Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Teraoka Seiko Co., Ltd.

Tetsuo Ono

Michikazu Morimoto

Motohiko Yoshigai

Seiichi Murayama

Tatsumi Mizutani

Tatehito Usui

Tokuo Kure

Masayuki Kojima

Takafumi Tokunaga

Yasuo Ohgoshi

Keizo Suzuki

Hiromitsu Matsuno

Yasushi Goto

Takashi Sato

Yuuzou Oohirabaru

Yoshiharu Inoue

Masakazu Miyaji

Yoshio Watanabe

Naoshi Itabashi

Mamoru Yakushiji

Masaki Fujii

Hideyuki Kazumi

Ken Yoshioka

Masaru Izawa

Hideyuki Yamamoto

Kazue Takahashi

Tomoyuki Watanabe

Shigeo Mikoshiba

Naoyuki Kofuji

Yasuo Kato

Susumu Hiraoka

Katsumi Setoguchi

Nobuyuki Mise

Kazuhiro Jyouo

Yasuhiro Nishimori

Masahito Mori

Shinichi Tachi

Ryoji Nishio

Naoki Yasui

Kazunori Tsujimoto

Tsutomu Tetsuka

Kazuyuki Ikenaga

Ken'etsu Yokogawa

Tadashi Umezawa

Satoru Muto

Ryouji Hamasaki

Hirofumi Eitoku

Masayuki Shiina

Hiroshi Masuda

Kenji Sekine

Junya Tanaka

Kunio Harada

Tetsunori Kaji

Kazuo Nojiri

Saburo Kanai

Tadamitsu Kanekiyo

Kazuyuki Tsunokuni

Masato Ikegawa

Satoshi Ito

Shinichi Nakatsuka

Kazutami Tago

Kazuharu Teraoka

Katsuhiko Mitani

Mitsuhiro Mori

Junji Shigeta

Go Saito

Tetsu Morooka

Yasusuke Seki

Tsuyoshi Matsumoto

Hidekazu Okuhira

Churyo Kodama

Sakae Saito

Ryoji Hamasaki

Takuma Tanimoto

Shigeo Kubota

Atsuo Koyama

Ze Shen

Tsuyoshi Kobayashi

Hisao Yasunami

Mituhiro Tachibana

Ryouichi Katata

Hiromistu Mastuno

The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.

Plasma processing apparatus and plasma processing method

A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

Plasma processing apparatus

A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NFgas.

Dry etching method

The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.

Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.

A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

Method and apparatus for plasma processing

Controllability of ion bombardment on a substrate is further improved to achieve uniformity of the etched substrate across the substrate surface. A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.

Plasma processing method and plasma processing device

Plasma processing method

A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.

Plasma etching method

Growing community of inventors

Iruma, Japan

Tetsuo Ono