Sony Corporation

Tetsuo Nomoto

Keiji Mabuchi

Tsutomu Haruta

Eiji Makino

Shinjiro Kameda

A MOS type solid state imaging device in which unit pixels, each having a photodiode, a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node are arrayed in a matrix. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example &#x2212;1V).

Solid state imaging device and camera system

An MOS type solid state imaging device in which unit pixelseach having a photodiode, a transfer transistorfor transferring the signal of the photodiodeto a floating node N, an amplifier transistorfor outputting the signal of the floating node Nto a vertical signal line, and a reset transistorfor resetting the floating node Nare arrayed in a matrix and in which a gate voltage of the reset transistoris controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example &#x2212;1V).

A MOS type solid state imaging device having unit pixels, each having a photodiode a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example &#x2212;1V).

A solid state imaging device able to make noise from a nonselected row small, able to suppress occurrence of vertical stripes in a bright scene, not requiring charging including a floating node capacity via a reset transistor, able to prevent an increase of a driver size of a drain line, and able to secure high speed operation and a camera system using this as the imaging device are provided. An MOS type solid state imaging device in which unit pixelseach having a photodiode, a transfer transistorfor transferring the signal of the photodiodeto a floating node N, an amplifier transistorfor outputting the signal of the floating node Nto a vertical signal line, and a reset transistorfor resetting the floating node Nare arrayed in a matrix and in which a gate voltage of the reset transistoris controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example &#x2212;1V).

Growing community of inventors

Kanagawa, Japan

Tetsuo Nomoto