Kabushiki Kaisha Kobe Seiko Sho

Other

Kobe Steel, Ltd.

Kobe Precision Inc.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Tetsuo Suzuki

Satoru Takada

Katsuyuki Iijima

Yoshihiro Hara

Toshimasa Ishigaki

Masahiro Nishizawa

Maki Hamaguchi

Fumio Takahashi

Isao Kimura

Tetsuya Yamamoto

Katsunori Shimasaki

Kozo Saiki

Keita Yura

Hidetoshi Inoue

Hideki Yamamuro

Hidetsugu Habata

Masakazu Yamamoto

Kichiro Kaji

Kunio Otsuka

Hiroshi Chosokabe

A remover contains an alkaline component, a bivalent zinc ion, a ferric ion, a chelating agent, and a nitrate ion. By using this remover, an anodized film can be selectively removed from an aluminum or aluminum-alloy member.

Methods and removers for removing anodized films

A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300&#xb0; C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

Method of reclaiming silicon wafers

The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

Polishing slurry and method of reclaiming wafers

A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.

Specifying method for Cu contamination processes and detecting method for Cu contamination during reclamation of silicon wafers, and reclamation method of silicon wafers

A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

Method for reclaiming wafer substrate and polishing solution compositions therefor

Method of evaluating quality of silicon wafer and method of reclaiming the water

A cathode ray tube has a metal film formed to cover phosphor areas of a phosphor layer on an inner wall of a panel portion of an envelope. The metal film is formed over an organic film resin applied to the phosphor layer, the organic film resin is baked and removed so that the metal film covers the phosphor layer, and cracks are formed in the metal film in a greater number on side portions of the phosphor areas than on an upper portion of the phosphor areas. This construction results in a cathode ray tube with a metal film that can prevent a blister phenomenon and a reduction in brightness.

Cathode ray tube having metal film with holes located on upper and side portions of phosphor areas

The present invention provides a polishing fluid composition which can effectively polish a surface of a semiconductor silicon wafer or a surface of a film comprising silicon to be formed on silicon wafers with a markedly reduced amount of colloidal silica to be used as abrasives, or a polishing fluid composition which is particularly useful for a polishing step after removal of an oxide layer in a two-step polishing method. The former polishing fluid composition comprises an alkaline suspension which contains a water-soluble silicic acid component, colloidal silica and an alkaline component, and which has a pH value of 8.5 to 13. Meanwhile, the latter polishing fluid composition comprises an alkaline solution which contains a water-soluble silicic acid component and an alkaline component, and which has a pH value of 8.5 to 13; and is substantially free of abrasive particles.

Polishing fluid composition and polishing method

A carbon substrate is prepared from a molded article of thermosetting resin by heat-treating in an inert atmosphere. The resin is characterized in that the content of Fe, Al, Ni, Co, Cr, and Mg insoluble in the resin is less than 1 ppm each and the content of Ca and Si insoluble in the resin is less than 2 ppm each. The thermosetting resin is further characterized in that the water content is less than 3 wt % and the ratio of the methylene carbon (CH.sub.2) connected to the hydroxyl group (OH) is less than 3% (based on the total carbon number). The carbon substrate prepared in this manner is almost free of defects and voids. It is suitable for use as the substrate of magnetic recording medium. The thermosetting resin may be a powdery or granular one which fluidizes and then cures on heating. A molded article of thermosetting resin is prepared by introducing the resin melt into a mold and curing it with heating under pressure. It is subsequently heat-treated in an inert atmosphere to give a molded article of glass-like carbon.

Carbon substrate and production thereof

A process for producing silicon carbide whiskers by heating a react solid silicon-containing starting material and carbon-containing starting material in a reaction vessel, wherein a molding material, which is prepared by previously molding the silicon-cotaining starting material into a predetermined shape, and a powdery carbon starting material are heated to a predetermined reaction temperature under a hydrogen gas atmosphere. Silicon carbide whiskers which are linear with no bendings, long fiber length, high aspect ratio and low silicon dioxide impurity can be obtained at a high yield of greater than 90% based on silicon vaporized from the silicon-containing starting material.

Growing community of inventors

Kobe, Japan

Tetsuo Suzuki