Showa Denko K.k.

Toyoda Gosei Co., Ltd.

Tetsuo Sakurai

Hisayuki Miki

Mineo Okuyama

Masato Kobayakawa

Hitoshi Takeda

Hiromitsu Sakai

Hideki Tomozawa

Yasuhito Urashima

Joseph Gaze

Akira Bandoh

Syunji Horikawa

When compound semiconductor layers are formed on a compound semiconductor substrate () by sequentially layering group III nitride semiconductor crystalline layers by metal organic chemical vapor deposition method, the compound semiconductor substrate () is attached inside of a reaction container with the crystal growth surface thereof facing upward, a protection member () having plural grooves () formed in a radiating manner on the side facing the crystal growth surface is attached above the compound semiconductor substrate (), and a material gas is supplied to the inside of the reaction container through a first through hole () provided in the center of the protection member (). Thereby, in the manufacture of a compound semiconductor using metal organic chemical vapor deposition method, a decrease in yield caused by adhesion of peeled-off reaction byproducts to the substrate or to the epitaxially grown film on the substrate is suppressed.

Compound semiconductor manufacturing device, compound semiconductor manufacturing method, and jig for manufacturing compound semiconductor

Provided is a method for manufacturing a semiconductor light emitting element, which has a step wherein a substrate composed of a material different from that of a semiconductor layer is used and a III compound semiconductor layer is formed on the substrate, and can reduce the emission wavelength distribution (&#x3b4;) of the obtained semiconductor light emitting layer. The method for manufacturing the semiconductor light emitting element having the III compound semiconductor layer is characterized in having: a compound semiconductor substrate forming step wherein at least one compound semiconductor layer is formed on the substrate and a compound semiconductor substrate having an amount of warpage (H) within the range of 50 &#x3bc;m&#x2266;H&#x2266;250 &#x3bc;m is formed; and a light emitting layer forming step wherein the light emitting layer composed of a plurality of III compound semiconductor layers is formed on the compound semiconductor substrate which has been formed.

Method for manufacturing semiconductor light emitting element, and semiconductor light emitting element

A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and grow a Group III nitride semiconductor on a heated substrate and a second step of vapor-phase-growing a Group III nitride semiconductor crystal on the substrate using a Group III raw material and a nitrogen raw material.

Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer

An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Gallium nitride-based compound semiconductor multilayer structure and production method thereof

An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

N-type group III nitride semiconductor layered structure

An object of the present invention is to provide a Group III nitride semiconductor device exhibiting improved crystallinity and a good performance. The inventive Group III nitride semiconductor device comprises a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate, wherein a first layer which is in contact with the substrate is composed of silicon-doped AlxGa1-xN (0&#x2266;x&#x2266;1). Also, the inventive Group III nitride semiconductor device comprises a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate, wherein a first layer which is in contact with the substrate is composed of AlxGa1-xN (0&#x2266;x&#x2266;1), and the difference in height between a protrusion and a depression which are present at the interface between the first layer and a second layer provided thereon is 10 nm or more and is equal to, or less than, 99% the thickness of the first layer.

Group III nitride semiconductor device and light-emitting device using the same

An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining a satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, an active layer, and a p-type layer formed on the substrate, the active layer being sandwiched by the n-type layer and the p-type layer, and the active layer comprising a thick portion and a thin portion, wherein the active layer has a flat lower surface (on the substrate side) and an uneven upper surface so as to form the thick portion and the thin portion.

A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.

METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD OF FABRICATING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LIGHT SOURCE USING THE SEMICONDUCTOR LIGHT-EMITTING DEVICE

Growing community of inventors

Ichihara, Japan

Tetsuo Sakurai