Masahiro Okajima

Novuei Ito

Hitoshi Hayashi

Katsunori Iwase

Yoshimasa Hijikata

Yoshiyasu Yamada

Michiyo Mizutani

Shigeru Ooyanagi

Rie Fukuta

A heat transport fluid passage device for a heat transport circuit has a wall defining a passage through which a heat transport fluid flows. The heat transport fluid contains a solvent made of water or an organic substance and fine particles dispersed in the solvent. A hydrophobic membrane is formed on a surface of the wall.

Heat transport fluid passage device with hydrophobic membrane

A reforming device includes a reforming part that subjects a hydrocarbon-based raw material to be reformed to a reforming reaction to form a reducing agent to be supplied to a reducing catalyst for reducing nitrogen oxide selectively. The reforming part has a reforming reaction region through which the raw material to be reformed passes and is reacted with supplied hydrogen atoms supplied so as to be reformed to the reducing agent. For example, a hydrogen permeable membrane having a first surface and a second surface may be provided in the reforming part to permeate hydrogen atoms from the first surface to the second surface and to produce the hydrogen atoms on the second surface. The reforming device can be suitably used for an exhaust gas control system for cleaning exhaust gas, for example.

Reducing agent forming device and exhaust gas control system using the same

An air conditioning system comprising a gas-impermeable wall defining a space for air conditioning, and a selective separating member disposed in the wall as a part of the wall, having a function of allowing preferential permeation of oxygen and carbon dioxide and at the same time, blocking the permeation of hydrocarbon, nitrogen oxide, sulfur oxide and a fine solid component, in which the selective separating member comprises an organic polymer and satisfies the relationship of P1/P2&#x3e;10 wherein P1 is the permeation coefficient of oxygen and carbon dioxide and P2 is the permeation coefficient of hydrocarbon, nitrogen oxide, sulfur oxide and a fine solid component.

Air conditioning system

A material and method for bonding a semiconductor device to a pedestal, which can obtain a sufficient bonding strength and stable electric contact, are disclosed. On an n-type electrode constituting an ohmic electrode for a semiconductor laser device are formed a Ni layer and an Au-Sn solder layer. Then, the solder layer is melted and bonded to a heat sink provided with Au-plating. The film thickness of the Ni layer is set to approximately 500 .ANG. or more. When the solder layer is melted, Ni in the Ni layer diffuses into the solder layer and Sn in the solder layer diffuses into the Ni layer. By this mutual diffusion, bonding strength and wettability between the semiconductor device and pedestal can be improved. In addition, by setting the composition ratio of Ni layer to the Au-Sn solder layer to 1.3 wt % or more and under 10 wt %, bonding can be performed at a lower melting point and concurrently a higher bonding strength can be obtained.

Bonding material and bonding method for electric element

A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 .mu.m or more.

High output semiconductor laser element having robust electrode structure

Silicon nitride-alumina composite ceramics composed of silicon nitride crystals, .alpha.-alumina crystals and .beta.'-sialon crystals, wherein the silicon nitride crystals and the .beta.'-sialon surrounded the .alpha.-alumina crystals so as to prevent the connection of the .alpha.-alumina crystals. And a method for producing the silicon nitride-alumina composite ceramics which has the steps of preparing a mixture powder composed of 20 to 70 wt % of alumina powder and silicon nitride powder as a remainder, the average particle diameter of the alumina powder being two or more times as large as that of the silicon nitride powder, and firing the mixture powder in an atmosphere of inactive gas.

Silicon nitride-alumina composite ceramics and producing method thereof

An electrically insulating ceramic sintered body suitably used in a ceramic glow plug, for example, is formed by firing a mixed powder of 75 to 95 vol % of a basic material, 25 to 5 vol % of an additive and a sintering aid. The basic material is composed of at least one material selected from the group consisting of silicon nitride, aluminum nitride, and .beta.-sialon. The additive is composed of at least one material selected from the group consisting of silicide, carbide, nitride, and boride of metal, the additive having a thermal expansion coefficient larger than that of the basic material. And the sintering aid is composed of one of alumina in an amount of 3 to 50 wt % of the total amount of the basic material and the additive, and spinel in an amount of 2 to 15 wt % of the total amount of the basic material and the additive. The sintered body has the structure that particles of the additive cohere and the cohering additive particles are dispersed in particles of the basic material so as to be surrounded by the particles of the basic material and separated from adjacent cohering additive particles by the particles of the basic material. When the sintered body is used as a heater supporting member of the ceramic glow plug, the thermal expansion coefficient thereof can be controlled in accordance with that of the heater, and a high specific resistance of not less than 10.sup.5 .OMEGA. cm can be obtained.

Electrically insulating ceramic sintered body

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Chiryu, Japan

Tetsuo Toyama