Mitsubishi Electric Corporation

Canon Kabushiki Kaisha

Nikon Corporation

Tdk Corporation

Mitsubishi Denki Kabushiki Kaisha

Takigen Manufacturing Co. Ltd.

Yoshino Kogyosho Co., Ltd.

Nippon Telegraph and Telephone Corporation

Mitsubishi Heavy Industries Limited

Canare Electric Co., Ltd.

Renesas Electronics Corporation

Ngk Insulators, Inc.

Tokyo Shibaura Denki Kabushiki Kaisha

Trio Kabushiki Kaisha

Bandai Namco Entertainment Inc.

Tetsuo Takahashi

Hiroaki Sano

Norifumi Kajimoto

Yosuke Nishide

Satoru Shiobara

Jun Kamatani

Naoki Yamada

Hirokazu Miyashita

Hiroki Ohrui

Koji Ishizuya

Masumi Itabashi

Ryu Kamibaba

Katsumi Nakamura

Yasuhiro Omura

Tadaharu Minato

Hironobu Iwawaki

Yojiro Matsuda

Masana Harada

Tomona Yamaguchi

Takayuki Ito

Minoru Abe

Junichi Chiba

Hiromi Shimura

Masato Suzuki

Takashi Mori

Kuniaki Takahashi

Akihiko Furukawa

Hidenori Fujii

Masanori Muratsubaki

Mitsuru Kaneda

Kenji Suzuki

Akira Okita

Koji Kudo

Kenya Suzuki

Koichi Nishi

Naoki Ooba

Takami Otsuki

Kenji Harada

Toshio Watanabe

Tetsuya Kosuge

Toshihiko Miyajima

Etsuro Kishi

Yutaka Ichihara

Yuji Kudo

Shinya Soneda

Masaki Kurihara

Masayoshi Tarutani

Itaru Takaya

Kentaro Ito

Kei Tagami

Hajime Muta

Kenichi Ikari

Yuzo Ishii

Maki Okajima

Ryuji Ishii

Kenichi Saito

Kentaro Suzuki

Kotaro Harigane

Yuichi Higuchi

Koichi Ishige

Daisuke Shimoyama

Kazunori Seno

Shigeto Honda

Junichi Yamashita

Hidekazu Takahashi

Takao Iizuka

Akihito Saitoh

Hideki Takahashi

Hiroshi Ikeda

Tomohide Terashima

Kazuaki Tashiro

Akihiro Senoo

Masayuki Yoshida

Yutaka Miyamoto

Osamu Tanitsu

Yoshiaki Kisaka

Takuya Takahashi

Hideki Komatsuda

Masahito Tomizawa

Takeshi Ito

Keiji Okinaka

Atsushi Narazaki

Yuki Mori

Yoshifumi Tomomatsu

Takuya Ohara

Minako Nakasu

Toshiyuki Yamada

Masato Shibuya

Osamu Moriwaki

Isao Kawata

Mitsumasa Nakajima

Satoshi Ota

Yuichiro Ikuma

Kei Kuwabara

Yuto Ito

Atsushi Watanabe

Shigeki Aisawa

Mitsunori Fukutoku

Akihiro Kato

An apparatus including sub-pixels arranged on a substrate, the sub-pixels including a first, a second, and a third sub-pixels, each of the sub-pixels including a lower electrode, an insulating layer covering an end portion of the lower electrode, an organic layer, and an upper electrode in mentioned order starting from a side closer to the substrate, at least part of the organic layer being continuously arranged in at least two of regions between a position on a first lower electrode included in the first sub-pixel and a position on a second lower electrode included in the second sub-pixel, between the position on the second lower electrode and a position on a third lower electrode included in the third sub-pixel, and between the position on the third lower electrode and the position on the first lower electrode.

Apparatus, display apparatus, photoelectric conversion apparatus, electronic equipment, illumination apparatus, and moving object

A photoelectric conversion element including an anode, a cathode, and a photoelectric conversion layer, wherein the photoelectric conversion layer contains a first organic compound and a second organic compound, and difference between oxidation potential of first organic compound and reduction potential of second organic compound is larger than 1.5 [V], and the first organic compound is any one of general formulae [1] below, a fluoranthene derivative, and a metal complex, Rrepresents a hydrogen atom or a substituent, Ar, Ar, and Zrepresents a substituent, nand nrepresents an integer of 0 to 4, and Xto Xrepresents a nitrogen atom, a sulfur atom, an oxygen atom, or a carbon atom.

Photoelectric conversion element, image pickup element, and image pickup apparatus

The present disclosure provides an electronic device including a plurality of first electrodes, a second electrode, a functional layer disposed between each first electrode and the second electrode, and an insulating layer having a slope portion on the first electrode, wherein the functional layer is continuously disposed so as to cover the first electrode, a neighboring first electrode, and the insulating layer covering the first electrode and the neighboring first electrode, the functional layer on the first electrode has a layer thickness smaller than a height from an upper surface of the first electrode to an upper surface of the insulating layer, and the functional layer on the slope portion of the insulating layer has a layer thickness of 20 nm or more in a direction perpendicular to a slope surface of the slope portion.

Electronic device, display apparatus, photoelectric conversion apparatus, electronic apparatus, illumination apparatus, and moving object

An organic device comprising first and second electrodes above a main surface of a substrate, an insulator which includes a first portion arranged between the first and second electrodes and a second portion arranged to cover a peripheral portion of the first electrode and an organic layer is provided. An upper surface of the insulator which is between a vertex portion of the second portion and at least one of a third portion of the first electrode which is not covered by the insulator and the first portion includes a slope portion having angle 50° to 180° with respect to the main surface. An upper end of the slope portion is farther from the main surface than an upper surface of a charge generating layer of the organic layer, and is closer to the main surface than an upper surface of the organic layer.

Organic device having an insulating layer with an upper surface including a slope portion with an angle between 50° and 180° with respect to a surface parallel to a main surface

An electronic device including elements arranged on a substrate, each of the elements including an insulating layer, a first electrode, a functional layer, and a second electrode in mentioned order starting from a side closer to the substrate. The insulating layer has an inclined portion that is inclined relative to the substrate. The first electrode has a first portion positioned on the inclined portion and a second portion in contact with the functional layer. The second portion has a smaller inclination angle relative to the substrate than the first portion. A thickness of the functional layer positioned on the first portion in a direction normal to a functional layer surface in contact with the first portion is smaller than a thickness of the functional layer positioned on the second portion in a direction normal to a functional layer surface in contact with the second portion.

Electronic device, display apparatus, photoelectric conversion apparatus, electronic equipment, illumination apparatus, and moving object

A semiconductor apparatus includes a semiconductor substrate and a second electrode. Semiconductor substrate includes a device region and a peripheral region. An ndrift region and second electrode extend from device region to peripheral region. An n buffer layer and a p collector layer are provided also in peripheral region. Peripheral region is provided with an n type region. N type region is in contact with second electrode and n buffer layer. The turn-off loss of the semiconductor apparatus is reduced.

Semiconductor apparatus

Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

Method for manufacturing semiconductor device

A semiconductor device comprises an electrode on a substrate, an insulating layer covering an edge of the electrode and disposed on the substrate, and an organic layer comprising a charge transport layer on the electrode and insulating layer and a functional layer, wherein the insulating layer has a first portion forming an angle of 0&#xb0; to 50&#xb0; with respect to a surface parallel to a lower surface of the electrode, a second portion located closer to the substrate than the first portion and sloping at more than 50&#xb0;, and a third portion located closer to the organic layer than the first portion and sloping at more than 50&#xb0;, wherein a length of the third portion in a direction perpendicular to the parallel surface is larger than a thickness of the charge transport layer at a position in contact with the electrode.

Semiconductor device, display apparatus, imaging apparatus, electronic apparatus, illumination apparatus, moving object, and photoelectric conversion apparatus

A semiconductor device according to the present disclosure is an RC-IGBT in which an IGBT regionand a diode regionare provided adjacent to each other. The diode regionincludes a p-type anode layerprovided on a first principal surface side of an n-type drift layer, a p-type contact layerprovided on the first principal surface side of the p-type anode layerand at a surface layer of a semiconductor substrate on the first principal surface side and connected with an emitter electrode, and an n-type cathode layerprovided at a surface layer of the semiconductor substrate on a second principal surface side. The p-type contact layercontains aluminum as p-type impurities, and the thickness of the p-type contact layeris smaller than the thickness of an n-type source layerprovided in the IGBT region

Semiconductor device

There is provided a semiconductor device having a semiconductor element and a protective film that is disposed above the semiconductor element and contains silicon atoms and nitrogen atoms, wherein the protective film has an average number of nitrogen atoms bonded to one silicon atom of less than or equal to 1.35.

Semiconductor device, method of manufacturing the same, display device, photoelectric conversion device, electronic device, illumination device, and mobile object

An organic device comprising first and second conductive line, an insulator arranged above the first and second conductive lines, a first electrode arranged above the insulator, an organic layer arranged above the first electrode, a second electrode arranged above the organic layer, a first via including a first conductor connecting the first conductive line and the first electrode, and a second via including a second conductor connecting the second conductive line and the second electrode, is provided. An upper portion of the first via is filled with the first conductor. An upper portion of the second via includes a region which is not filled with the second conductor and covered by the second conductor. An inner wall of the second conductor along the second via includes a region without the organic layer in contact with the second electrode.

Organic device having a first conductive member electrically connecting a first electrode and a second conductive member electrically connecting a second electrode, display device, photoelectric conversion device, electronic device, illumination device, mobile device lighting appliance, and mobile device having the same

A cap configured to be detachably attached to a mouth portion of a container body having a containment space for contents and close the mouth portion, includes: a transparent or semitransparent topped tubular outer lid portion; and a topped tubular inner lid portion located in close contact with an inner side of the outer lid portion so as to be relatively non-rotatable. A retaining protrusion having an inclined surface that is inclined inward in a downward direction and extends to a lower end of the outer lid portion is provided on an inner peripheral surface of the outer lid portion. The retaining protrusion engages with a retaining depression provided on an outer peripheral surface of the inner lid portion, to suppress separation between the outer lid portion and the inner lid portion.

Cap and container

A transistor and a diode are formed on a common semiconductor substrate; the semiconductor substrate has a transistor region and an outer peripheral region surrounding it; the transistor region is divided into a plurality of channel regions and a plurality of non-channel regions by a plurality of gate electrodes each having a stripe shape; each of the plurality of non-channel regions has a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fifth semiconductor layer, a first electrode, and a second electrode; the third semiconductor layer and the fifth semiconductor layer are electrically connected to the second electrode via a contact hole; and the fifth semiconductor layer is selectively provided not to be in contact with an impurity layer of a first conductivity type that is provided in the outer peripheral region and defines a boundary with a cell region.

A semiconductor apparatus include a first electrode, an insulating layer covering an end of the first electrode, a functional layer arranged on the first electrode and the insulating layer, and a second electrode arranged above the functional layer, wherein, in a cross-section passing through the insulating layer, and the first electrode, the insulating layer includes a first portion having a side surface inclining at an angle of 45&#xb0; or more and 90&#xb0; or less, a second portion having a side surface inclining at an angle smaller than 45&#xb0;, and a third portion below the first portion, and having a side surface inclining at an angle smaller than 45&#xb0;, and wherein a length of the second portion in a direction vertical to the first electrode is larger than that of the third portion.

Semiconductor apparatus, display apparatus, photoelectric conversion apparatus, electronic device, illumination apparatus, and movable body

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Tokyo, Japan

Tetsuo Takahashi