Merck Patent Gmbh

Az Electronic Materials (luxembourg) S.a.r.l.

Az Electronic Materials USA Corp.

Samsung Electronics Co., Ltd.

Az Electronic Material (luxembourg) S.ár.l.

Tetsuo Okayasu

Georg Pawlowski

Xiaowei Wang

Masato Suzuki

Yusuke Takano

Yusuke Hama

Toshiya Okamura

Thorsten Vom Stein

Hyun-woo Kim

Takashi Sekito

Takafumi Kinuta

Yasushi Akiyama

Masahiro Ishii

Kiyohisa Takahashi

Cheol Hong Park

Sung-Eun Hong

Sung Eun Hong

Katsuchika Suzuki

Takeshi Nishibe

[Problem] To provide a polycarbosilazane making it possible to form a silicon-containing film which is bearable to acid etching, and a composition comprising the polycarbosilazane. [Means for Solution] The present invention provides a polycarbosilazane comprising a repeating unit of —[RRSi—(CH)]— and —(RRSi—NR)—, wherein R, R, Rand Rare each independently a single bond, hydrogen or Calkyl; Ris independently a single bond or hydrogen; and n is 1-2, and a composition comprising the polycarbosilazane. The present invention also provides a method for forming a silicon-containing film, comprising coating the composition above a substrate and heating.

Polycarbosilazane, and composition comprising the same, and method for producing silicon-containing film using the same

To provide a new silicon-containing polymer making it possible to form a cured film has features that its residual stress is small and crack resistance is high. A polycarbosilazane having particular cyclic structures.

[Object] To provide compositions for forming a top coat layer capable of forming patterns with an excellent roughness and pattern shape in a pattern formation method by exposure to extreme ultraviolet rays, and a pattern formation method using the composition. [Means for solving problem] Provided are compositions for forming a top coat layer comprises an aromatic compound having an aromatic hydroxyl group and an aqueous solvent; and a method of forming patterns by applying the composition onto the resist surface and subjecting the resultant to exposure and development. This composition can further comprise binders.

Top-layer membrane formation composition and method for forming resist pattern using same

The objective of this invention is to provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape; and also to provide a pattern formation method employing that composition is described. The means for solving this objective is a composition for forming a topcoat layer, comprising a solvent and a fullerene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development.

Composition for forming overlay film, and resist pattern formation method employing the same

Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.

Composition for forming topcoat layer and resist pattern formation method employing the same

To provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape, and also to provide a pattern formation method employing that. A composition for forming a topcoat layer, containing a solvent and a triphenylene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development. The composition may further contain a polymer.

[Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.

Composition for forming fine resist pattern and pattern forming method using same

The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a Cto Calkanolamine salt of Cto Cperfluoroalkylcarboxylic acid, Cto Cperfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 &#x212b; to 600 &#x212b;, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

Process for preventing development defect and composition for use in the same

In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

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Kakegawa, Japan

Tetsuo Okayasu