S-tec Corporation

Shin-etsu Chemical Co., Ltd.

Horiba Stec, Co., Ltd.

Tokyo Electron Limited

Horiba, Ltd.

Tetsuo Shimizu

Michinori Iwamoto

Toshinobu Ishihara

Tsuneyuki Okabe

Shuji Moriya

Hitoshi Kitagawa

Kazuhiro Hirahara

Hideaki Miyamoto

Hiroyuki Ebi

Hiroshi Mihira

Seiki Takaya

Tadahiro Yasuda

Katsuhiko Tomita

Shigeyuki Hayashi

Akito Takahashi

Hiroshi Ohsasa

Kiyoharu Tujimura

Takashi Shirai

Masaichi Bandoh

Wataru Nishida

Makoto Yonebayashi

The flow rate control device is provided with: a fluid resistor provided on the flow channel; a pressure sensor provided in any one of an upstream side or a downstream side of the fluid resistor; a pressure calculating part configured to calculate a pressure in a side with respect to the fluid resistor where the pressure sensor is not provided; a flow rate calculating part configured to calculate a flow rate based on the measurement pressure value and a calculation pressure value calculated by the pressure calculating part; and an abnormality diagnosing part configured to diagnose an abnormality of the measurement flow rate value based on the measurement flow rate value and a calculation flow rate value.

Flow rate control device, diagnostic device for use in flow rate measuring mechanism or for use in flow rate control device including the flow rate measuring mechanism and recording medium having diagnostic program recorded thereon for use in the same

A thermal mass flow meter and a thermal mass flow control device addresses a thermal siphon error, even if they are in a compact and inexpensive structure, without using a flow path converting block. A control computing process portion is configured to correct a measurement error caused by thermal siphon by calculating a correction value based on a measurement value at time of depressurizing fluid flow path and flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at time of charging an actual fluid into the flow rate measuring conduit, kind of the actual fluid, pressure at time of charging the actual fluid, and flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output flow value by the stored correction value.

Thermal type mass flow meter, and thermal type mass flow control device

Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage () for supplying gas into a heat treatment unit (), an MFC () for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves () provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.

Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system

A liquid material evaporation apparatus including a mixing chamber, a flow control unit, a first flow passage for introducing a liquid material, a second flow passage for introducing a carrier gas connected to the mixing chamber through a first nozzle, the first nozzle inhibiting backflow from the mixing chamber into the second flow passage. A third flow passage for discharging evaporated mixed gas is connected to the mixing chamber through a second nozzle, the mixed liquid material and carrier gas being forced through the second nozzle by the flow control unit, the mixed liquid material and carrier gas depressurizing after passing through the second nozzle to evaporate into a mixed gas in the third flow passage. Heat is applied to the mixing chamber and the second and third flow passages to enhance mixing in the mixing chamber and to avoid condensation in the third flow passage.

Liquid material evaporation apparatus for semiconductor manufacturing

A liquid material supply system in which an inert gas is injected into a material tank accommodating a liquid material so as to discharge the liquid material into a liquid material discharge pipe connected to the material tank and that the inert gas dissolved or mixed in the discharged liquid material is trapped by a gas trap provided on the liquid material discharge pipe, is constructed in such a manner that when a dissolution temperature characteristic of the inert gas with respect to the liquid material is negative, an upstream side of the liquid material discharge pipe with respect to the gas trap is heated while the downstream side of the liquid material discharge pipe with respect to the gas trap is cooled.

Liquid material supply system and method for semiconductor manufacturing

A method for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber which comprises the steps of heating an organometal compound to a predetermined temperature to obtain vapor of the compound at a predetermined vapor pressure and supplying, in a constant flow rate, the vapor to the surface of a substrate heated under a reduced pressure: an apparatus for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber 11 comprising a first gas flow path for the vapor of the organometal compound which connects a container 20, in which the organometal compound is charged, to a crystal growth chamber heated under a reduced pressure through a first valve 21, a first massflow controller 22 and a second valve 23 in this order; and a constant temperature oven 24 and 25 for controlling the temperature of the container 20 and the first gas flow path extending from the container 20 to the second valve 23, are herein disclosed. The method and the apparatus makes it possible to form a thin film on substrate having even a large surface area and uniform composition and thickness with good reproducibility and to provide an epitaxial thin film of a compound semiconductor having good sharpness of the crystal growing boundary; the method further makes it possible to prevent the contamination of the solid organometal compound and to provide good workability.

Method for vaporizing and supplying organometal compounds

An apparatus for vaporizing and supplying an organometal compound comprising a gas flow path for starting gas which connects a container filled with the organometal compound to a crystal growth chamber heated under reduced pressure through a main valve, a massflow controller for the starting gas and a valve for supplying the starting gas; and a flow path for a carrier gas which connects a carrier gas source to the discharge outlet of the valve for supplying the starting gas through a massflow controller for carrier gas and a heat exchanger. The container, the flow path for the starting gas and the flow path for the carrier gas are arranged in a constant temperature oven.

Apparatus for vaporizing and supplying organometal compounds

In a flow rate control valve comprising a fixed core made of a magnetic material provided with a coil arranged on a circumference thereof, a movable core and a valve body made of a magnetic material moved by an attraction by a magnetic force of said fixed core or a release from said magnetic force to open and close a valve seat and a movable member composed of a supporting spring, the fixed core is provided with a flowing conduit passing through an opening formed in a surface opposite to said movable member and the movable member is provided with a passage guiding a fluid, so that the total quantity of fluid can be smoothly flown without staying a part of the fluid.

Flow rate control valve

A control valve, in which a valve body opening and closing a valve mouth is driven by a strain force of a piezostack, characterized in that an upper fixed portion of said piezostack is supported by a ring-like tapered surface or a spherical surface and a lower movable portion of the piezostack is combined with a valve body through a spherical bearing. The strain output can be surely transmitted to said valve body by holding the piezostack so that no movement other than a strain resulting from the application of voltage may be produced.

Control valve

A valve body which is driven by a valve body-driving portion constructed from a piezoelectric stack to open and close a valve mouth. The piezoelectric stack consists of piezoelectric disc elements having a thickness of 0.1 to 0.5 mm and a diameter of 10 to 50 mm, whose upper surface and lower surface are both plated, and thin metallic plates each having a thickness of 0.05 to 0.2 mm and being high in electric conductance, are alternately laminated one between the piezoelectric elements by one (the number of piezoelectric elements laminated is 100 to 200). Every other one of the thin metallic plates are connected to a positive polar lead and the remaining plates are connected to a negative polar lead, and a voltage-applying lead wire is connected with each of the lead wires. A driving force transmission member can be provided between the valve body-driving portion and the valve body for amplifying the amount of distortion of the piezoelectric stack to thereby allow adjustment of the amount of movement of the valve body and adapt the structure for handling large volumes of fluid.

Fluid control device

A thermopile type detector which is constituted by an electrically insulating film, a thermopile supported on the film, a semiconductor substrate supporting the film, and a temperature sensing element on the surface of the substrate on which the film is supported and in the neighborhood of a cold junction of the thermopile. The temperature on the substrate immediately adjacent a cold junction of the thermopile can be measured for use in compensating the output of the thermopile for the changes in temperature of the cold junction. The temperature sensing element can be a semiconductor material such as a diode or a transistor forming a semiconductor with the substrate.

Growing community of inventors

Kyoto, Japan

Tetsuo Shimizu